Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits
William M. Strickland, Lukas Baker, Jaewoo Lee, Krishna Dindial, Bassel Heiba Elfeky, Patrick James Strohbeen, Mehdi Hatefipour, Peng Yu, Ido Levy, Jacob Issokson, Vladimir Manucharyan, Javad Shabani
The tunneling of Cooper pairs across a Josephson junction (JJ) allows for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quantum circuits. An alternative approach using hybrid superconductor-semiconductor JJs can enable superconducting qubit architectures with all electric control. Here we present continuous-wave and time-domain characterization of gatemon qubits and coplanar waveguide resonators based on an InAs two-dimensional electron gas. We show that the qubit undergoes a vacuum Rabi splitting with a readout cavity, and we drive coherent Rabi oscillations between the qubit ground and first excited states. We measure qubit relaxation times to be T 1 = 100 ns over a 1.5 GHz tunable band. We detail the loss mechanisms present in these materials through a systematic study of the quality factors of coplanar waveguide resonators. While various loss mechanisms are present in III-V gatemon circuits, we detail future directions in enhancing the relaxation times of qubit devices on this platform. Published by the American Physical Society 2024
The tunneling of Cooper pairs across a Josephson junction (JJ) allows for the nonlinear inductance necessary to construct superconducting qubits, amplifiers, and various other quantum circuits. An alternative approach using hybrid superconductor-semiconductor JJs can enable superconducting qubit architectures with all electric control. Here we present continuous-wave and time-domain characterization of gatemon qubits and coplanar waveguide resonators based on an InAs two-dimensional electron gas. We show that the qubit undergoes a vacuum Rabi splitting with a readout cavity, and we drive coherent Rabi oscillations between the qubit ground and first excited states. We measure qubit relaxation times to be T 1 = 100 ns over a 1.5 GHz tunable band. We detail the loss mechanisms present in these materials through a systematic study of the quality factors of coplanar waveguide resonators. While various loss mechanisms are present in III-V gatemon circuits, we detail future directions in enhancing the relaxation times of qubit devices on this platform. Published by the American Physical Society 2024
Superconducting transmon qubits based on hybrid superconductor-semiconductor Josephson junctions (gatemons) offer gate tunability, but their relaxation times remain well below those of state-of-the-art transmons, and the origin of this discrepancy is not fully understood. Here, we co-fabricate gatemons and SIS-junction transmons with nominally identical circuit layouts, gate dielectrics, and control lines, so that the Josephson element is the only intentional distinction. Across multiple chips, transmons in this architecture reach relaxation times in the tens of microseconds, whereas gatemons saturate in the few-microsecond range. Using the transmons as on-chip references, we construct a loss budget including Purcell decay, spontaneous emission through the control line, and internal dielectric loss, and find that the corresponding T1 limits exceed all measured gatemon values by more than an order of magnitude. Temperature-dependent T1 measurements follow a common quasiparticle-activation model and yield similar superconducting gaps for S-Sm-S and SIS junctions, indicating that the reduced gatemon coherence is dominated by additional temperature-independent, junction-intrinsic dissipation.
Gate-tunable transmons (gatemons) employing semiconductor Josephson junctions have recently emerged as building blocks for hybrid quantum circuits. In this study, we present a gatemon fabricated in planar Germanium. We induce superconductivity in a two-dimensional hole gas by evaporating aluminum atop a thin spacer, which separates the superconductor from the Ge quantum well. The Josephson junction is then integrated into an Xmon circuit and capacitively coupled to a transmission line resonator. We showcase the qubit tunability in a broad frequency range with resonator and two-tone spectroscopy. Time-domain characterizations reveal energy relaxation and coherence times up to 75 ns. Our results, combined with the recent advances in the spin qubit field, pave the way towards novel hybrid and protected qubits in a group IV, CMOS-compatible material.
Superconducting coplanar waveguide (SCPW) resonators, key components for quantum computing and sensing applications, require a high internal quality factor ( Q i ) for effective qubit readout and quantum sensing applications. Minimizing two-level system (TLS) losses, particularly at material interfaces, is critical for gatemon and topological qubits operating at low temperatures and in high magnetic fields. NbTi, a superconducting alloy with a high upper critical field, enables SCPW resonators resilient to such conditions. We fabricated NbTi SCPW resonators on Si/SiO 2 substrates and systematically characterized their TLS-limited quality factors as functions of temperature and microwave photon number. Our results demonstrate that NbTi-based SCPWs on Si/SiO 2 substrates provide a promising platform for developing next-generation quantum circuits. • Successfully fabricated NbTi SCPW resonators on Si/SiO 2 substrates. • Characterized NbTi SCPW across temperature and photon ranges for quantum apps. • Achieved record TLS-limited quality factor Q TLS,0 = 9.21 × 10 4 for SCPW on Si/SiO 2 . • NbTi SCPW on Si/SiO 2 is promising for gatemon and topological qubits.
Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts. We perform Rabi oscillation and Ramsey interference measurements, demonstrate the gate-voltage dependence of the qubit frequency, and measure the qubit anharmonicity. We find relaxation times T 1 up to 119 ns, and Ramsey coherence times T 2 * up to 70 ns, and a qubit frequency gate-tunable over 3.5 GHz. The reported proof-of-concept reproduces the results of a very recent work [Sagi et al. Nat. Commun. 2024, 15, 6400] using similar Ge/SiGe heterostructures, thereby validating a novel platform for the development of gatemons and parity-protected cos(2ϕ) qubits.
Two-level system (TLS) loss typically limits the coherence of superconducting quantum circuits. The loss induced by TLS defects is nonlinear, resulting in quality factors with a strong dependence on the circulating microwave power. We observe frequency mixing due to this nonlinearity by applying a two-tone drive to a coplanar waveguide resonator and measuring the intermodulation products using a multifrequency lock-in technique. This intermodulation spectroscopy method provides an efficient approach to characterizing TLS loss in superconducting circuits. Using harmonic balance reconstruction, we recover the nonlinear parameters of the device-TLS interaction, which are in good agreement with the standard tunneling model for TLSs. Published by the American Physical Society 2024
The development of quantum circuits based on hybrid superconductor-semiconductor Josephson junctions holds promise for exploring their mesoscopic physics and for building innovative superconducting devices. The gate-tunable superconducting transmon qubit (gatemon) is the paradigmatic example of such a superconducting circuit; however, gatemons typically suffer from unstable and hysteretic qubit frequencies with respect to the applied gate voltage and reduced coherence times compared to conventional transmons fabricated from aluminum-oxide-based Josephson junctions. Here, we develop methods for characterizing these challenges in gatemons and deploy these methods to compare the impact of shunt-capacitor designs on gatemon performance. Our results indicate a strong frequency- and design-dependent behavior of the qubit stability, hysteresis, and dephasing times. Moreover, we achieve highly reliable tuning of the qubit frequency with 1-MHz precision over a range of several gigahertz, along with improved stability in grounded gatemons compared to gatemons with a floating capacitor design.