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arXiv:2203.04567 · Physical Review Letters

Efficient Quadrature Squeezing from Biexcitonic Parametric Gain in Atomically Thin Semiconductors

Emil V. Denning, Andreas Knorr, Florian Katsch, Marten Richter

Published Aug 22, 2022• 7 citations
arXivHTMLPDF

Abstract

Modification of electromagnetic quantum fluctuations in the form of quadrature squeezing is a central quantum resource, which can be generated from nonlinear optical processes. Such a process is facilitated by coherent two-photon excitation of the strongly bound biexciton in atomically thin semiconductors. We show theoretically that interfacing an atomically thin semiconductor with an optical cavity makes it possible to harness this two-photon resonance and use the biexcitonic parametric gain to generate squeezed light with input power an order of magnitude below current state-of-the-art devices with conventional third-order nonlinear materials that rely on far off-resonant nonlinearities. Furthermore, the squeezing bandwidth is found to be in the range of several meV. These results identify atomically thin semiconductors as a promising candidate for on-chip squeezed-light sources.

DOI
10.1103/physrevlett.129.097401

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•Aug 24, 2005•23 citations
Modification of electromagnetic quantum fluctuations in the form of quadrature squeezing is a central quantum resource, which can be generated from nonlinear optical processes. Such a process is facilitated by coherent two-photon excitation of the strongly bound biexciton in atomically thin semiconductors. We show theoretically that interfacing an atomically thin semiconductor with an optical cavity makes it possible to harness this two-photon resonance and use the biexcitonic parametric gain to generate squeezed light with input power an order of magnitude below current state-of-the-art devices with conventional third-order nonlinear materials that rely on far off-resonant nonlinearities. Furthermore, the squeezing bandwidth is found to be in the range of several meV. These results identify atomically thin semiconductors as a promising candidate for on-chip squeezed-light sources.
Nonlinear optical effects such as four-wave mixing and generation of squeezed light are ubiquitous in optical devices and light sources. For new devices operating at low optical power, the resonant nonlinearity arising from the two-photon sensitive bound biexciton in a semiconductor microcavity is an interesting prospective platform. Due to the particularly strong Coulomb interaction in atomically thin semiconductors, these materials have strongly bound biexcitons and operate in the visible frequency range of the electromagnetic spectrum. To remove the strong pump laser from the generated light in optical devices or to simultaneously excite nondegenerate polaritons, a bichromatic-pump configuration with two spectrally separated pump lasers is desirable. In this paper, we theoretically investigate spontaneous four-wave mixing and quadrature-squeezing in a bichromatically pumped atomically thin semiconductor microcavity. We explore two different configurations that support degenerate and nondegenerate scattering from polaritons into bound biexcitons, respectively. We find that these configurations lead to the generation of strongly single- and two-mode quadrature-squeezed light.
Quantum optical technologies promise advances in sensing, computing, and communication. A key resource is squeezed light, where quantum noise is redistributed between optical quadratures. We introduce a monolithic, chip-scale platform that exploits the χ (2) nonlinearity of a thin-film lithium niobate (TFLN) resonator device to efficiently generate squeezed states of light. Our system integrates all essential components—except for the laser and two detectors—on a single chip with an area of one square centimeter, reducing the size, operational complexity, and power consumption associated with conventional setups. Using the balanced homodyne measurement subsystem that we implemented on the same chip, we measure a squeezing of 0.55 decibels and an anti-squeezing of 1.55 decibels. We use 20 milliwatts of input power to generate the parametric oscillator pump field by using second harmonic generation on the same chip. Our work represents a step toward compact and efficient quantum optical systems posed to leverage the rapid advances in integrated nonlinear and quantum photonics.
The signal to noise ratio of optical systems is ultimately limited by the shot noise due to the Poissonian statistics of the light field. In recent years there has been a considerable effort to find ways to overcome this limitation by generating non-classical light with sub-shot noise statistics. Several groups have demonstrated non-classical light generation in diode lasers or light emitting diodes, and the amplitude fluctuations have been reduced substantially below the shot noise level [1,2]. However, for phase-sensitive measurements it is necessary to generate the more general quadrature squeezed states. Such quadrature squeezed light can be generated either by second-order or third-order nonlinear processes provided the nonlinear material has very low losses at the optical wavelength. To date, the successful generation schemes for quadrature squeezed light have been restricted to atomic vapours, optical fibres, or second-order nonlinear crystals [3]. The possibility of using the large χ(3) nonlinearities of semiconductors at frequencies below the band gap where the optical absorption is small has been discussed in the literature, but so far there have been no successful experiments [4-6]. In this paper we report measurements on GaAs/Al0.3Ga0.7As multiple quantum well waveguides and bulk ZnS in the wavelength range 750 - 890nm. Although we measure much larger nonlinearities in the quantum wells, the strong two-photon absorption is detrimental for squeezed light generation. However, in the ZnS where the laser frequency is below the two- photon absorption edge, we have succeeded in generating quadrature squeezed light in a semiconductor for the first time. On the basis of our results, we would expect that squeezed light could be generated in many other semiconductor systems provided the photon energy is less than half the band-gap energy.
We have generated pulsed squeezed light using the third-order nonlinear susceptibility of the semiconductor ZnS at room temperature. The photon energy was chosen to be below midgap in order to minimize nonlinear absorption. Efficient quadrature squeezing of 2.2 dB (40%) was obtained using 125 fs pulses at a center wavelength of 780 nm. The measured noise is suppressed below the quantum limit over the entire range of our detection bandwidth (30-50 MHz). The scheme employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths.
Squeezed light is a key quantum resource that enables quantum advantages for sensing, networking, and computing applications. The scalable generation and manipulation of squeezed light with integrated platforms are highly desired for the development of quantum technology with continuous variables. In this Letter, we demonstrate squeezed light generation with thin-film lithium niobate integrated photonics. Parametric down-conversion is realized with quasi-phase matching using ferroelectric domain engineering. With sub-wavelength mode confinement, efficient nonlinear processes can be observed with single-pass configuration. We measure 0.56 ± 0.09 dB quadrature squeezing (∼2.6 dB inferred on-chip). The single-pass configuration further enables the generation of squeezed light with large spectral bandwidth up to 7 THz. This work represents a significant step towards the on-chip implementation of continuous-variable quantum information processing.
We have generated pulsed squeezed light using the third-order nonlinear susceptibility of the semiconductor ZnS at room temperature. The photon energy was chosen to be below midgap in order to minimize nonlinear absorption. Efficient quadrature squeezing of 2.2 dB (40%) was obtained using 125 fs pulses at a center wavelength of 780 nm. The measured noise is suppressed below the quantum limit over the entire range of our detection bandwidth (30–50 MHz). The scheme employed can generally be applied to semiconductors, and opens the way for squeezed light generation over a wide range of wavelengths.