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arXiv:2101.01475 · Physical Review A

Quantum adiabatic doping for atomic Fermi-Hubbard quantum simulations

Jue Nan, Jian Hui Lin, Yuchen Luo, Bo Zhao, Xiaopeng Li

Published Apr 16, 2021• 1 citation
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Abstract

It is important to dope the antiferromagnetic state while preserving low entropy, in the quantum simulation of the Fermi-Hubbard model. In a recent work [Phys. Rev. Lett. 123, 233603 (2019)], we proposed a quantum adiabatic doping protocol using an incommensurate lattice potential, where its feasibility is demonstrated with a certain particle-doping fraction. Here, we carry out a systematic study of quantum adiabatic doping for a wide range of doping fractions including both particle doping and hole doping, with both commensurate and incommensurate cases considered. We find that there is still a localizationlike slowing-down problem even at commensurate fillings, and that it becomes less harmful in the hole-doped regime. With interactions, the adiabatic preparation is found to be more efficient because the interaction effect destabilizes localization. For both free and interacting cases, we find adiabatic doping has a better performance in the hole-doped regime than the particle-doped regime. We also investigate adiabatic doping starting from a half-filling Mott insulator, which is found to be more efficient for certain filling fractions.

DOI
10.1103/physreva.103.043320

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It is important to dope the antiferromagnetic state while preserving low entropy, in the quantum simulation of the Fermi-Hubbard model. In a recent work [Phys. Rev. Lett. 123, 233603 (2019)], we proposed a quantum adiabatic doping protocol using an incommensurate lattice potential, where its feasibility is demonstrated with a certain particle-doping fraction. Here, we carry out a systematic study of quantum adiabatic doping for a wide range of doping fractions including both particle doping and hole doping, with both commensurate and incommensurate cases considered. We find that there is still a localizationlike slowing-down problem even at commensurate fillings, and that it becomes less harmful in the hole-doped regime. With interactions, the adiabatic preparation is found to be more efficient because the interaction effect destabilizes localization. For both free and interacting cases, we find adiabatic doping has a better performance in the hole-doped regime than the particle-doped regime. We also investigate adiabatic doping starting from a half-filling Mott insulator, which is found to be more efficient for certain filling fractions.
Quantum simulations of Fermi-Hubbard models have been attracting considerable effort in the optical lattice research, with the ultracold antiferromagnetic atomic phase reached at half filling in recent years. An unresolved issue is to dope the system while maintaining the low thermal entropy. Here we propose to achieve the low temperature phase of the doped Fermi-Hubbard model using incommensurate optical lattices through adiabatic quantum evolution. In this theoretical proposal, we find that one major problem about the adiabatic doping is atomic localization in the incommensurate lattice, potentially causing an exponential slowing down of the adiabatic procedure. We study both one- and two-dimensional incommensurate optical lattices, and find that the localization prevents efficient adiabatic doping in the strong lattice regime for both cases. With density matrix renormalization group calculation, we further show that the slowing down problem in one dimension can be circumvented by considering interaction induced many-body delocalization, which is experimentally feasible using Feshbach resonance techniques. This protocol is expected to be efficient as well in two dimensions where the localization phenomenon is less stable.
How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole doping based on a bilayer generalization of a Hubbard model. The projector quantum Monte Carlo simulations are employed, which are sign problem free both at and away from half filling. An anisotropic Ising antiferromagnetic Mott insulating phase occurs at half filling, which is weakened by hole doping. Below a critical doping value, antiferromagnetism coexists with the singlet superconductivity, which is a pairing across each rung with an extended sss-wave symmetry. As doping further increases, the antiferromagnetic order vanishes, leaving only a superconducting phase. These results provide important information on how superconductivity appears upon doping the parent Mott-insulating state.
Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behavior. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band. To this end, we focus on the two-dimensional Hubbard model. Because the charge gap arises from on-site correlations, we have been refining the nonperturbative approach of Matsumoto and Mancini [Phys. Rev. B 55, 2095 (1997)] which incorporates local physics. Crucial to this method is a self-consistent two-site dynamical cluster expansion which builds in the nearest-neighbor energy scale J. At half-filling, we find that the spectral function possesses a gap of order U and is devoid of any coherent quasiparticle peaks although ordering or charge fractionalization are absent. At low temperatures, local antiferromagnetic correlations emerge. In the doped case, we find that the Fermi surface exceeds the Luttinger volume. The breakdown of Luttinger's theorem in the underdoped regime is traced both to the dynamically generated Mott gap as well to a nonvanishing of the imaginary part of the self-energy at the Fermi level. Spectral weight transfer across the Mott gap also emerges as a ubiquitous feature of a doped Mott insulator and suggests that high- and low-energy scales are inseparable. Additionally in the underdoped regime, we find that a pseudogap exists in the single-particle density of states as well as in the heat capacity. The pseudogap (which is set by the energy scale t2/U){t}^{2}/U)t2/U) is argued to be a ubiquitous feature of a lightly doped Mott state and simply represents the fact that hole transport involves double occupancy. In analogy with the Mott gap and antiferromagnetism, we propose that ordering may also accompany the formation of a pseudogap. We suggest a current pattern within a one-band model that preserves translational but breaks time-reversal symmetry along the canonical x and y axes but not along $x=\ifmmode\pm\else\textpm\fi{}y$ that is consistent with the experimental observations. Finally, we show that the Hall coefficient in a doped Mott insulator must change sign at a doping level x<1/3.x<1/3.x<1/3. The sign change is tied to a termination of strong correlation physics in the doped Mott state.
We employ a family of ancilla qubit variational wave functions [Y.-H. Zhang and S. Sachdev, Phys. Rev. Res. 2 , 023172 (2020)] to describe the polaronic correlations in the pseudogap metal phase of a hole-doped 2D Fermi–Hubbard model. Comparison to ultracold atom quantum simulator data [J. Koepsell et al ., Science 374 , 82 (2021)] reveals both qualitative and quantitative agreement with the numerical analysis from half-filling up to 80% hole-doping, capturing the crossover from the polaronic regime to the Fermi liquid observed around 40% doping.
Ultracold fermionic atoms in optical lattices offer pristine realizations of Hubbard models1, which are fundamental to modern condensed-matter physics2,3. Despite notable advancements4–6, the accessible temperatures in these optical lattice material analogues are still too high to address many open problems7–10. Here we demonstrate a several-fold reduction in temperature6,11–13, bringing large-scale quantum simulations of the Hubbard model into an entirely new regime. This is accomplished by transforming a low-entropy product state into strongly correlated states of interest via dynamic control of the model parameters14,15, which is extremely challenging to simulate classically10. At half-filling, the long-range antiferromagnetic order is close to saturation, leading to a temperature of T/t=0.05−0.05+0.06T/t=0.0{5}_{-0.05}^{+0.06}T/t=0.05−0.05+0.06​ based on comparisons with numerically exact simulations. Doped away from half-filling, it is exceedingly challenging to realize systematically accurate and predictive numerical simulations9. Importantly, we are able to use quantum simulation to identify a new pathway for achieving similarly low temperatures with doping. This is confirmed by comparing short-range spin correlations to state-of-the-art, but approximate, constrained-path auxiliary-field quantum Monte Carlo simulations16–18. Compared with the cuprates2,19,20, the reported temperatures correspond to a reduction from far above to below room temperature, at which physics such as the pseudogap and stripe phases may be expected3,19,21–24. Our work opens the door to quantum simulations that solve open questions in material science, develop synergies with numerical methods and theoretical studies, and lead to discoveries of new physics8,10. A several-fold reduction in temperature is accomplished using a neutral-atom Hubbard quantum simulator by transforming a low-entropy product state into strongly correlated states of interest via dynamic control of the model parameters.
Implementing an improved method for analytic continuation and working with imaginary-time correlation functions computed using quantum Monte Carlo simulations, we resolve the single-particle dispersion relation and the density of states (DOS) of the two-dimensional Hubbard model at half filling. At intermediate interactions of U/t=4,6U/t=4,6U/t=4,6, we find quadratic dispersion around the gap minimum at wave vectors $\mathbf{k}=(\ifmmode\pm\else\textpm\fi{}\ensuremath{\pi}/2,\ifmmode\pm\else\textpm\fi{}\ensuremath{\pi}/2)$ (the $\mathrm{\ensuremath{\Sigma}}$ points). We find saddle points at $\mathbf{k}=(\ifmmode\pm\else\textpm\fi{}\ensuremath{\pi},0),(0,\ifmmode\pm\else\textpm\fi{}\ensuremath{\pi})$ (the XXX points), where the dispersion is approximately quartic, leading to a sharp DOS maximum above the almost flat ledge arising from the states close to $\mathrm{\ensuremath{\Sigma}}$. The fraction of quasiparticle states within the ledge is ${n}_{\mathrm{ledge}}\ensuremath{\approx}0.15$. Upon doping away from half filling, within the rigid-band approximation, these results support Fermi pockets around the $\mathrm{\ensuremath{\Sigma}}$ points, with states around the XXX points becoming filled only at doping fractions $x\ensuremath{\ge}{n}_{\mathrm{ledge}}$. The high density of states away from the $\mathrm{\ensuremath{\Sigma}}$ gap edge may be an important clue for a finite minimum doping level for superconductivity and other instabilities of doped Mott insulators.