Abstract Photon Bose–Einstein condensation and photon thermalisation have been largely studied with molecular gain media in optical cavities. However, their observation with semiconductors has remained elusive despite a large body of experimental results and very well established theoretical models. In this work, these models are used to build a new theoretical framework that enables revisiting lasing to compare with photon Bose–Einstein condensation in the driven‐dissipative regime. The thermalisation figures of merit and the different experimental procedures to asses thermalization are discussed. Finally, the fluctuations of the system and their relation to the different regimes are explored.
Abstract Photon Bose–Einstein condensation and photon thermalisation have been largely studied with molecular gain media in optical cavities. However, their observation with semiconductors has remained elusive despite a large body of experimental results and very well established theoretical models. In this work, these models are used to build a new theoretical framework that enables revisiting lasing to compare with photon Bose–Einstein condensation in the driven‐dissipative regime. The thermalisation figures of merit and the different experimental procedures to asses thermalization are discussed. Finally, the fluctuations of the system and their relation to the different regimes are explored.
Abstract Many bosons can occupy a single quantum state without a limit. It is described by the quantum-mechanical Bose–Einstein statistic, which allows Bose–Einstein condensation at low temperatures and high particle densities. Photons, historically the first considered bosonic gas, were late to show this phenomenon, observed in rhodamine-filled microcavities and doped fibre cavities. These findings have raised the question of whether condensation is also common in other laser systems with potential technological applications. Here we show the Bose–Einstein condensation of photons in a broad-area vertical-cavity surface-emitting laser with a slight cavity-gain spectral detuning. We observed a Bose–Einstein condensate in the fundamental transversal optical mode at a critical phase-space density. The experimental results follow the equation of state for a two-dimensional gas of bosons in thermal equilibrium, although the extracted spectral temperatures were lower than the device’s. This is interpreted as originating from the driven-dissipative nature of the photon gas. In contrast, non-equilibrium lasing action is observed in the higher-order modes in more negatively detuned device. Our work opens the way for the potential exploration of superfluid physics of interacting photons mediated by semiconductor optical nonlinearities. It also shows great promise for enabling single-mode high-power emission from a large-aperture device.
Abstract Photon condensation in semiconductor microcavities is a transformative technique for engineering quantum states of light at room temperature by tailoring strong but incoherent light-matter interactions. While continuous-wave and electrical pumping offer exceptional prospects for miniaturized quantum photonic technologies, harnessing these requires conceptual advances in understanding non-equilibrium light-matter dynamics in semiconductors. We resolve this challenge through an ab initio quantum kinetic theory capturing how Coulomb interactions of optically excited carriers and phonon scattering mediate photon thermalization and condensation in semiconductors. Our microscopic model shows that at high carrier densities, thermalization is dominated by carrier–carrier Coulomb scattering, in clear contrast to the rovibrational relaxation that governs dye-based photon condensates. The theory predicts a rich nonequilibrium phase diagram with thermal, Bose-condensed, multimode, and lasing phases, quantitatively in agreement with recent experiments. Crucially, we identify how cavity detuning controls transitions between equilibrium and gain-dominated regimes, enabling tailored design of coherent light sources. This work thus provides the foundation for semiconductor-based quantum photonic devices operating beyond conventional laser paradigms.
Abstract Photon condensation was first experimentally realized in 2010 within a dye-filled microcavity at room temperature. Since then, interest in the field has increased significantly, as a photon Bose-Einstein condensate (BEC) represents a prototypical driven-dissipative system. Here, we investigate how its inherent open nature influences the condensation process both quantitatively and qualitatively. To this end, we consider a mean-field model, which can be derived microscopically from a Lindblad master equation. The underlying rate equations depend on various external parameters such as emission and absorption rates of the dye molecules as well as the cavity photon loss rate. In steady state, we obtain an open-dissipative Bose-Einstein distribution for the mode occupations. The chemical potential of this distribution depends on the occupations of the dye molecules in both their ground and excited state and must therefore be determined self-consistently. We find that the resulting photon distribution is strongly influenced by the driven-dissipative parameters. Based on this result, we identify the main differences between a photonic BEC, an atomic BEC, and a laser.
Photon condensation in semiconductor microcavities is a transformative technique for engineering quantum states of light at room temperature by tailoring strong but incoherent light-matter interactions. While continuous-wave and electrical pumping offer exceptional prospects for miniaturized quantum photonic technologies, harnessing these requires conceptual advances in understanding nonequilibrium light-matter dynamics in semiconductors. We resolve this challenge through an \textit{ab initio} quantum kinetic theory capturing how Coulomb interactions of optically excited carriers and phonon scattering mediate photon thermalization and condensation in semiconductors. Our microscopic model shows that at high carrier densities, thermalization is dominated by carrier-carrier Coulomb scattering, in clear contrast to the rovibrational relaxation that governs dye-based photon condensates. The theory predicts a rich nonequilibrium phase diagram with thermal, Bose-condensed, multimode, and lasing phases, quantitatively in agreement with recent experiments. Crucially, we identify how cavity detuning controls transitions between equilibrium and gain-dominated regimes, enabling tailored design of coherent light sources. This work thus provides the foundation for semiconductor-based quantum photonic devices operating beyond conventional laser paradigms.
Many bosons can occupy a single quantum state without a limit. This state is described by quantum-mechanical Bose-Einstein statistics, which allows the formation of a Bose-Einstein condensate at low temperatures and high particle densities. Photons, historically the first considered bosonic gas, were late to show this phenomenon, which was observed in rhodamine-filled microlaser cavities and doped fiber cavities. These more recent findings have raised the natural question as to whether condensation is common in laser systems, with potential technological applications. Here, we show the Bose-Einstein condensation of photons in a broad-area vertical-cavity surface-emitting laser with positive cavity mode-gain peak energy detuning. We observed a Bose-Einstein condensate in the fundamental transversal optical mode at the critical phase-space density. The experimental results follow the equation of state for a two-dimensional gas of bosons in thermal equilibrium, although the extracted spectral temperatures were lower than those of the device. This is interpreted as originating from the driven-dissipative nature of the device and the stimulated cooling effect. In contrast, non-equilibrium lasing action is observed in the higher-order modes in a negatively detuned device. Our work opens the way for the potential exploration of superfluid physics of interacting photons mediated by semiconductor optical non-linearities. It also shows great promise for enabling single-mode high-power emission from a large aperture device.
When particles with integer spin accumulate at low temperature and high density they undergo Bose-Einstein condensation (BEC). Atoms, solid-state excitons and excitons coupled to light all exhibit BEC, which results in high coherence due to massive occupation of the respective system's ground state. Surprisingly, photons were shown to exhibit BEC much more recently in organic dye-filled optical microcavities, which, owing to the photon's low mass, occurs at room temperature. Here we demonstrate that photons within an inorganic semiconductor microcavity also thermalise and undergo BEC. Although semiconductor lasers are understood to operate out of thermal equilibrium, we identify a region of good thermalisation in our system where we can clearly distinguish laser action from BEC. Based on well-developed technology, semiconductor microcavities are a robust system for exploring the physics and applications of quantum statistical photon condensates. Notably, photon BEC is an alternative to exciton-based BECs, which dissociate under high excitation and often require cryogenic operating conditions. In practical terms, photon BECs offer their critical behaviour at lower thresholds than lasers. Our study shows two further advantages of photon BEC in semiconductor materials: the lack of dark electronic states allows these BECs to be sustained continuously; and semiconductor quantum wells offer strong photon-photon scattering. We measure an unoptimised interaction parameter, g~=0.0023±0.0003, which is large enough to access the rich physics of interactions within BECs, such as superfluid light or vortex formation.