Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2004.00211 · Advanced Quantum Technologies

Implementation of Geometric Quantum Gates on Microwave‐Driven Semiconductor Charge Qubits

Chengxian Zhang, Tao Chen, Xin Wang, Zheng‐Yuan Xue

Published Jun 12, 2021• 8 citations
arXivHTMLPDF

Abstract

Abstract A semiconductor‐based charge qubit, confined in double quantum dots, can be a platform to implement quantum computing. However, it suffers severely from charge noises. Here, a theoretical framework to implement universal geometric quantum gates in this system is provided. It is found that, while the detuning noise can be suppressed by operating near its corresponding sweet spot, the tunneling noise, on the other hand, is amplified and becomes the dominant source of error for single‐qubit gates, a fact previously insufficiently appreciated. It is demonstrated, through numerical simulation, that the geometric gates outperform the dynamical gates across a wide range of tunneling noise levels, making them particularly suitable to be implemented in conjunction with microwave driving. To obtain a nontrivial two‐qubit gate, a hybrid system is introduced with charge qubits coupled by a superconducting resonator. When each charge qubit is in resonance with the resonator, it is possible to construct an entangling geometric gate with fidelity higher than that of the dynamical gate for experimentally relevant noise levels. Therefore, the results suggest that geometric quantum gates are powerful tools to achieve high‐fidelity manipulation for the charge qubit.

DOI
10.1002/qute.202100011

Related papers

Microwave driven geometric quantum computation on semiconductor charge qubits

Chengxian Zhang, Tao Chen, Xin Wang +1 more

The charge qubit based on semiconductor double quantum dots is promising to realize fast and scalable quantum information processing. However, due to its strong coupling to charge noise, experimental realization of two-qubit gates has fidelities below 90%. Here, we provide a theoretical framework to achieve precise gate operations on a charge qubit using geometric quantum phase, namely geometric quantum gates. Single-qubit operations are implemented using the microwave-driven X-Y interacting Hamiltonian near certain sweet spots, where the charge noise is effectively suppressed. Meanwhile, we find that the performance of the geometric gates can be further improved up to 99.86% using composite pulses. In addition, to obtain a nontrivial two-qubit gate, we introduce a hybrid system which consists of charge qubits interacting with a high-impedance superconducting resonator. We find that when the individual charge qubit is in resonance with the resonator, it is possible to construct a SWAP-like gate with fidelity over 97%. Therefore, our results suggest that the geometric quantum gates in combination with the microwave-driven fields are powerful tools to achieve high-fidelity manipulation for the charge qubit.

•Apr 1, 2020•0 citations

High-Fidelity Single-Qubit Gates Via Strongly Driving of a Double Quantum Dot Hybrid Qubit with $1/f$ Charge Noise

Yuan‐Chi Yang, S. N. Coppersmith, Mark G. Friesen

Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of $1/f$ charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve $X_{\pi}$ gates with fidelities higher than $99.9\%$.

•Jun 19, 2019•0 citations

Implementation of high-fidelity geometric singlet-triplet qubits operating near the transverse sweet spot

Wen-Xin Xie, Chengxian Zhang, Zheng‐Yuan Xue

The key to realizing fault-tolerant quantum computation for semiconductor quantum-dot singlet-triplet (ST) qubits is to operate both the single- and two-qubit gates with high fidelity. The feasible way includes operating the qubit near the transverse sweet spot (TSS) to reduce the leading order of the noise, as well as adopting the merit of the global property of the geometric phase. Here, we propose the implementation of the universal geometric gates for the ST qubits in the double quantum dot (DQD). The single-qubit non-cyclic geometric gate which is using the non-cyclic evolution path of the state to obtain the geometric phase can be achieved via introducing the AC-driven detuning operating near the TSS. We perform numerical simulation under the realistic $1/f$ noise environment in DQD. We find that the non-cyclic geometric gate can surpass its dynamical counterpart with a relatively high fidelity of 99.81\%. Meanwhile, we have used the dipole coupling between the DQDs and the cavity resonator which is maximized at the TSS to construct the geometric (holonomic) entangling geometric gate. We have shown that the fidelity for this two-qubit gate can be as high as 99.63\%. Our results suggests that taking advantage of the non-cyclic geometric gates together with using the TSS can be effective to obtain high-fidelity ST qubits.

•Jan 31, 2021•0 citations

High-fidelity single-qubit gates in a strongly driven quantum-dot hybrid qubit with 1/f charge noise

Yuan‐Chi Yang, S. N. Coppersmith, Mark G. Friesen

Semiconductor double quantum-dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of $1/f$ charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve ${X}_{\ensuremath{\pi}}$ gates with fidelities higher than $99.9%$.

arXiv:1906.08303•Physical Review A•Aug 28, 2019•22 citations

Geometric two-qubit gates in silicon-based double quantum dots

Yong-Yang Lu, Kejin Wei, Chengxian Zhang

Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon-based double quantum dots. However, these gates are sensitive to charge noise in experimental settings, which remains a significant challenge. Geometric gates, which utilize pure geometric phases for gate operations, are a promising approach to achieving robust control. In this work, we theoretically propose a feasible strategy to implement geometric two-qubit gates for silicon-based spin qubits considering experimental control environments. By operating in the suitable region where the local magnetic field gradient is significantly larger than the exchange interaction, we can implement both entangling and nonentangling geometric gates through analytical and numerical methods. It is found that the geometric gates obtained are highly compatible with existing experimental techniques using electric dipole spin resonance in silicon. Moreover, the implemented geometric controlled-$Z$ (CZ) gates can achieve fidelities exceeding 99% under experimental noise levels and the gate times are as short as 20 ns. Our work paves the way for the realization of high-fidelity geometric two-qubit gates for spin qubits in silicon.

arXiv:2409.00601•Physical Review A•Apr 10, 2025•7 citations

High-fidelity geometric quantum gates exceeding 99.9% in germanium quantum dots

Yu-Chen Zhou, Rong-Long Ma, Zhenzhen Kong +11 more

Achieving high-fidelity and robust qubit manipulations is a crucial requirement for realizing faulttolerant quantum computation. Here, we demonstrate a single-hole spin qubit in a germanium quantum dot and characterize its control fidelity using gate set tomography. The maximum control fidelities reach 97.48%, 99.81%, 99.88% for the I, X/2 and Y /2 gate, respectively. These results reveal that off-resonance noise during consecutive I gates in gate set tomography sequences severely limits qubit performance. Therefore, we introduce geometric quantum computation to realize noiseresilient qubit manipulation. The geometric gate control fidelities remain above 99% across a wide range of Rabi frequencies. The maximum fidelity surpasses 99.9%. Furthermore, the fidelities of geometric X/2 and Y /2 (I) gates exceed 99% even when detuning the microwave frequency by +-2.5 MHz (+-1.2 MHz), highlighting the noise-resilient feature. These results demonstrate that geometric quantum computation is a potential method for achieving high-fidelity qubit manipulation reproducibly in semiconductor quantum computation.

quant-pharXiv:2609.33251•Nature Communications•Sep 29, 2026•12 citations
Abstract A semiconductor‐based charge qubit, confined in double quantum dots, can be a platform to implement quantum computing. However, it suffers severely from charge noises. Here, a theoretical framework to implement universal geometric quantum gates in this system is provided. It is found that, while the detuning noise can be suppressed by operating near its corresponding sweet spot, the tunneling noise, on the other hand, is amplified and becomes the dominant source of error for single‐qubit gates, a fact previously insufficiently appreciated. It is demonstrated, through numerical simulation, that the geometric gates outperform the dynamical gates across a wide range of tunneling noise levels, making them particularly suitable to be implemented in conjunction with microwave driving. To obtain a nontrivial two‐qubit gate, a hybrid system is introduced with charge qubits coupled by a superconducting resonator. When each charge qubit is in resonance with the resonator, it is possible to construct an entangling geometric gate with fidelity higher than that of the dynamical gate for experimentally relevant noise levels. Therefore, the results suggest that geometric quantum gates are powerful tools to achieve high‐fidelity manipulation for the charge qubit.
The charge qubit based on semiconductor double quantum dots is promising to realize fast and scalable quantum information processing. However, due to its strong coupling to charge noise, experimental realization of two-qubit gates has fidelities below 90%. Here, we provide a theoretical framework to achieve precise gate operations on a charge qubit using geometric quantum phase, namely geometric quantum gates. Single-qubit operations are implemented using the microwave-driven X-Y interacting Hamiltonian near certain sweet spots, where the charge noise is effectively suppressed. Meanwhile, we find that the performance of the geometric gates can be further improved up to 99.86% using composite pulses. In addition, to obtain a nontrivial two-qubit gate, we introduce a hybrid system which consists of charge qubits interacting with a high-impedance superconducting resonator. We find that when the individual charge qubit is in resonance with the resonator, it is possible to construct a SWAP-like gate with fidelity over 97%. Therefore, our results suggest that the geometric quantum gates in combination with the microwave-driven fields are powerful tools to achieve high-fidelity manipulation for the charge qubit.
High-Fidelity Single-Qubit Gates Via Strongly Driving of a Double Quantum Dot Hybrid Qubit with 1/f1/f1/f Charge Noise
Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve XπX_{\pi}Xπ​ gates with fidelities higher than 99.9%99.9\%99.9%.
The key to realizing fault-tolerant quantum computation for semiconductor quantum-dot singlet-triplet (ST) qubits is to operate both the single- and two-qubit gates with high fidelity. The feasible way includes operating the qubit near the transverse sweet spot (TSS) to reduce the leading order of the noise, as well as adopting the merit of the global property of the geometric phase. Here, we propose the implementation of the universal geometric gates for the ST qubits in the double quantum dot (DQD). The single-qubit non-cyclic geometric gate which is using the non-cyclic evolution path of the state to obtain the geometric phase can be achieved via introducing the AC-driven detuning operating near the TSS. We perform numerical simulation under the realistic 1/f1/f1/f noise environment in DQD. We find that the non-cyclic geometric gate can surpass its dynamical counterpart with a relatively high fidelity of 99.81\%. Meanwhile, we have used the dipole coupling between the DQDs and the cavity resonator which is maximized at the TSS to construct the geometric (holonomic) entangling geometric gate. We have shown that the fidelity for this two-qubit gate can be as high as 99.63\%. Our results suggests that taking advantage of the non-cyclic geometric gates together with using the TSS can be effective to obtain high-fidelity ST qubits.
Semiconductor double quantum-dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve ${X}_{\ensuremath{\pi}}$ gates with fidelities higher than 99.999.9%99.9.
Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon-based double quantum dots. However, these gates are sensitive to charge noise in experimental settings, which remains a significant challenge. Geometric gates, which utilize pure geometric phases for gate operations, are a promising approach to achieving robust control. In this work, we theoretically propose a feasible strategy to implement geometric two-qubit gates for silicon-based spin qubits considering experimental control environments. By operating in the suitable region where the local magnetic field gradient is significantly larger than the exchange interaction, we can implement both entangling and nonentangling geometric gates through analytical and numerical methods. It is found that the geometric gates obtained are highly compatible with existing experimental techniques using electric dipole spin resonance in silicon. Moreover, the implemented geometric controlled-ZZZ (CZ) gates can achieve fidelities exceeding 99% under experimental noise levels and the gate times are as short as 20 ns. Our work paves the way for the realization of high-fidelity geometric two-qubit gates for spin qubits in silicon.
Achieving high-fidelity and robust qubit manipulations is a crucial requirement for realizing faulttolerant quantum computation. Here, we demonstrate a single-hole spin qubit in a germanium quantum dot and characterize its control fidelity using gate set tomography. The maximum control fidelities reach 97.48%, 99.81%, 99.88% for the I, X/2 and Y /2 gate, respectively. These results reveal that off-resonance noise during consecutive I gates in gate set tomography sequences severely limits qubit performance. Therefore, we introduce geometric quantum computation to realize noiseresilient qubit manipulation. The geometric gate control fidelities remain above 99% across a wide range of Rabi frequencies. The maximum fidelity surpasses 99.9%. Furthermore, the fidelities of geometric X/2 and Y /2 (I) gates exceed 99% even when detuning the microwave frequency by +-2.5 MHz (+-1.2 MHz), highlighting the noise-resilient feature. These results demonstrate that geometric quantum computation is a potential method for achieving high-fidelity qubit manipulation reproducibly in semiconductor quantum computation.