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arXiv:2005.10822

Observation of a marginal Fermi glass using THz 2D coherent spectroscopy

Fahad Mahmood, Dipanjan Chaudhuri, Sarang Gopalakrishnan, Rahul Nandkishore, N. P. Armitage

Published May 21, 2020• 3 citations
arXivHTMLPDF

Abstract

A longstanding open problem in condensed matter physics is whether or not a strongly disordered interacting insulator can be mapped to a system of effectively non-interacting localized excitations. We investigate this issue on the insulating side of the 3D metal-insulator transition (MIT) in phosphorus doped silicon using the new technique of terahertz two dimensional coherent spectroscopy. Despite the intrinsically disordered nature of these materials, we observe coherent excitations and strong photon echoes that provide us with a powerful method for the study of their decay processes. We extract the first measurements of energy relaxation ($T_1$) and decoherence ($T_2$) times close to the MIT in this classic system. We observe that (i) both relaxation rates are linear in excitation frequency with a slope close to unity, (ii) the energy relaxation timescale $T_1$ counterintuitively increases with increasing temperature and (iii) the coherence relaxation timescale $T_2$ has little temperature dependence between 5 K and 25 K, but counterintuitively increases as the material is doped towards the MIT. We argue that these features imply that (a) the system behaves as a well isolated electronic system on the timescales of interest, and (b) relaxation is controlled by electron-electron interactions. We discuss the potential relaxation channels that may explain the behavior. Our observations constitute a qualitatively new phenomenology, driven by the interplay of strong disorder and strong electron-electron interactions, which we dub the marginal Fermi glass.

DOI
10.48550/arxiv.2005.10822

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A longstanding open problem in condensed matter physics is whether or not a strongly disordered interacting insulator can be mapped to a system of effectively non-interacting localized excitations. We investigate this issue on the insulating side of the 3D metal-insulator transition (MIT) in phosphorus doped silicon using the new technique of terahertz two dimensional coherent spectroscopy. Despite the intrinsically disordered nature of these materials, we observe coherent excitations and strong photon echoes that provide us with a powerful method for the study of their decay processes. We extract the first measurements of energy relaxation (T1T_1T1​) and decoherence (T2T_2T2​) times close to the MIT in this classic system. We observe that (i) both relaxation rates are linear in excitation frequency with a slope close to unity, (ii) the energy relaxation timescale T1T_1T1​ counterintuitively increases with increasing temperature and (iii) the coherence relaxation timescale T2T_2T2​ has little temperature dependence between 5 K and 25 K, but counterintuitively increases as the material is doped towards the MIT. We argue that these features imply that (a) the system behaves as a well isolated electronic system on the timescales of interest, and (b) relaxation is controlled by electron-electron interactions. We discuss the potential relaxation channels that may explain the behavior. Our observations constitute a qualitatively new phenomenology, driven by the interplay of strong disorder and strong electron-electron interactions, which we dub the marginal Fermi glass.
This chapter focuses on studies of the critical behavior of conductivity in two-dimensional electron systems (2DES) with different amounts and types of disorder as well as different ranges of Coulomb interactions, in order to identify possible universality classes of the 2D metal-insulator transition (MIT). It discusses the manifestations of glassiness in both low- and high-disorder samples. The chapter examines the critical region near the 2D MIT in particular on describing conductivity measurements that have demonstrated dynamical scaling, the main signature of the MIT as a quantum phase transition. It also focuses on experiments that probe the nature of the insulating state, as well as charge dynamics across the MIT, in both high- and low-disorder 2DESs. There is substantial evidence that in many materials near the MIT both strong electronic correlations and disorder play an important role, and thus their competition is expected to lead to glassy behavior of electrons, in analogy with other frustrated systems.
This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.
This paper describes experiments utilizing a unique property of electron glasses to gain information on the fundamental nature of the interacting Anderson-localized phase. The methodology is based on measuring the energy absorbed by the electronic system from alternating electromagnetic fields as a function of their frequency. Experiments on three-dimensional (3D) amorphous indium-oxide films suggest that, in the strongly localized regime, the energy spectrum is discrete and inelastic electron-electron events are strongly suppressed. These results imply that, at low temperatures, electron thermalization and finite conductivity depend on coupling to the phonon bath. The situation is different for samples nearing the metal-insulator transition; in insulating samples that are close to the mobility edge, energy absorption persists to much higher frequencies. Comparing these results with previously studied 2D samples [Ovadyahu, Phys. Rev. Lett. 108, 156602 (2012)] demonstrates that the mean-level spacing (on a single-particle basis) is not the only relevant scale in this problem. The possibility of delocalization by many-body effects and the relevance of a nearby mobility edge (which may be a many-body edge) are discussed.
We study the effects of electron-electron interactions in disordered metals in and close to two dimensions (2D). We consider physical situations in which localization effects are suppressed. The field-theoretical renormalization-group (RG) calculation performed recently by Finkelstein is interpreted and rederived in terms of perturbative results. Surprisingly, except for the density of states, the scaling behavior is independent of the interaction range. We further extend the model to several new universality classes. In the presence of a strong magnetic field the metal is unstable in 2D and undergoes a metal-insulator transition in $d=2+\ensuremath{\epsilon}$. The conductivity exponent, defined by $\ensuremath{\sigma}\ensuremath{\sim}{(n\ensuremath{-}{n}_{c})}^{\ensuremath{\mu}}$, is universal with $\ensuremath{\mu}=1+O(\ensuremath{\epsilon})$ but N(EF)N({E}_{F})N(EF​) depends not only on the range of the interaction but also on its strength for short-ranged interactions. In 2D the conductivity has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}(2\ensuremath{-}2\mathrm{ln}2)\mathrm{ln}(T\ensuremath{\tau})$, ${\ensuremath{\sigma}}_{N}=\frac{{e}^{2}}{2{\ensuremath{\pi}}^{2}\ensuremath{\hbar}}$] if the interaction is Coulombic. If magnetic impurities (or strong spin-orbit scattering with a weak magnetic field) are present instead, the noninteracting fixed point is stable for short-ranged interactions ($\ensuremath{\mu}=\frac{1}{2}$). For the Coulomb interaction the interaction is relevant and drives a metal-insulator transition in $d=2+\ensuremath{\epsilon}$ with universal critical properties ($\ensuremath{\mu}=1$). In 2D the conductivity also has a universal temperature dependence [$\ensuremath{\delta}\ensuremath{\sigma}(T)={\ensuremath{\sigma}}_{N}\mathrm{ln}(T\ensuremath{\tau})$]. We also discuss the behavior of the dielectric constant on the insulator side and the frequency (temperature) dependence of the conductivity at criticality. Remarks are made on the relationship of the above to experiments.
The possibility of using ultracold atoms to observe localization of matter waves is now a subject of significant interest. These systems offer unprecedented control over inter-particle interactions, imposed potentials and the level of disorder as compared to their condensed matter analogues. The two-dimensional (2D) case is of particular interest. The prevailing view has been that in the 2D electron gas there is no metallic state, but recent experiments are suggestive of a metal-insulator transition in very dilute systems. We investigate theoretically the possibility of observing strongly localized states, corresponding to the insulating phase, in the dilute 2D gas.
We observe the emergence of a disorder-induced insulating state in a strongly interacting atomic Fermi gas trapped in an optical lattice. This closed quantum system, free of a thermal reservoir, realizes the disordered Fermi-Hubbard model, which is a minimal model for strongly correlated electronic solids. We observe disorder-induced localization of a metallic state through measurements of mass transport. By varying the lattice potential depth, we detect interaction-driven delocalization of the disordered insulating state. We also measure localization that persists as the temperature of the gas is raised. These behaviors are consistent with many-body localization, which is a novel paradigm for understanding localization in interacting quantum systems at nonzero temperature.