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arXiv:2201.03691 · Physical Review Letters

On-Demand Integrated Quantum Memory for Polarization Qubits

Tian-Xiang Zhu, Chao Liu, Ming Jin, Ming-Xu Su, Yuping Liu, Wenjuan Li, Yang Ye, Zong‐Quan Zhou, Chuan‐Feng Li, Guang‐Can Guo

Published May 2, 2022• 45 citations
arXivHTMLPDF

Abstract

Photonic polarization qubits are widely used in quantum computation and quantum communication due to the robustness in transmission and the easy qubit manipulation. An integrated quantum memory for polarization qubits is a useful building block for large-scale integrated quantum networks. However, on-demand storing polarization qubits in an integrated quantum memory is a long-standing challenge due to the anisotropic absorption of solids and the polarization-dependent features of microstructures. Here we demonstrate a reliable on-demand quantum memory for polarization qubits, using a depressed-cladding waveguide fabricated in a ^{151}Eu^{3+}:Y_{2}SiO_{5} crystal. The site-2 ^{151}Eu^{3+} ions in Y_{2}SiO_{5} crystal provides a near-uniform absorption for arbitrary polarization states and a new pump sequence is developed to prepare a wideband and enhanced absorption profile. A fidelity of 99.4±0.6% is obtained for the qubit storage process with an input of 0.32 photons per pulse, together with a storage bandwidth of 10 MHz. This reliable integrated quantum memory for polarization qubits reveals the potential for use in the construction of integrated quantum networks.

DOI
10.1103/physrevlett.128.180501

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Photonic quantum memory is the core element in quantum information processing (QIP). For the scalable and convenient practical applications, great efforts have been devoted to the integrated quantum memory based on various waveguides fabricated in solids. However, on-demand storage of qubits, which is an essential requirement for QIP, is still challenging to be implemented using such integrated quantum memory. Here we report the on-demand storage of time-bin qubits in an on-chip waveguide memory fabricated on the surface of a ^{151}Eu^{3+}:Y_{2}SiO_{5} crystal, utilizing the Stark-modulated atomic frequency comb protocol. A qubit storage fidelity of 99.3%±0.2% is obtained with single-photon-level coherent pulses, far beyond the highest fidelity achievable using the classical measure-and-prepare strategy. The developed integrated quantum memory with the on-demand retrieval capability represents an important step toward practical applications of integrated quantum nodes in quantum networks.
Quantum memories for light are essential building blocks for quantum repeaters and quantum networks. Integrated operations of quantum memories could enable scalable application with low-power consumption. However, the photonic quantum storage lifetime in integrated devices has so far been limited to tens of microseconds, falling short of the requirements for practical applications. Here, we demonstrate quantum storage of photonic qubits for 1.021 milliseconds based on a laser-written optical waveguide fabricated in a 151 Eu 3+ :Y 2 SiO 5 crystal. Spin dephasing of 151 Eu 3+ is mitigated through dynamical decoupling applied via on-chip electric waveguides, and we obtain a storage efficiency of 12.0 ± 0.5% at 1.021 milliseconds, which is a demonstration of integrated quantum memories that outperforms the efficiency of a simple fiber delay line. Such long-lived waveguide-based quantum memory could support applications in quantum repeaters, and further combination with critical magnetic fields could enable potential application as transportable quantum memories.
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Storage of quantum information encoded into heralded single photons is an essential constituent of long-distance quantum communication based on quantum repeaters and of optical quantum information processing. The storage of photonic polarization qubits is, however, difficult because many materials are birefringent and have polarization-dependent absorption. Here we present a simple scheme that eliminates these polarization effects, and we demonstrate it by storing heralded polarization qubits into a solid-state quantum memory. The quantum memory is implemented with a biaxial yttrium orthosilicate (Y2SiO5) crystal doped with rare-earth ions. Heralded single photons generated from a filtered spontaneous parametric down-conversion source are stored, and quantum state tomography of the retrieved polarization state reveals an average fidelity of 97.5±0.4%, which is significantly higher than what is achievable with a measure-and-prepare strategy.
Quantum memories, for storing then retrieving photonic quantum states on demand, are crucial components for scalable quantum technologies. Spontaneous parametric downconversion (SPDC) with a nonlinear crystal is the most widely used process for generating entangled photon pairs or heralded single photons. Despite the desirability of efficient quantum memories for SPDC-generated single photons, the storage and retrieval efficiencies achieved with this approach still fall below 50%, a threshold value for practical applications. Here, we report an efficiency of > 70% for the storage of heralded single photons generated by cavity-enhanced SPDC using atomic quantum memories based on electromagnetically induced transparency (EIT). In addition, we demonstrate the quantum memory for single-photon polarization qubits with a fidelity of ∼96%. This result paves the way towards the development of large-scale quantum networks.