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arXiv:2301.10146

Time-dependent Mandel Q parameter analysis for a hexagonal boron nitride single photon source

Jones, Callum, Jolly Xavier, Samir Vartabi Kashanian, Nguyen, Minh, Igor Aharonovich, Frank Vollmer

Published Jan 24, 2023• 0 citations
arXivHTMLPDF

Abstract

The time-dependent Mandel Q parameter, Q(T), provides a measure of photon number variance for a light source as a function of integration time. Here, we use Q(T) to characterise single photon emission from a quantum emitter in hexagonal boron nitride (hBN). Under pulsed excitation a negative Q parameter was measured, indicating photon antibunching at an integration time of 100 ns. For larger integration times Q is positive and the photon statistics become super-Poissonian, and we show by comparison with a Monte Carlo simulation for a three-level emitter that this is consistent with the effect of a metastable shelving state. Looking towards technological applications for hBN single photon sources, we propose that Q(T) provides valuable information on the intensity stability of single photon emission. This is useful in addition to the commonly used $g^{(2)}(τ)$ function for the complete characterisation of a hBN emitter.

DOI
10.48550/arxiv.2301.10146

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The time-dependent Mandel Q parameter, Q(T), provides a measure of photon number variance for a light source as a function of integration time. Here, we use Q(T) to characterise single photon emission from a quantum emitter in hexagonal boron nitride (hBN). Under pulsed excitation a negative Q parameter was measured, indicating photon antibunching at an integration time of 100 ns. For larger integration times Q is positive and the photon statistics become super-Poissonian, and we show by comparison with a Monte Carlo simulation for a three-level emitter that this is consistent with the effect of a metastable shelving state. Looking towards technological applications for hBN single photon sources, we propose that Q(T) provides valuable information on the intensity stability of single photon emission. This is useful in addition to the commonly used g(2)(τ)g^{(2)}(τ)g(2)(τ) function for the complete characterisation of a hBN emitter.
The time-dependent Mandel Q parameter, Q ( T ), provides a measure of photon number variance for a light source as a function of integration time. Here, we use Q ( T ) to characterise single photon emission from a quantum emitter in hexagonal boron nitride (hBN). Under pulsed excitation a negative Q parameter was measured, indicating photon antibunching at an integration time of 100 ns. For larger integration times Q is positive and the photon statistics become super-Poissonian, and we show by comparison with a Monte Carlo simulation for a three-level emitter that this is consistent with the effect of a metastable shelving state. Looking towards technological applications for hBN single photon sources, we propose that Q ( T ) provides valuable information on the intensity stability of single photon emission. This is useful in addition to the commonly used g (2) ( τ ) function for the complete characterisation of a hBN emitter.
We report on the quantum photon statistics of hexagonal boron nitride (h-BN) quantum emitters by analyzing the Mandel Q parameter. We have measured the Mandel Q parameter for h-BN quantum emitters under various temperature and pump power excitation conditions. Under pulsed excitation, we can achieve a Mandel Q of −0.002, and under continuous-wave excitation, this parameter can reach −0.0025. We investigate the effect of cryogenic temperatures on Mandel Q and conclude that the photon statistics vary weakly with temperature. Through the calculation of spontaneous emission from an excited two-level emitter model, we demonstrate good agreement between the measured and calculated Mandel Q parameters when accounting for the experimental photon collection efficiency. Finally, we illustrate the usefulness of Mandel Q in quantum applications by the example of random number generation and analyze the effect of Mandel Q on the speed of generating random bits via this method.
Single photon sources based on single emitters such as 2D materials and impurities in diamond are of great interest for many application fields including quantum communication, quantum metrology and quantum sensing. In photometry and radiometry, a single photon source, having the ability to emit only one photon in a well-defined time and frequency domain, represents a promising candidate to realize a photon number-based primary standard for quantum radiometry. At the Korea Research Institute of Standards and Science (KRISS), we have realized three kinds of single photon sources based on various single emitters at room temperature: silicon vacancy in diamond, defects in gallium nitride (GaN), and vacancy in hexagonal boron nitride (hBN). We found common factors related with the relaxation times of the internal states that indirectly affect the photon number stability. We observed a high photon number stability in the GaN emitter due to faster relaxation times compared with the hBN emitter, which on the other hand produced high rates of photons per second (> 106). Moreover, we demonstrate repeatable radiant flux measurements of a bright hBN single photon emitter for a wide radiant flux range from a few tens of femtowatts to one picowatt.
Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines, particularly in the visible range, which can be difficult to distinguish from signals arising from organic or process-induced contamination during sample preparations and handling. This ambiguity limits both the reproducibility of emitter generation and the reliable identification of truly intrinsic quantum defects. This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation. We employ hyperspectral imaging, thermal annealing, and oxygen plasma etching to investigate the origin of the green-yellow emitters in electron-irradiated hBN. The combined results not only rule out organic contamination as the source of emission but also provide insight into the spectral variability, thermal stability, and vertical localization of the emitters generated in electron-irradiated hBN that was created without any pre- or post-processing. In addition, our experiments demonstrate the feasibility of creating stable emitters in hBN with thicknesses below 10 nm. These findings provide practical guidance for the identification and controlled implementation of hBN-based single-photon emitters in quantum photonic devices.
Quantum emitters in solid-state crystals have recently attracted a lot of attention due to their simple applicability in optical quantum technologies. The polarization of single photons generated by quantum emitters is one of the key parameters that play a crucial role in the applications, such as quantum computation that uses the indistinguishability of photons. However, the degree of single photon polarization is typically quantified using time-averaged photoluminescence intensity of single emitters, which provides limited information about the dipole properties in solids. In this work, we use single defects in hexagonal boron nitride and nanodiamond as efficient room-temperature single photon sources to reveal the origin and the temporal evolution of dipole orientation in solid-state quantum emitters. The angle of excitation and emission dipoles relative to the crystal axes are determined experimentally and then calculated using density functional theory, which results in characteristic angles for every specific defect that can be used as an efficient tool for defect identification and understanding their atomic structure. Moreover, the temporal polarization dynamics reveal a strongly modified linear polarization visibility that depends on the excited state decay time of individual excitation. This effect can be traced back potentially to the excitation of excess charges in the local crystal environment. Understanding such hidden time-dependent mechanisms can further be used to improve the performance of polarization-sensitive experiments, in particular that of quantum communication with single photon emitters.