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arXiv:2007.03404 · Physical Review Applied

Ultraviolet Laser Pulses with Multigigahertz Repetition Rate and Multiwatt Average Power for Fast Trapped-Ion Entanglement Operations

Mahmood Irtiza Hussain, D. Heinrich, Milena Guevara-Bertsch, E. Torrontegui, Juan José García‐Ripoll, Christian F. Roos, R. Blatt

Published Feb 23, 2021• 11 citations

Abstract

The conventional approach to perform two-qubit gate operations in trapped ions relies on exciting the ions on motional sidebands with laser light, which is an inherently slow process. One way to implement a fast entangling-gate protocol requires a suitable pulsed laser to increase the gate speed by orders of magnitude. However, the realization of such a fast entangling-gate operation presents a big technical challenge, as such the required laser source is not available off the shelf. For this, we engineer an ultrafast entangling-gate source based on a frequency comb. The source generates bursts of several hundred mode-locked pulses with pulse energy approximately 800 pJ at 5-GHz repetition rate at 393.3 nm and complies with all requirements for implementing a fast two-qubit gate operation. Using a single, chirped ultraviolet pulse, we demonstrate a rapid adiabatic passage in a ${\mathrm{Ca}}^{+}$ ion. To verify the applicability and projected performance of the laser system for inducing entangling gates we run simulations based on our source parameters. The gate time can be faster than a trap period with an error approaching ${10}^{\ensuremath{-}4}$.

DOI: 10.1103/physrevapplied.15.024054

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The conventional approach to perform two-qubit gate operations in trapped ions relies on exciting the ions on motional sidebands with laser light, which is an inherently slow process. One way to implement a fast entangling-gate protocol requires a suitable pulsed laser to increase the gate speed by orders of magnitude. However, the realization of such a fast entangling-gate operation presents a big technical challenge, as such the required laser source is not available off the shelf. For this, we engineer an ultrafast entangling-gate source based on a frequency comb. The source generates bursts of several hundred mode-locked pulses with pulse energy approximately 800 pJ at 5-GHz repetition rate at 393.3 nm and complies with all requirements for implementing a fast two-qubit gate operation. Using a single, chirped ultraviolet pulse, we demonstrate a rapid adiabatic passage in a

{\mathrm{Ca}}^{+}

ion. To verify the applicability and projected performance of the laser system for inducing entangling gates we run simulations based on our source parameters. The gate time can be faster than a trap period with an error approaching

{10}^{\ensuremath{-}4}

.

Trapped ions are a major candidate technology for scalable quantum computation. However, current methods for performing quantum logic gates with trapped ions are limited to gate times of about 10 μs. This drawback was solved in a recently proposed scheme that uses pairs of counter-propagating π-pulses, resonant with an allowed ion transition, where the time needed for a gate operation is inversely proportional to the laser repetition rate. The MOPA architecture allows scaling to high repetition rate at constant pulse energy. In this paper, the authors designed a laser system to provide high-power picosecond pulses with a high repetition rate resonant with the 370 nm S-P transition in Yb+. The laser source is almost completely implemented in fibre, lending increased stability to the system. As ultrafast laser sources are not readily available at 370 nm, with sufficient optical power, pulses were prepared and amplified over a number of stages. A harmonically mode-locked Er-doped fibre (EDF) seed laser, with a repetition rate of 300 MHz and a wavelength of 1564 nm is amplified and compressed to form shorter femtosecond pulses at high power.

Non-adiabatic two-qubit gate proposals for trapped-ion systems offer superior performance and flexibility over adiabatic schemes at the cost of increased laser control requirements. Existing fast gate schemes are limited by single-qubit transition errors, which constrain the total number of pulses in high-fidelity solutions. We introduce an improved gate search scheme that enables both local and non-local two-qubit gates in chains containing tens of ions. These protocols use a multi-objective machine design approach that incorporates dominant sources of error in the design to ensure the solutions are compatible with existing fast laser controls. We also generalize previous schemes by allowing for unpaired pulses during the gate evolution. By imposing symmetries on the pulse sequences, we eliminate susceptibility to laser phase noise and further simplify the multi-mode control over the state-dependent motion of the ion crystal. We perform a comprehensive analysis of expected gate performance in the presence of random and systematic experimental errors to demonstrate the feasibility of performing microsecond two-qubit gates between arbitrary ion pairs in current linear ion-trap processors of up to

50

ions with fidelities approaching

99.9\%

.

Fast entangling quantum gates can significantly enhance the performance of a trapped-ion quantum computer. In pursuit of implementing a fast two-qubit gate, we investigate the coherent excitation of a 40 Ca + ion with a train of picosecond pulses resonant to the 4S 1/2 4P 3/2 transition. The optical pulse train is derived from a mode-locked, stabilized optical frequency comb. We implement two techniques to characterize the pulse-ion interaction and show how all requirements can be met for an implementation of a fast phase gate operation.

Fast entangling gates for trapped ion pairs offer vastly improved gate operation times relative to implemented gates, as well as approaches to trap scaling. Gates on a neighbouring ion pair only involve local ions when performed sufficiently fast, and we find that even a fast gate between a pair of distant ions with few degrees of freedom restores all the motional modes given more stringent gate speed conditions. We compare pulsed fast gate schemes, defined by a timescale faster than the trap period, and find that our proposed scheme has less stringent requirements on laser repetition rate for achieving arbitrary gate time targets and infidelities well below 10 −4 . By extending gate schemes to ion crystals, we explore the effect of ion number on gate fidelity for coupling two neighbouring ions in large crystals. Inter-ion distance determines the gate time, and a factor of five increase in repetition rate, or correspondingly the laser power, reduces the infidelity by almost two orders of magnitude. We also apply our fast gate scheme to entangle the first and last ions in a crystal. As the number of ions in the crystal increases, significant increases in the laser power are required to provide the short gate times corresponding to fidelity above 0.99.

Abstract We propose and study ways speeding up of the entangling operations in the trapped ions system with high fidelity. First, we find a scheme to increase the speed of a two-qubit gate without the limitation of trap frequency, which was considered as the fundamental limit. Second, we study the fast gate scheme for entangling more than two qubits simultaneously. We apply the method of applying multiple frequency components on laser beams for the gate operations. In particular, in order to avoid infinite terms from the coupling to carrier transition, we focus on the phase-insensitive gate scheme here. We carefully study the effect of large excitation of motional mode beyond the limit of Lamb–Dicke approximation by including up to second order terms of the Lamb–Dicke parameter. We study the speed limit of multi-qubit global entangling gates without individual addressing requirements. Furthermore, our gates can be made insensitive to the fluctuation of initial motional phases which are difficult to stabilise in the phase-insensitive gate scheme.