Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors.
Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors.
Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile photonic qubits. Recently, silicon has emerged as a promising host material where artificial atoms with long spin coherence times and emission into the telecommunications band can be controllably fabricated. This field leverages the maturity of silicon photonics to embed artificial atoms into the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of these atoms, which can be addressed by coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms in silicon (G-centers) at telecommunication wavelengths. Our results show enhancement of their zero phonon line intensities along with highly pure single-photon emission, while their lifetime remains statistically unchanged. We suggest the possibility of two different existing types of G-centers, shedding new light on the properties of silicon emitters.
While integrated photonics is a robust platform for quantum information processing, architectures for photonic quantum computing place stringent demands on high quality information carriers. Sources of single photons that are highly indistinguishable and pure, that are either near-deterministic or heralded with high efficiency, and that are suitable for mass-manufacture, have been elusive. Here, we demonstrate on-chip photon sources that simultaneously meet each of these requirements. Our photon sources are fabricated in silicon using mature processes, and exploit a dual-mode pump-delayed excitation scheme to engineer the emission of spectrally pure photon pairs through inter-modal spontaneous four-wave mixing in low-loss spiralled multi-mode waveguides. We simultaneously measure a spectral purity of 0.9904 ± 0.0006, a mutual indistinguishability of 0.987 ± 0.002, and >90% intrinsic heralding efficiency. We measure on-chip quantum interference with a visibility of 0.96 ± 0.02 between heralded photons from different sources.
Single photons enable the distribution of quantum information over large distances and thus play a major role in quantum technologies such as communication and computing. Solid-state emitters are practical and efficient sources of single photons that can be manufactured in large numbers. When combined with a spin, the resulting spin-photon interfaces can store quantum states for extended periods and serve as the basis for quantum networks and repeaters. Among the many host materials explored over the past few decades, silicon stands out for its advanced nanofabrication, the maturity of its integrated photonics and microelectronics, and its high isotopic purity, which leads to exceptionally long spin coherence. These properties position silicon single-photon emitters and spin-photon interfaces among the most promising hardware platforms for implementing quantum networks and distributed quantum information processors. This review summarizes the current state of the art and open challenges towards coherent single-photon sources and scalable spin-photon interfaces based on color centers and erbium dopants in nanophotonic silicon structures.
On-demand single-photon sources operating at telecom wavelengths are crucial for quantum communication and photonic quantum technologies. In this work, we demonstrate high-purity, indistinguishable single-photon generation in the telecom O-band from an InAsP/InP nanowire quantum dot. We measured a single-photon purity of g2(0)=0.006±0.003 under above-band excitation. Furthermore, we characterize two-photon interference via Hong–Ou–Mandel measurements and achieve a photon indistinguishability of 81.1%±3.7% with a temporal postselection of a 300 ps time window and 5.6%±1.5% without temporal postselection. We estimate a first-lens source efficiency of ∼28%. These results highlight the potential of nanowire quantum dots as a promising source of telecom single photons for photonic quantum applications, offering deterministic positioning, efficient photon extraction, and scalable production.
Quantum interference between identical photons lies at the heart of our plan to construct a silicon photonic quantum computer. Several ground-breaking experiments have demonstrated the on-chip interference between photons generated in spiral [1] and ring resonator [2] sources. However, these two-photon experiments have relied on detecting the simultaneous arrival of a pair of photons from either source. In order that such experiments can be scaled-up, we require the multiplexing of probabilistic photon pair sources into an on-demand single photon source [3]. A first step towards this is to demonstrate heralded single photons from different sources will retain the purity and indistinguishability required to interfere with high visibility [4]. In our work we examine photon pair production by spontaneous four-wave mixing in a silicon waveguide source and determine the factors that limit the heralded two-photon interference visibility. We present a novel approach to modelling this generation process using the joint- temporal amplitude and compare our results with experimental data. [1] On-chip quantum interference between silicon photon-pair sources, Nature Photonics 8, 104, (2014). [2] Qubit entanglement between ring-resonator photon-pair sources on a silicon chip, Nature Communications 6, 7948, (2015). [3] Active temporal and spatial multiplexing of photons, Optica 3, 127, (2016) [4] Indistinguishable photon pair generation using two independent silicon wire waveguides, New Journal of Physics 13, 065005, (2011).
Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. The central requirements for the spin-photon interface at the heart of these systems are long spin coherence times and efficient spin-photon coupling at telecommunication wavelengths. Artificial atoms in silicon have a unique potential to combine the long coherence times of spins in silicon with telecommunication wavelength photons in the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of artificial atoms. An open challenge is to enhance this interaction via coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms at telecommunication wavelengths in silicon. We optimize photonic crystal cavities via inverse design and show controllable cavity-coupling of single G-centers in the telecommunications O-band. Our results illustrate the potential to achieve a deterministic spin-photon interface in silicon at telecommunication wavelengths, paving the way for scalable quantum information processing.