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arXiv:1910.14000 · Physical Review Applied

Electrostatic Control of Phase Slips in Ti Josephson Nanotransistors

Claudio Puglia, Giorgio De Simoni, Francesco Giazotto

Published May 11, 2020• 38 citations
arXivHTMLPDF

Abstract

The investigation of the switching-current probability distribution of a Josephson junction is a conventional tool to gain information on the dynamics of the phase slips as a function of the temperature. Here we adopt this well-established technique to probe the impact of an external static electric field on the occurrence of phase slips in gated all-metallic titanium (Ti) Josephson weak links. We show, in a temperature range between 20 and 420 mK, that the evolution of the dynamics of the phase slips as a function of the electrostatic field starkly differs from that observed as a function of the temperature. This fact demonstrates, on the one hand, that the electric field suppression of the critical current is not simply related to a conventional thermal-like quasiparticle overheating in the weak-link region. On the other hand, our results may open the way to operate an electrostatic-driven manipulation of phase slips in metallic Josephson nanojunctions, which can be pivotal for the control of decoherence in superconducting nanostructures.

DOI
10.1103/physrevapplied.13.054026

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The investigation of the switching-current probability distribution of a Josephson junction is a conventional tool to gain information on the dynamics of the phase slips as a function of the temperature. Here we adopt this well-established technique to probe the impact of an external static electric field on the occurrence of phase slips in gated all-metallic titanium (Ti) Josephson weak links. We show, in a temperature range between 20 and 420 mK, that the evolution of the dynamics of the phase slips as a function of the electrostatic field starkly differs from that observed as a function of the temperature. This fact demonstrates, on the one hand, that the electric field suppression of the critical current is not simply related to a conventional thermal-like quasiparticle overheating in the weak-link region. On the other hand, our results may open the way to operate an electrostatic-driven manipulation of phase slips in metallic Josephson nanojunctions, which can be pivotal for the control of decoherence in superconducting nanostructures.
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Static electric fields have a negligible influence on the electric and transport properties of a metal because of the screening effect. This belief was extended to conventional metallic superconductors. However, recent experiments have shown that the superconductor properties can be controlled and manipulated by the application of strong electrostatic fields. Here, the authors review the experimental results obtained in the realization of field-effect metallic superconducting devices exploiting this phenomenon. The authors start by presenting the pioneering results on superconducting Bardeen–Cooper–Schrieffer wires and nanoconstriction Josephson junctions (Dayem bridges) made of different materials, such as titanium, aluminum, and vanadium. Then, the authors show the mastering of the Josephson supercurrent in superconductor-normal metal-superconductor proximity transistors, suggesting that the presence of induced superconducting correlations is enough to see this unconventional field-effect. Later, the authors present the control of the interference pattern in a superconducting quantum interference device, indicating the coupling of the electric field with the superconducting phase. The authors conclude this review by discussing some devices that may represent a breakthrough in superconducting quantum and classical computation.
Josephson junctions (JJs) with Josephson energy EJ≲1 K are widely employed as non-linear elements in superconducting circuits for quantum computing operating at milli-Kelvin temperatures. In the qubits with small charging energy EC ( EJ/EC≫1 ), such as the transmon, the incoherent phase slips (IPS) might become the dominant source of dissipation with decreasing EJ. In this work, a systematic study of the IPS in low-EJ JJs at milli-Kelvin temperatures is reported. Strong suppression of the critical (switching) current and a very rapid growth of the zero-bias resistance due to the IPS are observed with decreasing EJ below 1 K. With further improvement of coherence of superconducting qubits, the observed IPS-induced dissipation might limit the performance of qubits based on low-EJ junctions. These results point the way to future improvements of such qubits.
Superconducting quantum devices offer numerous applications, from electrical metrology and magnetic sensing to energy-efficient high-end computing and advanced quantum information processing. The key elements of quantum circuits are (single and double) Josephson junctions controllable either by electric current or magnetic field. The voltage control, commonly used in semiconductor-based devices via the electrostatic field effect, would be far more versatile and practical. Hence, the field effect recently reported in superconducting devices may revolutionise the whole field of superconductor electronics provided it is confirmed. Here we show that the suppression of the critical current attributed to the field effect, can be explained by quasiparticle excitations in the constriction of superconducting devices. Our results demonstrate that a miniscule leakage current between the gate and the constriction of devices perfectly follows the Fowler-Nordheim model of electron field emission from a metal electrode and injects quasiparticles with energies sufficient to weaken or even suppress superconductivity.
Abstract Superconducting quantum devices offer numerous applications, from electrical metrology and magnetic sensing to energy-efficient high-end computing and advanced quantum information processing. The key elements of quantum circuits are (single and double) Josephson junctions controllable either by electric current or magnetic field. The voltage control, commonly used in semiconductor-based devices via the electrostatic field effect, would be far more versatile and practical. Hence, the field effect recently reported in superconducting devices may revolutionise the whole field of superconductor electronics provided it is confirmed. Here we show that the suppression of the critical current attributed to the field effect, can be explained by quasiparticle excitations in the constriction of superconducting devices. Our results demonstrate that a miniscule leakage current between the gate and the constriction of devices perfectly follows the Fowler-Nordheim model of electron field emission from a metal electrode and injects quasiparticles with energies sufficient to weaken or even suppress superconductivity.
Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric-field-induced control of charge-carrier concentration to modulate the channel superconducting properties. Despite the fact that the field-effect is believed to be ineffective for superconducting metals, recent experiments showed electric-field-dependent modulation of the critical current ( I C ) in a fully metallic transistor. However, the grounding mechanism of this phenomenon is not completely understood. Here, we show the experimental realization of Ti-based Dayem bridge field-effect transistors (DB–FETs) able to control the I C of the superconducting channel. Our easy fabrication process for DB–FETs show symmetric full suppression of I C for applied critical gate voltages as low as V G C ≃ ±8 V at temperatures reaching about the 85% of the record critical temperature, T C ≃ 550 mK, for titanium. The gate-independent T C and normal-state resistance ( R N ) coupled with the increase of resistance in the superconducting state ( R S ) for gate voltages close to the critical value ( V G C ) suggest the creation of field-effect induced metallic puddles in the superconducting sea. Our devices show extremely high values of transconductance (| g m MAX | ≃ 15 μA/V at V G ≃ ±6.5 V) and variations of Josephson kinetic inductance ( L K ) with V G of 2 orders of magnitude. Therefore, the DB–FET appears as an ideal candidate for the realization of superconducting electronics, superconducting qubits, and tunable interferometers as well as photon detectors.