Abstract This article mainly focuses on important quantum phenomenon called entanglement arising the nonlinearity property. This study uses a unique approach in which transistor nonlinearity effect (third-order nonlinearity) entangled microwave photons are created in a cryogenic low-noise amplifier (LNA). For entanglement analysis, the Hamiltonian of the designed cryogenic LNA (containing two coupled oscillators) is derived, and then, using the dynamic equation of motion, the oscillator’s number of photons and the phase-sensitive cross-correlation factor are calculated in the Fourier domain to calculate the entanglement metric. The oscillators are coupled to each other through the gate–drain capacitor, and nonlinear transconductance is as an important factor strongly manipulating the entanglement. As a main conclusion, the study shows that the designed circuit using transistor third-order nonlinearity has the ability to generate the entangled microwave photons at very low intrinsic transconductance and more importantly when the noise figure (NF) is strongly minimized. As a complementary task, the printed circuit board of the cryogenic LNA is designed and simulated to verify the ability of the circuit to achieve an ultralow NF, by which the probability of the generation of entangled microwave photons is increased.
Abstract This article mainly focuses on important quantum phenomenon called entanglement arising the nonlinearity property. This study uses a unique approach in which transistor nonlinearity effect (third-order nonlinearity) entangled microwave photons are created in a cryogenic low-noise amplifier (LNA). For entanglement analysis, the Hamiltonian of the designed cryogenic LNA (containing two coupled oscillators) is derived, and then, using the dynamic equation of motion, the oscillator’s number of photons and the phase-sensitive cross-correlation factor are calculated in the Fourier domain to calculate the entanglement metric. The oscillators are coupled to each other through the gate–drain capacitor, and nonlinear transconductance is as an important factor strongly manipulating the entanglement. As a main conclusion, the study shows that the designed circuit using transistor third-order nonlinearity has the ability to generate the entangled microwave photons at very low intrinsic transconductance and more importantly when the noise figure (NF) is strongly minimized. As a complementary task, the printed circuit board of the cryogenic LNA is designed and simulated to verify the ability of the circuit to achieve an ultralow NF, by which the probability of the generation of entangled microwave photons is increased.
Abstract This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the transistor’s nonlinearity; more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects, such as capacitance, inductance, and second-order transconductance, by which the properties of the external oscillators are changed. These changes may lead to squeezing or manipulating the parameters related to squeezing in the oscillators. In addition, it is theoretically derived that the circuit can generate two-mode squeezing. Finally, second-order correlation (photon counting statistics) is studied, and the results demonstrate that the designed circuit exhibits antibunching, where the quadrature operator shows squeezing behavior.
This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT transistor operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms, by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the nonlinearity of the transistor, and more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects such as capacitance, inductance, and second-order transconductance, by which the properties of the external oscillators are changed. These changes may lead to squeezing or manipulation of the parameters related to squeezing in the oscillators. In addition, it is theoretically derived that the circuit can generate two-mode squeezing. Finally, second-order correlation (photon counting statistics) is studied as a complementary task, and the results demonstrate that the designed circuit exhibits antibunching, where the quadrature operator shows squeezing behavior.
This study significantly concentrates on cryogenic InP HEMT high-frequency circuit analysis using quantum theory to find how the transistor nonlinearity can affect the quantum correlation of the modes generated. Firstly, the total Hamiltonian of the circuit is derived, and the dynamic equation of the motion contributed is examined using the Heisenberg-Langevin equation. Using the nonlinear Hamiltonian, some components are attached to the intrinsic internal circuit of InP HEMT to address the circuit characteristics fully. The components attached are arisen due to the nonlinearity effects. As a result, the theoretical calculations show that the states generated in the circuit are mixed, and no pure state is produced. Accordingly, the modified circuit generates the two-mode squeezed thermal state, which means one can focus on calculating the Gaussian quantum discord to evaluate quantum correlation. It is also found that the nonlinearity factors (addressed as the nonlinear components in the circuit) can intensely influence the squeezed thermal state by which the quantum discord is changed. Finally, as the primary point, it is concluded that although it is possible to enhance the quantum correlation between modes by engineering the nonlinear components; however, attaining quantum discord greater than unity, entangled microwave photons, seems a challenging task since InP HEMT operates at 4.2 K.
In this study, we present the design and analysis of a Low Noise Amplifier tailored specifically for quantum applications. We selected the HEMT for its unique noise reduction properties, crucial for quantum engineering. The main goal is to minimize the noise figure within the C-band frequency range (4-8 GHz) to induce nonclassicality in quantum signals. While achieving a noise figure of less than 0.065 dB within this band, we recognized the trade-off with gain, mitigated by incorporating additional stages to maintain noise figure at optimal levels. Quantum analysis of the circuit, employing a simplified model of HEMT due to its complexity, revealed insights into its nonlinear properties and interactions between circuit components and environmental factors. Leveraging Qutip toolbox in Python, we conducted time-evolution analysis of the system, revealing the circuit's behavior as an open quantum system under cryogenic conditions. Our investigation extends to quantifying quantum correlation (quantum discord) and its relationship with noise figure, posing important questions regarding the direct impact of its minimization on circuit nonclassicality at cryogenic temperatures. This comprehensive study sheds light on the intricate interplay between circuit design, and its influence on the relationship between the noise figure and quantum correlation.
Abstract The present article primarily focuses on the design of an ultra-low-noise amplifier specifically tailored for quantum applications. The circuit design places a significant emphasis on improving the noise figure, as quantum-associated applications require the circuit's noise temperature to be around 0.4 K. This requirement aims to achieve performance comparable to the Josephson Junction amplifier. Although this task presents considerable challenges, the work concentrates on engineering the circuit to minimize mismatch and reflection coefficients, while simultaneously enhancing circuit transconductance. These efforts aim to improve the noise figure as efficiently as possible. The results of this study indicate the possibility of achieving a noise figure of approximately 0.009 dB for a unique circuit design operating at 10 K. In a departure from traditional approaches, this study employs quantum mechanical theory to analyze the circuit comprehensively. By employing quantum theory, the researchers derive relationships that highlight the crucial quantities upon which the circuit design should focus to optimize the noise figure. For example, the circuit's gain power, which depends on the circuit's photonic modes, is theoretically derived and found to affect the noise figure directly. Ultimately, by merging quantum theory with engineering approaches, this study successfully designs a highly efficient circuit that significantly minimizes the noise figure in a quantum application setting.
Large-scale superconducting quantum computers require massive numbers of high-performance cryogenic low-noise amplifiers (cryo-LNA) for qubit readout. Here we present a C-Band monolithic microwave integrated circuit (MMIC) cryo-LNA for this purpose. This cryo-LNA is based on 150 nm GaAs pseudomorphic high electron mobility transistor (pHEMT) process and implemented with a three-stage cascaded architecture, where the first stage adopts careful impedance match to optimize the noise and return loss. The integration of negative feedback loops adopted in the second and third-stage enhances the overall stability. Moreover, the pHEMT-self bias and current multiplexing circuitry structure facilitate the reduction of power consumption and require only single bias line. Operating at an ambient temperature of 3.6 K and consuming 15 mW, the cryo-LNA demonstrates good performance in the C-band, reaching a 5 K equivalent noise temperature and an average gain of 40 dB. We further benchmark this cryo-LNA with superconducting qubits, achieving an average single-shot dispersive readout fidelity of 98.3% without assistance from a quantum-limited parametric amplifier. The development of GaAs cryo-LNA diversifies technical support necessary for large-scale quantum applications.