Higher-order topological insulators in two spatial dimensions display fractional corner charges. While fractional charges in one dimension are known to be captured by a many-body bulk invariant, computed by the Resta formula, a many-body bulk invariant for higher-order topology and the corresponding fractional corner charges remains elusive despite several attempts. Inspired by recent work by Tada and Oshikawa [arXiv:2302.00800], we propose a well-defined, many-body bulk invariant for
Cn-symmetric higher-order topological insulators that is valid for both noninteracting and interacting systems. Instead of relating them to the bulk quadrupole moment as was previously done, we show that in the presence of
Cn rotational symmetry, this bulk invariant can be directly identified with quantized fractional corner charges. In particular, we prove that the corner charge is quantized as
e/n with
Cn symmetry, leading to a
Zn classification for higher-order topological insulators in two dimensions.
Higher-order topological insulators in two spatial dimensions display fractional corner charges. While fractional charges in one dimension are known to be captured by a many-body bulk invariant, computed by the Resta formula, a many-body bulk invariant for higher-order topology and the corresponding fractional corner charges remains elusive despite several attempts. Inspired by recent work by Tada and Oshikawa, we propose a well-defined many-body bulk invariant for
Cn symmetric higher-order topological insulators, which is valid for both non-interacting and interacting systems. Instead of relating them to the bulk quadrupole moment as was previously done, we show that in the presence of
Cn rotational symmetry, this bulk invariant can be directly identified with quantized fractional corner charges. In particular, we prove that the corner charge is quantized as
e/n with
Cn symmetry, leading to a
Zn classification for higher-order topological insulators in two dimensions.
We study higher order topology in the presence of strong interactions in a two-dimensional, experimentally accessible superlattice Bose-Hubbard model with alternating hoppings and strong on-site repulsion. We evaluate the phase diagram of the model around half-filling using the density renormalization group ansatz and find two gapped phases separated by a gapless superfluid region. We demonstrate that the gapped states realize two distinct higher order symmetry protected topological phases, which are protected by a combination of charge conservation and
C4 lattice symmetry. The phases are distinguished in terms of a many-body topological invariant and a quantized, experimentally accessible fractional corner charge that is robust against arbitrary, symmetry preserving edge manipulations. We support our claims by numerically studying the full counting statistics of the corner charge, finding a sharp distribution peaked around the quantized values. Our results allow for a direct comparison with experiments and represent a confirmation of theoretically predicted higher order topology in a strongly interacting system. Experimentally, the fractional corner charge can be observed in ultracold atomic settings using state of the art quantum gas microscopy.
We study the single-particle entanglement spectrum in 2D topological insulators which possess
n-fold rotation symmetry. By defining a series of special choices of subsystems on which the entanglement is calculated, or real space cuts, we find that the number of protected in-gap states for each type of these real space cuts is a quantum number indexing (if any) nontrivial topology in these insulators. We explicitly show that the number of protected in-gap states is determined by a
Zn index
(z1,...,zn), where
zm is the number of occupied states that transform according to
mth one-dimensional representation of the
Cn point group. We find that for a space cut separating
1/pth of the system, the entanglement spectrum contains in-gap states pinned in an interval of entanglement eigenvalues $[1/p,1\ensuremath{-}1/p]$. We determine the number of such in-gap states for an exhaustive variety of cuts, in terms of the
Zn index. Furthermore, we show that in a homogeneous system, the
Zn index can be determined through an evaluation of the eigenvalues of point-group symmetry operators at all high-symmetry points in the Brillouin zone. When disordered
n-fold rotationally symmetric systems are considered, we find that the number of protected in-gap states is identical to that in the clean limit as long as the disorder preserves the underlying point-group symmetry and does not close the bulk insulating gap.
Robust fractional charge localized at disclination defects has recently been found as a topological response in
C6-symmetric 2D topological crystalline insulators (TCIs). In this article, we thoroughly investigate the fractional charge on disclinations in
Cn-symmetric TCIs, with or without time-reversal symmetry, and including spinless and spin-
21 cases. We compute the fractional disclination charges from the Wannier representations in real space and use band representation theory to construct topological indices of the fractional disclination charge for all 2D TCIs that admit a (generalized) Wannier representation. We find the disclination charge is fractionalized in units of
ne for
Cn-symmetric TCIs, and for spin-
21 TCIs, with additional time-reversal symmetry, the disclination charge is fractionalized in units of
n2e. We furthermore prove that with electron-electron interactions that preserve the
Cn symmetry and many-body bulk gap, though we can deform a TCI into another which is topologically distinct in the free fermion case, the fractional disclination charge determined by our topological indices will not change in this process. Moreover, we use an algebraic technique to generalize the indices for TCIs with nonzero Chern numbers, where a Wannier representation is not applicable. With the inclusion of the Chern number, our generalized fractional disclination indices apply for all
Cn-symmetric TCIs. Finally, we briefly discuss the connection between the Chern number dependence of our generalized indices and the Wen-Zee term.
Two-dimensional higher-order topological insulators can display a number of exotic phenomena, such as half-integer charges localized at both corners and disclination defects. In this paper, we analyze these phenomena, focusing on the paradigmatic example of the quadrupole insulator with
C4 rotation symmetry, and present a topological field theory description of the mixed geometry-charge responses. Our theory provides a unified description of the corner and disclination charges in terms of a physical geometry (which encodes disclinations), and an effective geometry (which encodes corners). We extend this analysis to interacting systems, and predict the response of fractional quadrupole insulators, which exhibit charge
e/2(2k+1) bound to corners and disclinations.