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arXiv:2301.05091

Temperature Dependence of Photoluminescence Intensity and Spin Contrast in Nitrogen-Vacancy Centers

Stefan Ernst, Patrick Scheidegger, S. Diesch, Luca Lorenzelli, Christian L. Degen

Published Jan 12, 2023• 0 citations
arXivHTMLPDF

Abstract

We report on measurements of the photoluminescence properties of single nitrogen-vacancy centers in diamond at temperatures between 4 K and 300 K. We observe a strong reduction of the PL intensity and spin contrast between ca. 10 K and 100 K that recovers to high levels below and above. Further, we find a rich dependence on magnetic bias field and crystal strain. We develop a comprehensive model based on spin mixing and orbital hopping in the electronic excited state that quantitatively explains the observations. Beyond a more complete understanding of the excited-state dynamics, our work provides a novel approach for probing electron-phonon interactions and a predictive tool for optimizing experimental conditions for quantum applications.

DOI
10.3929/ethz-b-000630219

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We report on measurements of the photoluminescence properties of single nitrogen-vacancy centers in diamond at temperatures between 4 K and 300 K. We observe a strong reduction of the PL intensity and spin contrast between ca. 10 K and 100 K that recovers to high levels below and above. Further, we find a rich dependence on magnetic bias field and crystal strain. We develop a comprehensive model based on spin mixing and orbital hopping in the electronic excited state that quantitatively explains the observations. Beyond a more complete understanding of the excited-state dynamics, our work provides a novel approach for probing electron-phonon interactions and a predictive tool for optimizing experimental conditions for quantum applications.
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Nitrogen-vacancy (NV) centers in single-crystal CVD diamond are promising candidates for quantum sensing due to their remarkable optical and spin properties [1]. These defects exhibit stable photoluminescence (PL), long spin coherence times, and high sensitivity to external fields [2]. In this study, we present a room-temperature PL characterization of NV centers excited with a 532 nm laser. The setup was optimized for high signal-to-noise ratio and spectral resolution. Key parameters analyzed include emission intensity, zero-phonon line (ZPL) at ~637 nm, phonon sidebands, and the charge state distribution between NV⁰ and NV⁻. The NV⁻ state, crucial for spin-based sensing, is evaluated to understand its stability under different nitrogen doping conditions [3]. The relative intensities of NV⁰ and NV⁻ provide insights into nitrogen incorporation and vacancy formation. These results contribute to optimizing synthesis conditions for enhanced NV⁻ concentration, supporting the advancement of diamond-based quantum sensing technologies.
Abstract Transverse-magnetic-field-induced spin mixing in nitrogen-vacancy (NV) centers hybridizes the |0⟩ and | ± 1⟩ manifolds, degrading optical spin polarization and spin-dependent fluorescence and thereby limiting optically detected magnetic resonance (ODMR) contrast and quantum-sensor fidelity. While recent work has clarified key elements of NV photophysics, how spin mixing evolves with temperature under device-relevant operating conditions─and how it intertwines with charge-state dynamics─remains insufficiently quantified. Here we perform systematic magnetic-field-temperature (B-T) mapping of transverse-field-induced photoluminescence (PL) quenching in an ensemble of NV centers. By spectrally resolving the NV– and NV0 zero-phonon-line emission, we disentangle spin-mixing-driven contrast loss within NV– from correlated changes in charge-state-resolved fluorescence. We introduce an operational critical field Bc extracted from the PL-contrast line shape, which provides a compact, reproducible figure-of-merit for transverse-field robustness and enables straightforward comparison across temperatures and field geometries. The measured temperature dependence of Bc is captured by a concise model incorporating phonon-mediated excited-state orbital dynamics, establishing a predictive framework for optimizing operating conditions and benchmarking ensemble NV sensing platforms.
Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a function of temperature starting from ambient conditions up to about 100∘^\circ∘ Celsius, focusing on the zero-phonon line (ZPL). We find that the wavelength and width of the ZPL of the two color centers exhibit a comparable dependence on temperature, despite the strong difference in the photoluminescence spectra. Moreover, the temperature sensitivity of the ZPL of the silicon-vacancy center is not significantly affected by phosphorus-doping, as we infer by comparison with silicon-vacancy centers in electronic-grade single-crystal diamond.