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arXiv:1912.10885 · Physical Review Applied

Mechanical Tunability of an Ultranarrow Spectral Feature of a Rare-Earth-Doped Crystal via Uniaxial Stress

Nicolas Galland, Nemanja Lučić, Bess Fang, S. Zhang, Rodolphe Le Targat, Alban Ferrier, Philippe Goldner, Signe Louise Seidelin, Yann Le Coq

Published Apr 8, 2020• 24 citations
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Abstract

Rare-earth-doped crystals have numerous applications ranging from frequency metrology to quantum information processing. To fully benefit from their exceptional coherence properties, the effect of mechanical strain on the energy levels of the dopants---whether it is a resource or perturbation---needs to be considered. We demonstrate that by applying uniaxial stress to a rare-earth-doped crystal containing a spectral hole, we can shift the hole by a controlled amount that is larger than the width of the hole. We deduce the sensitivity of $\mathrm{Eu}$${}^{3+}$ ions in an $\mathrm{Y}$${}_{2}$$\mathrm{Si}\mathrm{O}$${}_{5}$ matrix as a function of the crystal site and the crystalline axis along which the stress is applied.

DOI
10.1103/physrevapplied.13.044022

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Rare-earth-doped crystals have numerous applications ranging from frequency metrology to quantum information processing. To fully benefit from their exceptional coherence properties, the effect of mechanical strain on the energy levels of the dopants---whether it is a resource or perturbation---needs to be considered. We demonstrate that by applying uniaxial stress to a rare-earth-doped crystal containing a spectral hole, we can shift the hole by a controlled amount that is larger than the width of the hole. We deduce the sensitivity of \mathrm{Eu}$${}^{3+} ions in an \mathrm{Y}$${}_{2}$$\mathrm{Si}\mathrm{O}$${}_{5} matrix as a function of the crystal site and the crystalline axis along which the stress is applied.
Material strain has recently received growing attention as a complementary resource to control the energy levels of quantum emitters embedded inside a solid-state environment.Some rare-earth ion dopants provide an optical transition which simultaneously has a narrow linewidth and is highly sensitive to strain.In such systems, the technique of spectral hole burning, in which a transparent window is burned within the large inhomogeneous profile, allows one to benefit from the narrow features, which are also sensitive to strain, while working with large ensembles of ions.However, working with ensembles may give rise to inhomogeneous responses among different ions.We investigate experimentally how the shape of a narrow spectral hole is modified due to external mechanical strain, in particular, the hole broadening as a function of the geometry of the crystal sites and the crystalline axis along which the stress is applied.Studying these effects is essential in order to optimize the existing applications of rare-earth-doped crystals in fields which already profit from the more-well-established coherence properties of these dopants, such as frequency metrology and quantum information processing, or even suggest alternative applications of these materials, for example, as robust devices for force-sensing or highly sensitive accelerometers.
Material strain has recently received growing attention as a complementary resource to control the energy levels of quantum emitters embedded inside a solid-state environment. Some rare-earth ion dopants provide an optical transition which simultaneously has a narrow linewidth and is highly sensitive to strain. In such systems, the technique of spectral hole burning, in which a transparent window is burned within the large inhomogeneous profile, allows one to benefit from the narrow features, which are also sensitive to strain, while working with large ensembles of ions. However, working with ensembles may give rise to inhomogeneous responses among different ions. We investigate experimentally how the shape of a narrow spectral hole is modified due to external mechanical strain, in particular, the hole broadening as a function of the geometry of the crystal sites and the crystalline axis along which the stress is applied. Studying these effects is essential in order to optimize the existing applications of rare-earth-doped crystals in fields which already profit from the more-well-established coherence properties of these dopants, such as frequency metrology and quantum information processing, or even suggest alternative applications of these materials, for example, as robust devices for force-sensing or highly sensitive accelerometers.Received 24 December 2019Accepted 20 February 2020DOI:https://doi.org/10.1103/PhysRevResearch.2.013306Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.Published by the American Physical SocietyPhysics Subject Headings (PhySH)Research AreasDopantsFine & hyperfine structureOptics & lasersStressPhysical SystemsRare-earth doped crystalsGeneral Physics
By spectrally hole burning an inhomogeneously broadened ensemble of ions while applying a controlled perturbation, one can obtain spectral holes that are functionalized for maximum sensitivity to different perturbations. We propose to use such hole-burned structures for the dispersive optical interaction with rare-earth-ion dopants whose frequencies are sensitive to crystal strain due to the bending motion of a crystal cantilever. A quantitative analysis shows that good optical sensitivity to the bending motion is obtained if a magnetic-field gradient is applied across the crystal during hole burning and that the resulting optomechanical coupling strength is sufficient for observing quantum features such as zero-point vibrations.
We report on the measurement of uniaxial stress sensitivities of the spectral holes in rare earth doped crystal. This provides the necessary information for ab initio calculation of the acceleration sensitivity for a given crystal geometry, and provides the necessary base for optimizing the mounting of the crystal so as to decrease the vibration induced frequency instability. Furthermore, we report on a novel double heterodyne detection scheme which we have shown can be used to decrease the detection noise when locking a laser to the central frequency of a spectral hole, and thereby allows us to obtain a laser with fractional frequency instability of 1.7×10-15@ 1 s.
High-quality rare-earth-ion (REI) doped materials are a prerequisite for many applications such as quantum memories, ultra-high-resolution optical spectrum analyzers and information processing. Compared to bulk materials, REI doped powders offer low-cost fabrication and a greater range of accessible material systems. Here we show that crystal properties, such as nuclear spin lifetime, are strongly affected by mechanical treatment, and that spectral hole burning can serve as a sensitive method to characterize the quality of REI doped powders. We focus on the specific case of thulium doped Y2_22​Al5_55​O12_{12}12​ (Tm:YAG). Different methods for obtaining the powders are compared and the influence of annealing on the spectroscopic quality of powders is investigated. We conclude that annealing can reverse some detrimental effects of powder fabrication and, in certain cases, the properties of the bulk material can be reached. Our results may be applicable to other impurities and other crystals, including color centres in nano-structured diamond.