Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2310.01060 · Physical review. B./Physical review. B

Elementary building blocks for cluster Mott insulators

Vaishnavi Jayakumar, Ciarán Hickey

Published Jan 5, 2026• 0 citations
arXivHTMLPDF

Abstract

Mott insulators, in which strong Coulomb interactions fully localize electrons on single atomic sites, play host to an incredibly rich and exciting array of strongly correlated physics. One can naturally extend this concept to cluster Mott insulators, wherein electrons localize not on single atoms but across clusters of atoms, forming "molecules in solids". The resulting localized degrees of freedom incorporate the full spectrum of electronic degrees of freedom, spin, orbital, and charge. These serve as the building blocks for cluster Mott insulators, and understanding them is an important first step toward understanding the many-body physics that emerges in candidate cluster Mott insulators. Here, we focus on elementary building blocks, neglecting some of the complexity present in real materials which can often obfuscate the underlying principles at play. Through an extensive set of exact theoretical calculations on clusters of varying geometry, number of orbitals, and number of electrons, we uncover some of the basic organizing principles of cluster Mott phases, particularly when interactions dominate and negate a simple single-particle picture. These include, for example, the identification of an additional "cluster Hund's rule", of cluster ground states that are best understood from a purely interacting perspective, and of several localized degrees of freedom which are protected by an unusual combination of discrete spatial or orbital symmetries. Finally, we discuss the impact of adding additional terms, relevant to material candidates, on the phase diagrams presented throughout, as well as the potential next steps in the journey to building a more complete picture of cluster Mott insulators.

DOI
10.1103/tssj-lg5b

Related papers

Visualizing the Mott transition

Rajarshi Tiwari

Correlated electronic systems involve strong shortrange repulsion. At integer filling, the primary effect of correlation is the emergence of an insulating state where band theory predicts a metal. Understanding the transition from a metal to this ‘Mott insulator’, as interaction strength is increased, and the effect of doping the Mott state, are classic problems in quantum many-body physics. They have been explored for decades, starting with the approximate solutions of Hubbard. The real breakthrough came in the 1990s with the advent of dynamical mean field theory, which mapped the correlated system to an embedded single site, and described the detailed spectral evolution across the Mott transition. The only deficiency in this approach is the neglect of spatial correlations, and, possibly, the lack of some ‘visual intuition’ about the transition. We discuss a complementary approach, which provides a reasonable description of Mott physics in a real-space setting and allows a certain degree of visualization. This article provides a pedagogical review of our approach and presents some illustrative results.

•Jan 1, 2012•0 citations

Strongly correlated electrons on the decorated honeycomb lattice studied with rotationally invariant slave-boson mean-field theory

H. L. Nourse

The single-orbital Hubbard model is often a good description of the low energy dynamics of strongly correlated electron systems. Importantly, the single-orbital Hubbard model at half-filling is able to capture the Mott metal-insulator transition that occurs in many materials. However, there are insulating phases (as well as other exotic phases) that occur due to strong electronic correlations in materials that are away from half-filling. In many cases, these additional phases occur because the constituent electrons of the material come from multi-orbital atomic environments that require more complicated descriptions such as the multi-orbital Hubbard model. In other cases, as we show in this thesis, the rich phase diagram arises from the underlying lattice because of special geometric features.For example, decorated lattices, which often occur in organometallics (e.g., metal-organic frameworks (MOFs)), have geometrical complexity due to the molecular structures that decorate the lattice. We argue that the effective description for many of these materials is the single-orbital Hubbard model. Yet, these materials still have rich phase diagrams because the molecular structures of the material cause effective multi-orbital interactions generated from the local Coulomb interaction.We investigate the single-orbital Hubbard model on the decorated honeycomb lattice at zero temperature using rotationally invariant slave-boson (RISB) theory in the mean-field approximation, at a range of fillings. Numerous metal-insulator transitions occur - the insulating phases include a real-space Mott insulator, a dimer Mott insulator, a trimer Mott insulator, flat-band ferromagnets, and a spin-1 Mott insulator, dominated by spin-triplet fluctuations. This menagerie of phases is caused by effective multi-orbital interactions arising from the interplay of electronic correlations, lattice structure, and band filling effects. For example, with only on-site Coulomb interactions, the spin-1 Mott insulator is driven by an effective Hund's coupling on a three-site ring that favors the formation of triplets when the three-site ring has four electrons. We argue that this exotic phase may be realized in layers of the organometallic molecular crystal Mo3S7(dmit)3.

•Feb 14, 2020•0 citations

Discovery of a Single-Band Mott Insulator in a van der Waals Flat-Band Compound

Shunye Gao, Shuai Zhang, Cuixiang Wang +31 more

The fundamental model for understanding Mott insulators is the single-band Hubbard model. An ideal realization of that model arises in Nb${}_{3}$Cl${}_{8}$, proving a powerful system for exploring Mott physics and other correlated states.

arXiv:2205.11462•Physical Review X•Dec 13, 2023•66 citations

Massively parallel exact diagonalization of strongly correlated systems

Andreas Dolfen

The physics of strongly correlated materials poses one of the most challenging problems in condensed-matter sciences. Standard approximations applicable to wide classes of materials such as the local density approximation fail, due to the importance of the Coulomb repulsion between localized electrons. Instead, we resort to non-perturbative many-body methods. The calculations are, however, only feasible for rather small model systems. The full Hamiltonian of a real material is approximated by a model Hamiltonian comprising only the most important electronic degrees of freedom, while the effect of all other electrons is included in an average way by renormalizing the parameters. Realistic calculations of strongly correlated materials need to include sufficiently many of these electronic degrees of freedom. The new generation of massively parallel supercomputers allows for these realistic calculations. However, exploiting their computational power requires newly devised algorithms. As a solver we use the Lanczos method, which needs the full many-body state of the correlated system. It is thus limited by the available main memory. The foremost problem for a distributed-memory implementation is that the multiplication of the Hamiltonian to the many-body state leads to highly non-local memory access patterns. A simple yet important observation leads to an efficient solution: in the kinetic term of the Hamiltonian the electron-spin is conserved. Thus, writing the many-body vector as a matrix v(iup,idn), where the indices label spin-configurations, we find that the hopping term only connects vector elements that differ in one index. Hence, storing entire slices v(iup,:) on one node, the kinetic term for the spin-down electrons is local to that process. After transposing v, the same is true for the hopping of the spin-up electrons. With an efficient matrix transpose, implemented via MPI collectives, we thus obtain a version of the Lanczos method that efficiently well on JUBL, Jülich's Blue Gene/L. Using the code we treated two-orbital Hubbard Models which show interesting Mott-band insulator transitions. Kohn's criterium which determines the phase of a system by ground-state properties alone, namely the response of the ground-state energies to a vector potential, was employed. This vector potential can be equivalently regarded as a change in boundary conditions, requiring complex wave vectors. We found that half-filled systems become metallic in the region between a band and Mott insulating phase. To extrapolate to infinite system sizes and therefore getting access to an arbitrarily high resolution in reciprocal space, we use cluster perturbation theory (CPT). It works by diagonalizing a finite cluster exactly and then treating the hopping between identical clusters perturbatively in strong coupling perturbation theory. This leads to an effectively infinite chain. Due to our efficient Lanczos implementation it is possible to calculate relatively large clusters, minimizing finite-size effects. The combination of our Lanczos code and CPT allowed for a treatment of the the organic metal TTF-TCNQ. We were able to solve a long-standing problem in the interpretation of its experimental spectra. Being an interesting one-dimensional metal TTF-TCNQ has been studied thoroughly for more than 30 years. Theoretical estimates as well as experimental measurements suggest values for the parameters of the Hubbard model t and U. With these values Hubbard model calculations show qualitatively the same features as APRES experiments, namely the signatures of spin-charge separation at the Gamma-point. But in order to fit the experimental data to the numerical calculations t has to be doubled, which translates into a broadening of the spectra. This ad-hoc adjustment is not only unsatisfactory but also the temperature dependence of the spectral function is incorrectly reproduced. We resolved this problem by properly including nearest-neighbor Coulomb interactions. Recent DFT calculations show that indeed the commonly used values of t and U are correct. But Coulomb interactions between electrons on neighboring sites are also significant and must not be neglected. Thus, we studied the effect of the next-neighbor interaction parameter V being at about U/2. Including V in our Lanczos calculations for obtaining the angular-integrated spectral function shows that its effect is to broaden the spectra, comparable to increasing the value of t. Moreover, we found that doubling t indeed mimics the effect of Vapprox U/2. Surprisingly, the broadening of the spectrum as a result of V can be understood in first-order Rayleigh-Schrödinger perturbation theory.

•Jan 1, 2011•3 citations

Momentum-Space Atom Correlations in a Mott Insulator

Cécile Carcy, Hugo Cayla, Antoine Ténart +3 more

Observations provide the full 3D distribution of momentums of helium atoms in a Mott insulator, an insulating phase of strongly interacting quantum matter, and lead to several new insights into the behavior of this exotic phase.

arXiv:1904.10995•Physical Review X•Nov 7, 2019•27 citations

Correlated Electrons in Quantum Matter

Peter Fulde

An understanding of the effects of electronic correlations in quantum systems is one of the most challenging problems in physics, partly due to the relevance in modern high technology. Yet there exist hardly any books on the subject which try to give a comprehensive overview on the field covering insulators, semiconductors, as well as metals. The present book tries to fill that gap. It intends to provide graduate students and researchers a comprehensive survey of electron correlations, weak and strong, in insulators, semiconductors and metals. This topic is a central one in condensed matter and beyond that in theoretical physics. The reader will have a better understanding of the great progress which has been made in the field over the past few decades.

WORLD SCIENTIFIC eBooks•Mar 28, 2012•69 citations
Mott insulators, in which strong Coulomb interactions fully localize electrons on single atomic sites, play host to an incredibly rich and exciting array of strongly correlated physics. One can naturally extend this concept to cluster Mott insulators, wherein electrons localize not on single atoms but across clusters of atoms, forming "molecules in solids". The resulting localized degrees of freedom incorporate the full spectrum of electronic degrees of freedom, spin, orbital, and charge. These serve as the building blocks for cluster Mott insulators, and understanding them is an important first step toward understanding the many-body physics that emerges in candidate cluster Mott insulators. Here, we focus on elementary building blocks, neglecting some of the complexity present in real materials which can often obfuscate the underlying principles at play. Through an extensive set of exact theoretical calculations on clusters of varying geometry, number of orbitals, and number of electrons, we uncover some of the basic organizing principles of cluster Mott phases, particularly when interactions dominate and negate a simple single-particle picture. These include, for example, the identification of an additional "cluster Hund's rule", of cluster ground states that are best understood from a purely interacting perspective, and of several localized degrees of freedom which are protected by an unusual combination of discrete spatial or orbital symmetries. Finally, we discuss the impact of adding additional terms, relevant to material candidates, on the phase diagrams presented throughout, as well as the potential next steps in the journey to building a more complete picture of cluster Mott insulators.
Correlated electronic systems involve strong shortrange repulsion. At integer filling, the primary effect of correlation is the emergence of an insulating state where band theory predicts a metal. Understanding the transition from a metal to this ‘Mott insulator’, as interaction strength is increased, and the effect of doping the Mott state, are classic problems in quantum many-body physics. They have been explored for decades, starting with the approximate solutions of Hubbard. The real breakthrough came in the 1990s with the advent of dynamical mean field theory, which mapped the correlated system to an embedded single site, and described the detailed spectral evolution across the Mott transition. The only deficiency in this approach is the neglect of spatial correlations, and, possibly, the lack of some ‘visual intuition’ about the transition. We discuss a complementary approach, which provides a reasonable description of Mott physics in a real-space setting and allows a certain degree of visualization. This article provides a pedagogical review of our approach and presents some illustrative results.
The single-orbital Hubbard model is often a good description of the low energy dynamics of strongly correlated electron systems. Importantly, the single-orbital Hubbard model at half-filling is able to capture the Mott metal-insulator transition that occurs in many materials. However, there are insulating phases (as well as other exotic phases) that occur due to strong electronic correlations in materials that are away from half-filling. In many cases, these additional phases occur because the constituent electrons of the material come from multi-orbital atomic environments that require more complicated descriptions such as the multi-orbital Hubbard model. In other cases, as we show in this thesis, the rich phase diagram arises from the underlying lattice because of special geometric features.For example, decorated lattices, which often occur in organometallics (e.g., metal-organic frameworks (MOFs)), have geometrical complexity due to the molecular structures that decorate the lattice. We argue that the effective description for many of these materials is the single-orbital Hubbard model. Yet, these materials still have rich phase diagrams because the molecular structures of the material cause effective multi-orbital interactions generated from the local Coulomb interaction.We investigate the single-orbital Hubbard model on the decorated honeycomb lattice at zero temperature using rotationally invariant slave-boson (RISB) theory in the mean-field approximation, at a range of fillings. Numerous metal-insulator transitions occur - the insulating phases include a real-space Mott insulator, a dimer Mott insulator, a trimer Mott insulator, flat-band ferromagnets, and a spin-1 Mott insulator, dominated by spin-triplet fluctuations. This menagerie of phases is caused by effective multi-orbital interactions arising from the interplay of electronic correlations, lattice structure, and band filling effects. For example, with only on-site Coulomb interactions, the spin-1 Mott insulator is driven by an effective Hund's coupling on a three-site ring that favors the formation of triplets when the three-site ring has four electrons. We argue that this exotic phase may be realized in layers of the organometallic molecular crystal Mo3S7(dmit)3.
The fundamental model for understanding Mott insulators is the single-band Hubbard model. An ideal realization of that model arises in Nb3{}_{3}3​Cl8{}_{8}8​, proving a powerful system for exploring Mott physics and other correlated states.
The physics of strongly correlated materials poses one of the most challenging problems in condensed-matter sciences. Standard approximations applicable to wide classes of materials such as the local density approximation fail, due to the importance of the Coulomb repulsion between localized electrons. Instead, we resort to non-perturbative many-body methods. The calculations are, however, only feasible for rather small model systems. The full Hamiltonian of a real material is approximated by a model Hamiltonian comprising only the most important electronic degrees of freedom, while the effect of all other electrons is included in an average way by renormalizing the parameters. Realistic calculations of strongly correlated materials need to include sufficiently many of these electronic degrees of freedom. The new generation of massively parallel supercomputers allows for these realistic calculations. However, exploiting their computational power requires newly devised algorithms. As a solver we use the Lanczos method, which needs the full many-body state of the correlated system. It is thus limited by the available main memory. The foremost problem for a distributed-memory implementation is that the multiplication of the Hamiltonian to the many-body state leads to highly non-local memory access patterns. A simple yet important observation leads to an efficient solution: in the kinetic term of the Hamiltonian the electron-spin is conserved. Thus, writing the many-body vector as a matrix v(iup,idn), where the indices label spin-configurations, we find that the hopping term only connects vector elements that differ in one index. Hence, storing entire slices v(iup,:) on one node, the kinetic term for the spin-down electrons is local to that process. After transposing v, the same is true for the hopping of the spin-up electrons. With an efficient matrix transpose, implemented via MPI collectives, we thus obtain a version of the Lanczos method that efficiently well on JUBL, Jülich's Blue Gene/L. Using the code we treated two-orbital Hubbard Models which show interesting Mott-band insulator transitions. Kohn's criterium which determines the phase of a system by ground-state properties alone, namely the response of the ground-state energies to a vector potential, was employed. This vector potential can be equivalently regarded as a change in boundary conditions, requiring complex wave vectors. We found that half-filled systems become metallic in the region between a band and Mott insulating phase. To extrapolate to infinite system sizes and therefore getting access to an arbitrarily high resolution in reciprocal space, we use cluster perturbation theory (CPT). It works by diagonalizing a finite cluster exactly and then treating the hopping between identical clusters perturbatively in strong coupling perturbation theory. This leads to an effectively infinite chain. Due to our efficient Lanczos implementation it is possible to calculate relatively large clusters, minimizing finite-size effects. The combination of our Lanczos code and CPT allowed for a treatment of the the organic metal TTF-TCNQ. We were able to solve a long-standing problem in the interpretation of its experimental spectra. Being an interesting one-dimensional metal TTF-TCNQ has been studied thoroughly for more than 30 years. Theoretical estimates as well as experimental measurements suggest values for the parameters of the Hubbard model t and U. With these values Hubbard model calculations show qualitatively the same features as APRES experiments, namely the signatures of spin-charge separation at the Gamma-point. But in order to fit the experimental data to the numerical calculations t has to be doubled, which translates into a broadening of the spectra. This ad-hoc adjustment is not only unsatisfactory but also the temperature dependence of the spectral function is incorrectly reproduced. We resolved this problem by properly including nearest-neighbor Coulomb interactions. Recent DFT calculations show that indeed the commonly used values of t and U are correct. But Coulomb interactions between electrons on neighboring sites are also significant and must not be neglected. Thus, we studied the effect of the next-neighbor interaction parameter V being at about U/2. Including V in our Lanczos calculations for obtaining the angular-integrated spectral function shows that its effect is to broaden the spectra, comparable to increasing the value of t. Moreover, we found that doubling t indeed mimics the effect of Vapprox U/2. Surprisingly, the broadening of the spectrum as a result of V can be understood in first-order Rayleigh-Schrödinger perturbation theory.
An understanding of the effects of electronic correlations in quantum systems is one of the most challenging problems in physics, partly due to the relevance in modern high technology. Yet there exist hardly any books on the subject which try to give a comprehensive overview on the field covering insulators, semiconductors, as well as metals. The present book tries to fill that gap. It intends to provide graduate students and researchers a comprehensive survey of electron correlations, weak and strong, in insulators, semiconductors and metals. This topic is a central one in condensed matter and beyond that in theoretical physics. The reader will have a better understanding of the great progress which has been made in the field over the past few decades.