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arXiv:2310.03726

Comparative study of light storage in antirelaxation-coated and buffer-gas-filled alkali vapor cells

Marin Ðujić, Danijel Buhin, Neven Šantić, Damir Aumiler, Ticijana Ban

Published Oct 5, 2023• 0 citations
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Abstract

We perform a comparative study of light storage in antirelaxation-coated and buffer-gas-filled alkali-vapor cells using electromagnetically induced transparency (EIT) in warm rubidium vapor. The use of a buffer-gas-filled cell resulted in $\approx$10-fold improvement in storage time and efficiency compared to antirelaxation coated cells. Our findings contribute to the development of future field-deployable high-performance quantum memories.

DOI
10.48550/arxiv.2310.03726

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We perform a comparative study of light storage in antirelaxation-coated and buffer-gas-filled alkali-vapor cells using electromagnetically induced transparency (EIT) in warm rubidium vapor. The use of a buffer-gas-filled cell resulted in ≈\approx≈10-fold improvement in storage time and efficiency compared to antirelaxation coated cells. Our findings contribute to the development of future field-deployable high-performance quantum memories.
Abstract We explore light storage in antirelaxation-coated and buffer-gas-filled alkali vapor cells, employing electromagnetically induced transparency (EIT) in warm rubidium vapor. We conduct a comparative study of light storage performance under identical experimental conditions for these two cell types. Using a buffer-gas-filled cell resulted in approximately a tenfold improvement in memory efficiency and storage time compared to antirelaxation-coated cells. Moreover, we demonstrate that memory efficiency can be further enhanced by choosing a near-resonant EIT Λ\LambdaΛ Λ -scheme over a resonant one. Our findings provide valuable insights for optimizing light storage, thereby contributing to the development of field-deployable quantum memories.
Alkali vapor cells with antirelaxation coated walls can have long atomic coherence times. However, using such coated cells in the hyperfine configuration for electromagnetically induced transparency (EIT) requires longitudinal atomic motion to be confined to less than the hyperfine wavelength. We employed a narrow (1 mm) coated cell geometry to study hyperfine EIT and slow and stored light in warm R87b vapor, with results comparable to those in buffer gas cells and showing the promise of such cells for several applications.
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Electromagnetically induced transparency (EIT) is a promising approach for implementing quantum memory, a key component of quantum communication networks. However, its storage time is limited by decoherence, primarily due to atomic motion. Anti-relaxation coatings can mitigate decoherence by minimizing atom-wall interactions. In this study, we experimentally investigate EIT-based quantum memory in cesium vapor cells with different anti-relaxation coatings. We compare the EIT characteristics and storage behavior across different coatings to assess their suitability for quantum memory applications.
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