Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:1903.04679 · Scientific Reports

Superfluid-Insulator Transition unambiguously detected by entanglement in one-dimensional disordered superfluids

G. A. Canella, V. V. França

Published Oct 25, 2019• 12 citations
arXivHTMLPDF

Abstract

Abstract We use entanglement to track the superfluid-insulator transition (SIT) in disordered fermionic superfluids described by the one-dimensional Hubbard model. Entanglement is found to have remarkable signatures of the SIT driven by i) the disorder strength V, ii) the concentration of impurities C and iii) the particle density n. Our results reveal the absence of a critical potential intensity on the SIT driven by V, i.e. any small V suffices to decrease considerably the degree of entanglement: it drops ∼50% for V = −0.25t. We also find that entanglement is non-monotonic with the concentration C, approaching to zero for a certain critical value CC. This critical concentration is found to be related to a special type of localization, here named as fully-localized state, which can be also reached for a particular density nC. Our results show that the SIT driven by n or C has distinct nature whether it leads to the full localization or to the ordinary one: it is a first-order quantum phase transition only when leading to full localization. In contrast, the SIT driven by V is never a first-order quantum phase transition independently on the type of localization reached.

DOI
10.1038/s41598-019-51986-0

Related papers

Work statistics and Entanglement across the fermionic superfluid-insulator transition

Krissia Zawadzki, G. A. Canella, V. V. França +1 more

Entanglement in many-body systems may display interesting signatures of quantum phase transitions and similar properties are starting to be encountered in the analysis of work fluctuations. Here, we consider the fermionic superfluid-to-insulator transition (SIT) and relate its entanglement properties with its work distribution statistics. The SIT is modeled by the attractive fermionic Hubbard model in the presence of randomly distributed impurities. The work distribution is calculated across two quench protocols, both triggering the SIT. In the first, the concentration of impurities is increased; in the second, the impurities' disorder strength is varied. Our results indicate that, the critical state that induces minimization of the entanglement also maximizes the average work. We demonstrate that, for this state, density fluctuations vanish at all orders, hence all central moments of the work probability distribution are exactly zero at criticality. For systems undergoing a precursor to the transition (short chains with finite impurity potential) numerical results confirm these predictions, with higher moments further from the ideal result. For both protocols, at criticality, the system absorbs the most energy with almost no penalty in terms of fluctuations: ultimately this feature could be used to implement a quantum critical battery. The effects of temperature on these signatures of critical behaviour are also investigated and shown to favor work extraction for high enough temperatures.

arXiv:2307.13059•Jul 24, 2023•0 citations

Work Statistics and Entanglement Across the Fermionic Superfluid‐Insulator Transition

Krissia Zawadzki, G. A. Canella, V. V. França +1 more

Abstract Entanglement in many‐body systems may display quantum phase transition signatures, and analogous insights are emerging in the study of work fluctuations. Here, the fermionic superfluid‐to‐insulator transition (SIT) is considered and related to its entanglement properties and its work distribution statistics. Using the attractive fermionic Hubbard model with randomly distributed impurities, the work distribution is analyzed under two quench protocols triggering the SIT. In the first, the concentration of impurities is increased; in the second, the impurities' disorder strength is varied. The results indicate that, at criticality, the entanglement is minimized while the average work is maximized. This study demonstrates that, for this state, density fluctuations vanish at all orders, resulting in all central moments of the work probability distribution being precisely zero. For systems undergoing a precursor to the transition (short chains with finite impurity potential) numerical results confirm these predictions, with higher moments further from the ideal results. For both protocols, at criticality, the system absorbs the most energy with almost no penalty in terms of fluctuations: ultimately this feature can be used to implement a quantum critical battery. The impact of temperature on this critical behaviour is also investigated and shown to favor work extraction for high enough temperatures.

Advanced Quantum Technologies•Jan 20, 2024•5 citations

Critical exponents of the disorder-driven superfluid-insulator transition in one-dimensional Bose-Einstein condensates

J. C. C. Cestari, Angela Foerster, M. A. Gusmão +1 more

We investigate the nature of the superfluid-insulator quantum phase transition driven by disorder for noninteracting ultracold atoms on one-dimensional lattices. We consider two different cases: Anderson-type disorder, with local energies randomly distributed, and pseudodisorder due to a potential incommensurate with the lattice, which is usually called the Aubry-Andr\'e model. A scaling analysis of numerical data for the superfluid fraction for different lattice sizes allows us to determine quantum critical exponents characterizing the disorder-driven superfluid-insulator transition. We also briefly discuss the effect of interactions close to the noninteracting quantum critical point of the Aubry-Andr\'e model.

arXiv:1111.3666•Physical Review A•Nov 7, 2011•24 citations

Superfluid-insulator transition and fermion pairing in Bose-Fermi mixtures

Kun Yang

It is well known that bosons on an optical lattice undergo a second-order superfluid-insulator transition (SIT) when the lattice potential increases. In this paper, we study SIT when fermions coexist with the bosons. We find that the critical properties of particle-hole symmetric SIT with dynamical exponent $z=1$ is modified when fermions are present; it either becomes a fluctuation-driven first-order transition or a different second-order transition. On the other hand, the more generic particle-hole asymmetric (with $z=2$) SIT is stable against coupling with fermions. We also discuss pairing interaction between fermions mediated by quantum critical fluctuations near SIT and show that the fermion pairing and/or superfluid transition temperature peaks near SIT when a single species of fermion is present.

arXiv:0707.4189•Physical Review B•Feb 19, 2008•11 citations

Superfluid-insulator transition of disordered bosons in one dimension

Ehud Altman, Yariv Kafri, Anatoli Polkovnikov +1 more

We study the superfluid-insulator transition in a one-dimensional system of interacting bosons, modeled as a disordered Josephson array, using a strong-randomness real-space renormalization-group technique. Unlike perturbative methods, this approach does not suffer from run-away flows and allows us to study the complete phase diagram. We show that the superfluid-insulator transition is always Kosterlitz-Thouless like in the way that length and time scales diverge at the critical point. Interestingly however, we find that the transition at strong disorder occurs at a nonuniversal value of the Luttinger parameter, which depends on the disorder strength. This result places the transition in a universality class different from the weak disorder transition first analyzed by Giamarchi and Schulz [Europhys. Lett. 3, 1287 (1987)]. While the details of the disorder potential are unimportant at the critical point, the type of disorder does influence the properties of the insulating phases. We find three classes of insulators which arise for different classes of disorder potential. For disorder only in the charging energies and Josephson coupling constants, at integer filling we find an incompressible but gapless Mott-glass phase. If both integer and half-integer filling factors are allowed then the corresponding phase is a random-singlet insulator, which has a divergent compressibility. Finally in a generic disorder potential the insulator is a Bose glass with a finite compressibility.

arXiv:0909.4096•Physical Review B•May 25, 2010•81 citations

Absence of a Direct Superfluid to Mott Insulator Transition in Disordered Bose Systems

Lode Pollet, Nikolay V. Prokof'ev, Boris V. Svistunov +1 more

We prove the absence of a direct quantum phase transition between a superfluid and a Mott insulator in a bosonic system with generic, bounded disorder. We also prove the compressibility of the system on the superfluid-insulator critical line and in its neighborhood. These conclusions follow from a general theorem of inclusions, which states that for any transition in a disordered system, one can always find rare regions of the competing phase on either side of the transition line. Quantum Monte Carlo simulations for the disordered Bose-Hubbard model show an even stronger result, important for the nature of the Mott insulator to Bose glass phase transition: the critical disorder bound Delta(c) corresponding to the onset of disorder-induced superfluidity, satisfies the relation Delta(c)>Eg/2, with Eg/2 the half-width of the Mott gap in the pure system.

arXiv:0903.3867•Physical Review Letters•Sep 28, 2009•142 citations
Abstract We use entanglement to track the superfluid-insulator transition (SIT) in disordered fermionic superfluids described by the one-dimensional Hubbard model. Entanglement is found to have remarkable signatures of the SIT driven by i) the disorder strength V, ii) the concentration of impurities C and iii) the particle density n. Our results reveal the absence of a critical potential intensity on the SIT driven by V, i.e. any small V suffices to decrease considerably the degree of entanglement: it drops ∼50% for V = −0.25t. We also find that entanglement is non-monotonic with the concentration C, approaching to zero for a certain critical value CC. This critical concentration is found to be related to a special type of localization, here named as fully-localized state, which can be also reached for a particular density nC. Our results show that the SIT driven by n or C has distinct nature whether it leads to the full localization or to the ordinary one: it is a first-order quantum phase transition only when leading to full localization. In contrast, the SIT driven by V is never a first-order quantum phase transition independently on the type of localization reached.
Entanglement in many-body systems may display interesting signatures of quantum phase transitions and similar properties are starting to be encountered in the analysis of work fluctuations. Here, we consider the fermionic superfluid-to-insulator transition (SIT) and relate its entanglement properties with its work distribution statistics. The SIT is modeled by the attractive fermionic Hubbard model in the presence of randomly distributed impurities. The work distribution is calculated across two quench protocols, both triggering the SIT. In the first, the concentration of impurities is increased; in the second, the impurities' disorder strength is varied. Our results indicate that, the critical state that induces minimization of the entanglement also maximizes the average work. We demonstrate that, for this state, density fluctuations vanish at all orders, hence all central moments of the work probability distribution are exactly zero at criticality. For systems undergoing a precursor to the transition (short chains with finite impurity potential) numerical results confirm these predictions, with higher moments further from the ideal result. For both protocols, at criticality, the system absorbs the most energy with almost no penalty in terms of fluctuations: ultimately this feature could be used to implement a quantum critical battery. The effects of temperature on these signatures of critical behaviour are also investigated and shown to favor work extraction for high enough temperatures.
Abstract Entanglement in many‐body systems may display quantum phase transition signatures, and analogous insights are emerging in the study of work fluctuations. Here, the fermionic superfluid‐to‐insulator transition (SIT) is considered and related to its entanglement properties and its work distribution statistics. Using the attractive fermionic Hubbard model with randomly distributed impurities, the work distribution is analyzed under two quench protocols triggering the SIT. In the first, the concentration of impurities is increased; in the second, the impurities' disorder strength is varied. The results indicate that, at criticality, the entanglement is minimized while the average work is maximized. This study demonstrates that, for this state, density fluctuations vanish at all orders, resulting in all central moments of the work probability distribution being precisely zero. For systems undergoing a precursor to the transition (short chains with finite impurity potential) numerical results confirm these predictions, with higher moments further from the ideal results. For both protocols, at criticality, the system absorbs the most energy with almost no penalty in terms of fluctuations: ultimately this feature can be used to implement a quantum critical battery. The impact of temperature on this critical behaviour is also investigated and shown to favor work extraction for high enough temperatures.
We investigate the nature of the superfluid-insulator quantum phase transition driven by disorder for noninteracting ultracold atoms on one-dimensional lattices. We consider two different cases: Anderson-type disorder, with local energies randomly distributed, and pseudodisorder due to a potential incommensurate with the lattice, which is usually called the Aubry-Andr\'e model. A scaling analysis of numerical data for the superfluid fraction for different lattice sizes allows us to determine quantum critical exponents characterizing the disorder-driven superfluid-insulator transition. We also briefly discuss the effect of interactions close to the noninteracting quantum critical point of the Aubry-Andr\'e model.
It is well known that bosons on an optical lattice undergo a second-order superfluid-insulator transition (SIT) when the lattice potential increases. In this paper, we study SIT when fermions coexist with the bosons. We find that the critical properties of particle-hole symmetric SIT with dynamical exponent z=1z=1z=1 is modified when fermions are present; it either becomes a fluctuation-driven first-order transition or a different second-order transition. On the other hand, the more generic particle-hole asymmetric (with z=2z=2z=2) SIT is stable against coupling with fermions. We also discuss pairing interaction between fermions mediated by quantum critical fluctuations near SIT and show that the fermion pairing and/or superfluid transition temperature peaks near SIT when a single species of fermion is present.
We study the superfluid-insulator transition in a one-dimensional system of interacting bosons, modeled as a disordered Josephson array, using a strong-randomness real-space renormalization-group technique. Unlike perturbative methods, this approach does not suffer from run-away flows and allows us to study the complete phase diagram. We show that the superfluid-insulator transition is always Kosterlitz-Thouless like in the way that length and time scales diverge at the critical point. Interestingly however, we find that the transition at strong disorder occurs at a nonuniversal value of the Luttinger parameter, which depends on the disorder strength. This result places the transition in a universality class different from the weak disorder transition first analyzed by Giamarchi and Schulz [Europhys. Lett. 3, 1287 (1987)]. While the details of the disorder potential are unimportant at the critical point, the type of disorder does influence the properties of the insulating phases. We find three classes of insulators which arise for different classes of disorder potential. For disorder only in the charging energies and Josephson coupling constants, at integer filling we find an incompressible but gapless Mott-glass phase. If both integer and half-integer filling factors are allowed then the corresponding phase is a random-singlet insulator, which has a divergent compressibility. Finally in a generic disorder potential the insulator is a Bose glass with a finite compressibility.
We prove the absence of a direct quantum phase transition between a superfluid and a Mott insulator in a bosonic system with generic, bounded disorder. We also prove the compressibility of the system on the superfluid-insulator critical line and in its neighborhood. These conclusions follow from a general theorem of inclusions, which states that for any transition in a disordered system, one can always find rare regions of the competing phase on either side of the transition line. Quantum Monte Carlo simulations for the disordered Bose-Hubbard model show an even stronger result, important for the nature of the Mott insulator to Bose glass phase transition: the critical disorder bound Delta(c) corresponding to the onset of disorder-induced superfluidity, satisfies the relation Delta(c)>Eg/2, with Eg/2 the half-width of the Mott gap in the pure system.