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arXiv:1906.05214 · Superconductor Science and Technology

Nanowire single-photon detectors made of atomic layer-deposited niobium nitride

E Knehr, A Kuzmin, D Yu Vodolazov, M Ziegler, S Doerner, K Ilin, M Siegel, R Stolz, H Schmidt

Published Sep 27, 2019• 22 citations
arXivHTMLPDF

Abstract

Abstract We demonstrate and characterize superconducting nanowire single-photon detectors made from atomic layer-deposited (ALD) NbN layers. To assess the suitability of these films as a detector material, transport properties of bare films and bridges of different dimensions and thicknesses are investigated. Similar ratios of the measured critical current to the depairing current are obtained for micro-bridges made from ALD and sputtered NbN films. Furthermore, we characterized the single-photon response for 5 and 10 nm thick nanowire detectors. A 100 nm wide straight nanowire with a length of 5 μ m exhibits saturated count rate dependencies on bias current and a cut-off wavelength in the near-infrared range. The ALD technique could open up the possibility to fabricate NbN-based detectors on the wafer scale and to conformally cover also non-planar surfaces for novel device concepts.

DOI
10.1088/1361-6668/ab48d7

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Abstract We demonstrate and characterize superconducting nanowire single-photon detectors made from atomic layer-deposited (ALD) NbN layers. To assess the suitability of these films as a detector material, transport properties of bare films and bridges of different dimensions and thicknesses are investigated. Similar ratios of the measured critical current to the depairing current are obtained for micro-bridges made from ALD and sputtered NbN films. Furthermore, we characterized the single-photon response for 5 and 10 nm thick nanowire detectors. A 100 nm wide straight nanowire with a length of 5 μ m exhibits saturated count rate dependencies on bias current and a cut-off wavelength in the near-infrared range. The ALD technique could open up the possibility to fabricate NbN-based detectors on the wafer scale and to conformally cover also non-planar surfaces for novel device concepts.
High-quality ultrathin films of niobium nitride (NbN) are developed by the plasma-enhanced atomic layer deposition (PEALD) technique. Superconducting nanowire single-photon detectors patterned from this material exhibit high switching currents and saturated internal efficiencies over a broad bias range at a telecommunication wavelength of 1550 nm. Statistical analyses on hundreds of fabricated devices show a near-unity throughput yield due to the exceptional homogeneity of the films. The ALD-NbN material represents an ideal superconducting material for fabricating large single-photon detector arrays combining high efficiency, low jitter, and low dark counts.
Abstract The advancement of superconducting nanowire single-photon detectors (SNSPDs or SSPDs) is intrinsically linked to breakthroughs in superconducting materials engineering. These detectors are prized for their excellent sensitivity and performance across a wide wavelength range, from ultra-violet to mid-infrared (mid-IR). Plasma-enhanced atomic layer deposition (ALD) is an advanced deposition technique that enables exceptional film uniformity across large wafers, making it ideal for a variety of applications. In this study, ALD NbTiN films are fabricated into SNSPDs that exhibit single-photon response across near- to mid-IR wavelengths. A 5 nm thick NbTiN film was patterned into devices consisting of ∼100 nm wide meandered nanowires, and the nanowire cross-section and composition were analysed by transmission electron microscopy. The devices were tested in a closed-cycle cryostat with a base temperature of 0.9 K. Photon detection rate and timing jitter were measured across the wavelength range 1.5–4.4 µ m under low dark count conditions, confirming single-photon sensitivity across the measured wavelength bands. This work introduces the ALD-grown NbTiN films as a new platform for SNSPD detectors, achieving mid-IR single-photon sensitivity. The intact film quality after fabrication demonstrates the potential of ALD processes for scalable infrared detector technologies.
We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3-20 nm deposited onto GaAs substrates with an AlN buffer layer demonstrate a higher critical temperature, critical current density, and lower residual resistivity in comparison to films deposited onto bare substrates. Unfortunately, the thermal coupling of the NbN film to the substrate weakens. SNSPDs made of 4.9-nm-thick NbN films on buffered substrates (in comparison to detectors made from NbN films on bare GaAs) demonstrate three orders of magnitude lower dark count rates and about ten times higher detection efficiency at 900 nm being measured at 90% of the critical current. The system timing jitter of SNSPDs on buffered substrates is 72 ps, which is 36 ps lower than those on bare substrate. However, a weaker thermal coupling of NbN nanowire to the buffered substrate leads to a latching effect at bias currents > 0.97 IC.
Superconducting nanowire single photon detectors (SNSPD) offer excellent performance for infrared single photon detection, combining high efficiency, low timing jitter, low dark count rates and high photon counting rates. Promising application areas for SNSPDs include quantum key distribution, space-to-ground communications and single photon remote sensing [1]. SNSPDs are typically made with ultrathin niobium nitride (NbN) films with thickness 4 nm and a superconducting transition temperature above 9 K. NbN offers high performance in the near infrared but their sensitivity drops at wavelengths beyond 2 um. There is growing interest in potential photon counting applications in the mid infrared domain (for example remote sensing of greenhouse gases in the atmosphere [2]). One way to overcome the wavelength limit in NbN SNSPDs is to use films with a lower superconducting energy gap [3]. Here we report on the study of SNSPDs fabricated with thin films of titanium nitride (TiN). We compare TiN films deposited by atomic layer deposition (ALD) and by magnetron sputtering. The TiN films range in thickness from 5 to 60 nm, with superconducting transition temperatures from ~1 K to 3.5 K. We have analyzed the films via transmission electron microscopy and variable angle spectroscopic ellipsometry. We characterize TiN SNSPDs performance from near to mid-infrared at wavelengths (1-4 um) with fast optical parametric oscillator (OPO) source. We compare the performance of TiN SNSPDs to devices based on other lower gap materials: MoSi, NbTiN, WSi. [1] Natarajan et al Superconductor Science and Technology 25 063001 (2012) [2] Abshire et al Laser Applications to Chemical, Security and Environmental Analysis, (Optical Society of America, 2008) paper LMA4 [3] Verma et al Applied Physics Letters 105 022602 (2014)
Niobium nitride (NbN) is widely used in the production of superconducting nanowire single-photon detectors (SNSPDs) due to its high superconducting transition temperature and suitable energy gap. The processing parameters used for the preparation of NbN films and the subsequent processing of nanowires have a significant effect on the performance of the SNSPD. In this review, we will present various thin film growth methods, including magnetron sputtering, atomic layer deposition (ALD), and chemical vapor deposition (CVD). The relationships between the superconducting performance of each thin film and the corresponding deposition process will be discussed. Subsequently, NbN nanowire fabrication methods and microstructures based on thin film etching will be summarized, and their impact on the qualities of the finished SNSPDs will be systematically analyzed. Finally, we will provide an outlook for the future development of preparation for SNSPD.