To study excitonic effects on high-harmonic generation (HHG) in Mott insulators, we investigate pumped nonequilibrium dynamics in the one-dimensional extended Hubbard model. By employing time-dependent calculations based on the exact diagonalization and infinite time-evolving block decimation methods, we find the strong enhancement of the HHG intensity around the exciton energy. The subcycle analysis in the sub-Mott-gap regime shows that the intensity region of the time-resolved spectrum around the exciton energy splits into two levels and oscillates following the driving electric field. This excitonic dynamics is qualitatively different from the dynamics of free doublon and holon but favorably contributes to HHG in the Mott insulator.
To study excitonic effects on high-harmonic generation (HHG) in Mott insulators, we investigate pumped nonequilibrium dynamics in the one-dimensional extended Hubbard model. By employing time-dependent calculations based on the exact diagonalization and infinite time-evolving block decimation methods, we find the strong enhancement of the HHG intensity around the exciton energy. The subcycle analysis in the sub-Mott-gap regime shows that the intensity region of the time-resolved spectrum around the exciton energy splits into two levels and oscillates following the driving electric field. This excitonic dynamics is qualitatively different from the dynamics of free doublon and holon but favorably contributes to HHG in the Mott insulator.
We study high-harmonic generation (HHG) in the one-dimensional Hubbard model in order to understand its relation to elementary excitations as well as the similarities and differences to semiconductors. The simulations are based on the infinite time-evolving block decimation (iTEBD) method and exact diagonalization. We clarify that the HHG originates from the doublon-holon recombination, and the scaling of the cutoff frequency is consistent with a linear dependence on the external field. We demonstrate that the subcycle features of the HHG can be reasonably described by a phenomenological three step model for a doublon-holon pair. We argue that the HHG in the one-dimensional Mott insulator is closely related to the dispersion of the doublon-holon pair with respect to its relative momentum, which is not necessarily captured by the single-particle spectrum due to the many-body nature of the elementary excitations. For the comparison to semiconductors, we introduce effective models obtained from the Schrieffer-Wolff transformation, i.e., a strong-coupling expansion, which allows us to disentangle the different processes involved in the Hubbard model: intraband dynamics of doublons and holons, interband dipole excitations, and spin exchanges. These demonstrate the formal similarity of the Mott system to the semiconductor models in the dipole gauge, and reveal that the spin dynamics, which does not directly affect the charge dynamics, can reduce the HHG intensity. We also show that the long-range component of the intraband dipole moment has a substantial effect on the HHG intensity, while the correlated hopping terms for the doublons and holons essentially determine the shape of the HHG spectrum. A new numerical method to evaluate single-particle spectra within the iTEBD method is also introduced.
High-harmonic generation (HHG) in strongly correlated Mott insulators is investigated using exact diagonalization and time-dependent density-matrix propagation of a laser-driven one-dimensional Hubbard chain. By projecting onto equilibrium Hubbard bands, we use the doublon population and its dynamics as a diagnostic to analyze intraband (spin-wave-like) and interband (doublon-holon creation) excitation channels. A filling-dependent crossover emerges: Bloch-like intraband response at dilute filling, mixed dynamics at intermediate filling, and interband-dominated HHG with plateau and cutoff near half filling. In the considered parameter range, increasing interaction strength U strongly suppresses interband contributions through the enlarged Mott gap and correlation-induced localization. Intra- and interband current decomposition reveals opposing flows below the Mott gap (Δ_{\mathrm{Mott}}) and selective dephasing suppression of interband coherence, enhancing net doublon accumulation. Time-frequency analysis uncovers the filling-dependent features of quantum trajectories, manifesting in distinct below-Δ_{\mathrm{Mott}} emission. This doublon-based analysis provides a transparent link between equilibrium spin-charge separation and nonequilibrium strong-field response, and clarifies how dephasing modifies interband coherence and doublon accumulation.
Using Floquet dynamical mean-field theory, we study the high-harmonic generation in the time-periodic steady states of wide-gap Mott insulators under ac driving. In the strong-field regime, the harmonic intensity exhibits multiple plateaus, whose cutoff energies ε_{cut}=U+mE_{0} scale with the Coulomb interaction U and the maximum field strength E_{0}. In this regime, the created doublons and holons are localized because of the strong field and the mth plateau originates from the recombination of mth nearest-neighbor doublon-holon pairs. In the weak-field regime, there is only a single plateau in the intensity, which originates from the recombination of itinerant doublons and holons. Here, ε_{cut}=Δ_{gap}+αE_{0}, with Δ_{gap} the band gap and α>1. We demonstrate that the Mott insulator shows a stronger high-harmonic intensity than a semiconductor model with the same dispersion as the Mott insulator, even if the semiconductor bands are broadened by impurity scattering to mimic the incoherent scattering in the Mott insulator.
The strong-field induced generation of nonclassical states of light is not only a subject of fundamental research but also has potential usage in quantum information science and technology. The emerging field of strong-field quantum optics has developed ways of generating nonclassical states of light from the process of high-harmonic generation (HHG) at much wider frequency ranges and intensities than is typical for quantum optics. Here, we study the response from an exciton in a Mott-insulating system, using the extended Hubbard model. We find that the exciton plays a key role in the nonclassical response and generates squeezing at the exciton energy, showing a clear mapping between the quantum nature of the electronic system and the quantum nature of emitted radiation. We relate this nonclassical response to the nonvanishing time correlations of the current operator in the system. Our work defines a direction for experimental work to search for squeezed light from HHG in a spectrally confined region defined by the exciton energy.
We study the high harmonic generation (HHG) in Mott insulators using Floquet dynamical mean-field theory (DMFT). We show that the main origin of the HHG in Mott insulators is the doublon-holon recombination, and that the character of the HHG spectrum differs depending on the field strength. In the weaker-field regime, the HHG spectrum shows a single plateau as in the HHG from gases, and its cut-off energy εcut scales linearly with the field strength E0 as εcut=Δgap+αE0, where Δgap is the Mott gap. On the other hand, in the stronger-field regime, multiple plateaus emerge and the m-th cut-off scales as εcut,m=U+mE0. We show that this difference originates from the different dynamics of the doublons and holons in the weak- and strong-field regimes. We also comment on the similarities and differences between HHG from Mott insulators and from semiconductors. This proceedings paper complements our recent work, Phys. Rev. Lett. 121, 057405 (2018), with additional results and analyses.
In recent years, the study of phenomena pertaining to non-linear properties of materials has seen a major upswing - especially in the context of High Harmonic Generation (HHG). In this thesis, an account of the current state of research in this area will be given. In addition, we seek to combine two seemingly disparate areas of research, both of which have been the subject of numerous years of intense research - namely those of HHG in solid state materials, and the optical response of strongly correlated quantum systems. To this end we will rely on solving the Fermi-Hubbard model coupled to an electromagnetic field under time propagation. With the aid of both numerical work and simple energy level analyses, we are able to explain most of the characteristics of our calculated spectra. High field strength will induce a Mott insulator to metal phase transition whose imprints will be established through time resolved high harmonic emission and doublon and spin correlation functions. The various HHG spectra, together with said correlation functions will be studied through an Exact diagonalization algorithm in conjunction with an Arnoldi-Lanczos time propagator. The parameter space considered is comprised of the electron-electron repulsion energy, U, and peak electric field strength. Additionally, the study is not restricted to half-filling, and results for doped materials will be presented. We find that the high U-induced energy gap in the Fermi-Hubbard model plays the same role as the valence-conduction bandgap in models like for instance the Semiconductor Bloch Equations when it comes to generating high harmonic radiation through multiphoton processes. The central part of this thesis aims at providing insight to and making further contributions to an article published in Nature Photonics in March 2018. [1]