Superconducting devices are prone to reduced performance caused by impurities and defects along the edges of their wires, which can lead to local current crowding. In this study, we explored the use of helium ion irradiation to modify the lattice structure of the superconducting material to change its intrinsic properties. The process will allow us to directly pattern devices and potentially improve the quality of the nanowires. To achieve this, we used the ion beam from a scanning helium ion microscope (HIM) to localize damage on a superconducting material to create a nanowire. Two experiments were performed in this study. First, a range of helium ion doses was exposed on a niobium nitride (NbN) microwire to determine the estimated dose density to suppress superconductivity. Using the results of this first experiment, nanowires were patterned onto a microwire, and the current-voltage characteristics were measured for each sample. Our results showed that helium ion irradiation is an effective resistless fabrication method for superconducting nanowires.
Superconducting devices are prone to reduced performance caused by impurities and defects along the edges of their wires, which can lead to local current crowding. In this study, we explored the use of helium ion irradiation to modify the lattice structure of the superconducting material to change its intrinsic properties. The process will allow us to directly pattern devices and potentially improve the quality of the nanowires. To achieve this, we used the ion beam from a scanning helium ion microscope (HIM) to localize damage on a superconducting material to create a nanowire. Two experiments were performed in this study. First, a range of helium ion doses was exposed on a niobium nitride (NbN) microwire to determine the estimated dose density to suppress superconductivity. Using the results of this first experiment, nanowires were patterned onto a microwire, and the current-voltage characteristics were measured for each sample. Our results showed that helium ion irradiation is an effective resistless fabrication method for superconducting nanowires.
Superconducting single-photon detectors (SSPDs) are the leading detectors in terms of high-speed single-photon counting and high detection efficiency (DE). One factor that limits the DE is the critical current Ic, which is the maximum current before the superconductor switches to the normal state. Increasing device’s bias current towards the Ic can improve the DE. However, the device’s Ic is reduced due to constriction and current crowding at the edges of the wire. Typically, this is caused by fabrication defects. Locally suppressing superconductivity at these defects can potentially lessen the occurrence of current crowding. In this thesis, we used the beam from the helium ion microscope (HIM) and measured the Ic to observe the effects of locally irradiating specific areas on a SSPD wire. Due to the HIM’s small spot size and high collimation, we can control the superconducting gap precisely at the center and edges of the wire. Suppressing the edges can potentially reduce current crowding and increase the device’s critical current while suppressing the center can improve detection sensitivity for photons incident at that location. Our results showed that the irradiated devices had reduced Ic compared to unirradiated devices for both cases. We then extend this method of local suppression of superconductivity to explore an alternative method of fabricating SSPDs by directly writing the device on the superconducting thin film. This can enable the fabrication of devices without the use of lithography resist. In our experiment, we fabricated a 3 μm wire using optical lithography that was disconnected at the center and connected it by writing a single 1 μm wire with the He+ ion beam. We measured the Ic for samples with and without the 1 μm wire pattern and observed that the Ic decreased as we increased the ion dose. Overall, this work aims to contribute to the continuing investigation of the detection mechanism for SSPDs and the improvement of nanofabrication methods using the HIM.
We demonstrate a direct writing method for the fabrication of planar Josephson junctions from high-quality superconducting niobium titanium nitride (NbTiN) thin films, by creating local disorder using focused He ion beam irradiation. We control the suppression of superconductivity in NbTiN as a function of the helium ion beam fluence, enabling us to successfully fabricate Josephson junctions with highly tunable weak links ranging from the metallic to the insulating phase, utilizing the continuous nature of the disorder-induced superconductor-insulator transition. We demonstrate the successful fabrication of both superconductor-normal metal-superconductor (SNS) and superconductor-insulator-superconductor (SIS) type of devices, and show that we can achieve an exceptionally wide range ( ∼ 5 orders of magnitude) of critical current densities and junction resistances. The SNS-type junctions follow closely the ideal resistively and capacitively shunted junction behavior, have high characteristic voltages up to ∼ 1.5 mV , and show Shapiro steps up to very high orders, while the SIS junctions also follow established theories well. The results suggest that the junctions are suitable for a wide range of applications in superconducting electronics because of the excellent mechanical, electrical, and microwave properties of NbTiN. In particular, as NbTiN has previously been used to fabricate high-quality factor microwave resonators, we see the method as a promising and simple way to realize high-frequency superconducting qubits and other quantum devices using only a single superconducting film.
Abstract Superconducting nanowire single-photon detectors (SNSPDs) offer high system detection efficiency (SDE), low dark counts, and excellent timing resolution, making them indispensable for applications from quantum optics to deep-space optical communications. Although near-unity SDE and intrinsic detection efficiency (IDE) have been achieved at near-infrared wavelengths through advanced fabrication and optical design, further improving IDE at the material and device levels remains essential for achieving broader bandwidths, higher operating temperatures, and simplified processing. Here, we explored helium ion irradiation as a post-fabrication method to modify the thermal properties of NbN SNSPDs without altering their geometry or material stack. With increasing fluence (0–1.1 × 10 17 ions cm −2 ), the thermal boundary conductance decreases by 57% from 127 W m −2 K −4 to 54 W m −2 K −4 , and saturates near 9 × 10 16 ions cm −2 . At this fluence, the minimum hotspot relaxation time increases by 41%, rising from 17 ps to 24 ps, while the electron–phonon interaction time decreases, with the magnitude of change depending on temperature and sample batch. Transmission electron microscopy reveals interfacial disorder near the NbN/SiO₂ interface (6–8 nm) and localized defects in the SiO₂ layer (30–260 nm), correlating with thermal transport suppression. These thermal modifications have a significant impact on relaxation dynamics and contribute to IDE enhancement. Our findings establish ion irradiation as an effective strategy for thermal tuning in SNSPDs, providing new insights into defect engineering for superconducting optoelectronic devices.
Superconducting nanowire single-photon detectors (SNSPDs) with high system detection efficiency (SDE) would enable remarkable experiments in quantum information processing. However, realizing a NbN SNSPD with saturated intrinsic detection efficiency (IDE) that retains high SDE at near-infrared wavelengths is challenging, due to the high critical temperature of NbN. This study uses defect engineering by helium-ion irradiation to enhance the IDE of NbN SNSPDs to saturation without sacrificing SDE. This technique also allows direct comparison of irradiation-induced changes in detector performance, making it a useful tool for studying the physics of superconducting devices.
Superconducting nanowires have been used to detect single photons for more than 20 years. The basic principle is that photons can perturb superconducting Cooper pairs and thereby create a resistive hotspot, which produces a current-crowding effect. This current-crowding effect reduces the superconducting energy gap near the hotspot, which results in the nanowire changing from a superconducting to a normal state near the hotspot. The resulting high impedance causes the current to be squeezed into a high frequency coaxial wire connected in parallel with it, which finally produces a measurable voltage pulse. Thanks to the maturity of current micro- and nano- fabrication techniques, high quality superconducting thin films and nano-wires have been realized in a variety of materials such as NbN, WSi, MoSi and others. These techniques include magnetron sputtering, physical vapor deposition, electron beam lithography, optical lithography, reactive ion etching, wafer cutting, etc. Measurements of superconducting single-photon detectors require cryogenic refrigeration systems, ranging from the initial liquid helium cold tank, to modern dry dilution refrigerators. On one hand, a superconducting device needs to be cooled down below its critical temperature to work. On the other hand, photon-detection events generate hot spots, which release heat to the device substrate, which the refrigerator needs to efficiently take away. Research on superconducting nanowire single-photon detectors (SNSPDs) has made significant advancements over the past two decades, including high detection efficiency, low dark counts, and broad wavelength range capabilities. Beyond improvements in traditional NbN, WSi and MoSi superconducting nanowires, there have been numerous efforts to develop high-temperature superconducting nanowires, such as MgB2 and Bi2Sr2CaCu2O8 (BSCCO), due to the operational limitations imposed by low-temperature superconducting materials. Typically, single-photon detectors require operation temperatures below the critical temperature. High-temperature superconducting nanowire single-photon detectors have currently reported to exhibit the highest operating temperature around 20 K in BSCCO, which is much lower than its critical temperature of 80 K, showing that large-gap superconductors have a comparably low sensitivity to low-energy photons. In recent years since 2018, several groups have reported that micrometer-wide superconducting wires can also be used for single-photon detection, unlike the conventional nanometer-wide superconducting wires. In general, as long as the bias current is uniformly distributed in superconducting wires and approaches the critical Cooper pair-breaking current, the hot spots generated by photon absorption can induce vortices and anti-vortices, and their motion under the action of the Lorentz force generates resistance and voltage, which ultimately produces a normal state region. An increase of the wire width to the micron scale offers more freedom to design new detectors based on current nano- and microfabrication techniques. In this doctoral dissertation, I will first introduce the basic Ginzburg-Landau theory of superconductivity and the measurement theory of superconducting circuits related to single-photon detection. I will then provide a detailed description of the equipment construction and sample fabrication techniques used in the experiment. Finally, I will present my two main studies: in one project I examined the photon-detection performance of superconducting micro-wires with a multi-pinhole structure, the correlation between dark counts and magnetic vortices, as well as the properties of critical current in magnetic fields. In a subsequent study I conducted numerical simulations using the time dependent Ginzburg-Landau equation, to analyze the dynamics of vortices in superconducting micro-strips with regular large-area perforations by pinholes as a function of magnetic field and bias current. The thus obtained predictions were then successfully confirmed in a detailed experimental study on a series of microwires.
YBa2Cu3O7 nano-constriction Josephson junctions and SQUIDs fabricated by focused helium-ion-beam irradiation
By focused 30keV He ion beam irradiation, epitaxially grown YBa2Cu3O7 (YBCO) thin films can be driven from the superconducting to the insulating state with increasing irradiation dose. A properly chosen dose suppresses superconductivity down to 4K, while crystallinity is still preserved. With this approach we create areas of normal-conducting YBCO that can be used to define resistively shunted constriction-type Josephson junctions (cJJs) on the nanometer scale. We also demonstrate that the fabricated cJJs can be incorporated in direct current superconducting quantum interference devices and can be used as detector junctions in THz antennas.