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arXiv:1810.04208 · Physical Review A

Stroboscopically robust gates for capacitively coupled singlet-triplet qubits

Ralph Kenneth Colmenar, J. P. Kestner

Published Jan 30, 2019• 2 citations
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Abstract

Recent work on Ising-coupled double-quantum-dot spin qubits in GaAs with voltage-controlled exchange interaction has shown improved two-qubit gate fidelities from the application of oscillating exchange along with a strong magnetic field gradient between adjacent dots [npj Quantum Inf. 3, 3 (2017)]. By examining how noise propagates in the time-evolution operator of the system, we find an optimal set of parameters that provide passive stroboscopic circumvention of errors in two-qubit gates to first order. We predict over 99% two-qubit gate fidelities in the presence of quasistatic and $1/f$ noise, which is an order-of-magnitude improvement over the typical unoptimized implementation.

DOI
10.1103/physreva.99.012347

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Recent work on Ising-coupled double-quantum-dot spin qubits in GaAs with voltage-controlled exchange interaction has shown improved two-qubit gate fidelities from the application of oscillating exchange along with a strong magnetic field gradient between adjacent dots [npj Quantum Inf. 3, 3 (2017)]. By examining how noise propagates in the time-evolution operator of the system, we find an optimal set of parameters that provide passive stroboscopic circumvention of errors in two-qubit gates to first order. We predict over 99% two-qubit gate fidelities in the presence of quasistatic and 1/f1/f1/f noise, which is an order-of-magnitude improvement over the typical unoptimized implementation.
Singlet-triplet qubits in lateral quantum dots in semiconductor heterostructures exhibit high-fidelity single-qubit gates via exchange interactions and magnetic field gradients. High-fidelity two-qubit entangling gates are challenging to generate since weak interqubit interactions result in slow gates that accumulate error in the presence of noise. However, the interqubit electrostatic interaction also produces a shift in the local double well detunings, effectively changing the dependence of exchange on the gate voltages. We consider an operating point where the effective exchange is first-order insensitive to charge fluctuations while maintaining nonzero interactions. This ``sweet spot'' exists only in the presence of interactions. We show that working at the interacting sweet spot can directly produce maximally entangling gates, and we simulate the gate evolution under realistic 1/f1/f1/f noise. We report theoretical two-qubit gate fidelities above 99% in GaAs and Si systems.
We present a scheme for correcting for crosstalk- and noise-induced errors in exchange-coupled singlet-triplet semiconductor double quantum dot qubits. While exchange coupling allows the coupling strength to be controlled independently of the intraqubit exchange couplings, there is also the problem of leakage, which must be addressed. We show that, if a large magnetic field difference is present between the two qubits, leakage is suppressed. We then develop pulse sequences that correct for crosstalk- and noise-induced errors and present parameters describing them for the 24 Clifford gates. We determine the infidelity for both the uncorrected and corrected gates as a function of the error-inducing terms and show that our corrected pulse sequences reduce the error by several orders of magnitude.
We investigate a method for entangling two singlet-triplet qubits in adjacent double quantum dots via capacitive interactions. In contrast to prior work, here we focus on a regime with strong interactions between the qubits. The interplay of the interaction energy and simultaneous large detunings for both double dots gives rise to the ``double charge resonant'' regime, in which the unpolarized (1111) and fully polarized (0202) four-electron states in the absence of interqubit tunneling are near degeneracy, while being energetically well separated from the partially polarized (0211 and 1102) states. A rapid controlled-phase gate may be realized by combining time evolution in this regime in the presence of intraqubit tunneling and the interqubit Coulomb interaction with refocusing $\ensuremath{\pi}$ pulses that swap the singly occupied singlet and triplet states of the two qubits via, e.g., magnetic gradients. We calculate the fidelity of this entangling gate, incorporating models for two types of noise---charge fluctuations in the single-qubit detunings and charge relaxation within the low-energy subspace via electron-phonon interaction---and identify parameter regimes that optimize the fidelity. The rates of phonon-induced decay for pairs of GaAs or Si double quantum dots vary with the sizes of the dipolar and quadrupolar contributions and are several orders of magnitude smaller for Si, leading to high theoretical gate fidelities for coupled singlet-triplet qubits in Si dots. We also consider the dependence of the capacitive coupling on the relative orientation of the double dots and find that a linear geometry provides the fastest potential gate.
Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been demonstrated in several types of spin qubits, the existence of one for coupled singlet-triplet qubits is unclear. We theoretically demonstrate, using full configuration-interaction calculations, that a range of nearly sweet spots appears in the coupled singlet-triplet qubit system when a strong enough magnetic field is applied externally. We further demonstrate that ramping to and from the judiciously chosen nearly sweet spot using sequences based on the shortcut to adiabaticity offers maximal gate fidelities under charge noise and phonon-induced decoherence. These results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.
In order to enable semiconductor-based quantum computing with many qubits, issues like residual interqubit coupling and constraints from scalable control hardware need to be tackled to retain the high gate fidelities demonstrated in current single-qubit devices. Here we focus on two exchange-coupled singlet-triplet spin qubits, considering realistic control hardware as well as Coulomb and exchange coupling that cannot be fully turned off. Using measured noise spectra, we optimize realistic control pulses and show that two-qubit (single-qubit) gate fidelities of 99.90% ($\ensuremath{\ge}99.69%$) can be reached in GaAs, while 99.99% ($\ensuremath{\ge}99.95%$) can be achieved in Si.
The search for a sweet spot, the locus in qubit parameters where quantum control is first-order insensitive to noises, is key to achieve high-fidelity quantum gates. Efforts to search for such a sweet spot in conventional double-quantum-dot singlet-triplet qubits where each dot hosts one electron (``two-electron singlet-triplet qubit''), especially for two-qubit operations, have been unsuccessful. Here we consider singlet-triplet qubits allowing each dot to host more than one electron, with a total of four electrons in the double quantum dots (``four-electron singlet-triplet qubit''). We theoretically demonstrate, using configuration interaction calculations, that sweet spots appear in this coupled qubit system. We further demonstrate that, under realistic charge noise and hyperfine noise, a two-qubit operation at the proposed sweet spot could offer gate fidelities ($\ensuremath{\sim}99%$) that are higher than the conventional two-electron singlet-triplet qubit system ($\ensuremath{\sim}90%$). Our results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.