We leverage the Keldysh formalism to extend our implementation of finite temperature coupled cluster theory [ J. Chem. Theory Comput. 2018, 14, 5690–5700] to thermal systems that have been driven out of equilibrium. The resulting Keldysh coupled cluster theory is discussed in detail. We describe the implementation of the equations necessary to perform Keldysh coupled cluster singles and doubles calculations of finite-temperature dynamics, and we apply the method to some simple systems including a Hubbard model with a Peierls phase and an ab initio model of warm-dense silicon subject to an ultrafast XUV pulse.
We leverage the Keldysh formalism to extend our implementation of finite temperature coupled cluster theory [ J. Chem. Theory Comput. 2018, 14, 5690–5700] to thermal systems that have been driven out of equilibrium. The resulting Keldysh coupled cluster theory is discussed in detail. We describe the implementation of the equations necessary to perform Keldysh coupled cluster singles and doubles calculations of finite-temperature dynamics, and we apply the method to some simple systems including a Hubbard model with a Peierls phase and an ab initio model of warm-dense silicon subject to an ultrafast XUV pulse.
We extend the finite-temperature Keldysh non-equilibrium coupled cluster theory (Keldysh-CC) [A. F. White and G. K.-L. Chan, J. Chem. Theory Comput. 15, 6137–6253 (2019)] to include a time-dependent orbital basis. When chosen to minimize the action, such a basis restores local and global conservation laws (Ehrenfest’s theorem) for all one-particle properties while remaining energy conserving for time-independent Hamiltonians. We present the time-dependent Keldysh orbital-optimized coupled cluster doubles method in analogy with the formalism for zero-temperature dynamics, extended to finite temperatures through the time-dependent action on the Keldysh contour. To demonstrate the conservation property and understand the numerical performance of the method, we apply it to several problems of non-equilibrium finite-temperature dynamics: a 1D Hubbard model with a time-dependent Peierls phase, laser driving of molecular H2, driven dynamics in warm-dense silicon, and transport in the single impurity Anderson model.
We present a time-dependent formulation of coupled cluster theory. This theory allows for direct computation of the free energy of quantum systems at finite temperature by imaginary time integration and is closely related to the thermal cluster cumulant theory of Mukherjee and co-workers [ Chem. Phys. Lett. 1992 , 192 , 55 -61 ; Phys. Rev. E 1993 , 48 , 3373 -3389 ; Chem. Phys. Lett. 2001 , 335 , 281 -288 ; Chem. Phys. Lett. 2002 , 352 , 63 -69 ; Int. J. Mod. Phys. B 2003 , 17 , 5367 -5377 ]. Our derivation of the finite-temperature theory highlights connections to perturbation theory and to zero-temperature coupled cluster theory. We show explicitly how the finite-temperature coupled cluster singles and doubles amplitude equations can be derived in analogy with the zero-temperature theory and how response properties can be efficiently computed using a variational Lagrangian. We discuss the implementation for realistic systems and showcase the potential utility of the method with calculations of the exchange correlation energy of the uniform electron gas under warm dense matter conditions.
We extend the coupled-cluster method to correlated quantum dynamics of both closed and open systems at finite temperatures using the thermofield formalism. The approach expresses the time-dependent density matrix in an exponential ansatz and describes time-evolution along the Keldysh path contour. A distinct advantage of the approach is exact trace-preservation as a function of time, ensuring conservation of probability and particle number. Furthermore, the method avoids the computation of correlated bra-states, simplifying the computational implementation. We develop the method in a thermal quasiparticle representation, which allows seamless connection to the projection method and diagrammatic techniques of the traditional coupled-cluster formalism. For comparison, we also apply the thermofield framework to the density-matrix renormalization-group method to obtain reference results for closed and open systems at finite temperature. We test the singles and doubles approximation to the density-matrix coupled-cluster method on the correlated electronic dynamics of the single-impurity Anderson model, demonstrating that the new method successfully captures the correlated dynamics of both closed systems at finite temperature and driven-dissipative open systems. This encouraging performance motivates future applications to nonequilibrium quantum many-body dynamics in realistic systems.
We discuss the theory and implementation of the finite temperature coupled cluster singles and doubles (FT-CCSD) method including the equations necessary for an efficient implementation of response properties. Numerical aspects of the method including the truncation of the orbital space and integration of the amplitude equations are tested on some simple systems, and we provide some guidelines for applying the method in practice. The method is then applied to the 1D Hubbard model, the uniform electron gas (UEG) at warm, dense conditions, and some simple materials. The performance of model systems at high temperatures is encouraging: for the one-dimensional Hubbard model, FT-CCSD provides a qualitatively accurate description of finite-temperature correlation effects even at U = 8, and it allows for the computation of systematically improvable exchange-correlation energies of the warm, dense UEG over a wide range of conditions. We highlight the obstacles that remain in using the method for realistic ab initio calculations on materials.
We present a coupled cluster and linear response theory to compute properties of many-electron systems at nonzero temperatures. For this purpose, we make use of the thermofield dynamics, which allows for a compact wave function representation of the thermal density matrix, and extend our recently developed framework ( J. Chem. Phys. 2019, 150, 154109, DOI: 10.1063/1.5089560 ) to parametrize the so-called thermal state using an exponential ansatz with cluster operators that create thermal quasiparticle excitations on a mean-field reference. As benchmark examples, we apply this method to both model (one-dimensional Hubbard and Pairing) and ab initio (atomic Beryllium and molecular Hydrogen) systems, while comparing with exact results.
At zero temperature, coupled cluster theories are widely used to predict total energies, ground state expectation values, and even excited states for molecules and extended systems. However, for systems with a small band gap, such as metals, the zero-temperature approximation does not necessarily hold. Thermal effects may even give rise to interesting chemistry on metal surfaces. Most approaches to temperature dependent electronic properties employ finite temperature perturbation theory in the Matsubara frequency formulation. Computations require a large number of Matsubara frequencies to yield sufficiently accurate results, especially at low temperatures. This work, and independently the work of White and Chan J. Chem. Theory Comput. 2018 , DOI: 10.1021/acs.jctc.8b00773 , proposes a coupled cluster implementation directly in the imaginary time domain on the compact interval [0, β], closely related to the thermal cluster cumulant approach of Sanyal et al. [ Chem. Phys. Lett. 1992 , 192 , 55 - 61 ] , Sanyal et al. [ Phys. Rev. E 1993 , 48 , 3373 - 3389 ], and Mandal et al. [ Int. J. Mod. Phys. B 2003 , 17 , 5367 - 5377 ]. Here, the arising imaginary time dependent coupled cluster amplitude integral equations are solved in the linearized direct ring doubles approximation, also referred to as Tamm-Dancoff approximation with second order (linearized) screened exchange. In this framework, the transition from finite to zero temperature is uniform and comes at no extra costs, allowing to go to temperatures as low as room temperature. In this approximation, correlation grand potentials are calculated over a wide range of temperatures for solid lithium, a metallic system, and for solid silicon, a semiconductor.