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arXiv:1809.05624 · Physical Review A

Electric-field noise from thermally activated fluctuators in a surface ion trap

Crystal Noel, Maya Berlin-Udi, Clemens Matthiesen, Jessica Yu, Yi Zhou, Vincenzo Lordi, Hartmut Häffner

Published Jun 26, 2019• 41 citations
arXivHTMLPDF

Abstract

We probe electric-field noise near the metal surface of an ion-trap chip in the temperature range from 295 to 530 K. We observe a nontrivial temperature dependence with the noise amplitude at 1 MHz frequency saturating around 500 K. Measurements of the noise spectrum reveal a $1/{f}^{\ensuremath{\alpha}\ensuremath{\approx}1}$ dependence and a small decrease in $\ensuremath{\alpha}$ between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally activated two-level fluctuators with activation energies between 0.35 and 0.65 eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example, defect motion in the solid state and surface adsorbate binding energies. The study of these processes may aid in identification of the origin of excess electric-field noise in ion traps---a major source of ion motional decoherence limiting the performance of surface traps as quantum devices.

DOI
10.1103/physreva.99.063427

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We probe electric-field noise near the metal surface of an ion-trap chip in the temperature range from 295 to 530 K. We observe a nontrivial temperature dependence with the noise amplitude at 1 MHz frequency saturating around 500 K. Measurements of the noise spectrum reveal a 1/f\ensuremathα\ensuremath≈11/{f}^{\ensuremath{\alpha}\ensuremath{\approx}1}1/f\ensuremathα\ensuremath≈1 dependence and a small decrease in \ensuremathα\ensuremath{\alpha}\ensuremathα between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally activated two-level fluctuators with activation energies between 0.35 and 0.65 eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example, defect motion in the solid state and surface adsorbate binding energies. The study of these processes may aid in identification of the origin of excess electric-field noise in ion traps---a major source of ion motional decoherence limiting the performance of surface traps as quantum devices.
Electric-field noise is a major limiting factor in the performance of ion traps and other quantum devices. Despite intensive research over the past decade, the nature and cause of electric field noise near surfaces is not well understood. This dissertation reports the high- temperature dependence of electric-field noise above an Al-Cu surface using a trapped 40Ca+ ion as a probe.We employ a novel setup with a surface ion trap mounted on a heater for studies of the temperature dependence of electric-field noise. To characterize the Al-Cu material, we explore the effects of heat treatment through ex situ annealing followed by inspection in a scanning electron microscope. To calibrate the temperature of the trap, we demonstrate the use of thermal imaging for monitoring the temperature of an ion trap in vacuum.The temperature and frequency dependence of electric-field noise above the surface is measured using the heating rate of a single ion in a surface-electrode Paul trap. We find that the heating rate saturates at temperatures greater than 450 K. We find that the frequency dependence shows a 1/f behavior, and has a lower frequency scaling exponent at high temperatures than at room temperature. We show that these results are a reflection of the surface-related noise by eliminating other possible sources of noise.Building on historical data for resistance fluctuations in thin films, we develop the thermally-activated fluctuator model to describe the results. We find that a broad distribution of fluctuators with energy barriers peaked around 0.5 eV accurately models both the temperature and frequency dependence of the electric-field noise measured. We present the interpretation of this model as a way to infer that the cause of electric-field noise in the trap is likely defect motion in the metal surface, connecting the problems faced in ion trapping to a large body of work in solid state physics.
Motional heating of ions in microfabricated traps is one of the open challenges hindering experimental realizations of large-scale quantum processing devices. Recently, a series of measurements of the heating rates in surface-electrode ion traps characterized their frequency, distance, and temperature dependencies, but our understanding of the microscopic origin of this noise remains incomplete. In this work we develop a theoretical model for the electric field noise which is associated with a random distribution of adsorbed atoms on the trap electrode surface. By using first-principles calculations of the fluctuating dipole moments of the adsorbed atoms we evaluate the distance, frequency, and temperature dependence of the resulting electric field fluctuation spectrum. Our theory reproduces correctly the ${d}^{\ensuremath{-}4}$ dependence with distance of the ion from the electrode surface and calculates the noise spectrum beyond the standard scenario of two-level fluctuators by incorporating all the relevant vibrational states. Our model predicts a regime of 1/f1/f1/f noise which commences at roughly the frequency of the fundamental phonon transition rate and a thermally activated noise spectrum which for higher temperatures exhibits a crossover as a function of frequency.
Ion traps are promising architectures for implementing quantum computers, but they suffer from excessive ``anomalous'' ion motional heating that limit their overall coherence and practicality for scalable quantum computing. The exact microscopic origins of anomalous heating remain an open question, but experiments point to adsorbates on trap electrodes as one likely source. Many different models of anomalous heating have been proposed, but these models have yet to pinpoint the atomistic origin of the experimentally observed $1/\ensuremath{\omega}$ electric-field noise scaling seen in ion traps at frequencies between 0.1--10 MHz. In this work, we show that a model based on previously proposed surface-induced dipole fluctuations on adsorbates, but which also incorporates interparticle interaction dynamics through molecular dynamics simulations of up to multiple monolayers of adsorbates, gives rise to $1/\ensuremath{\omega}$ frequency scaling at the MHz frequencies typically employed in ion traps. These results demonstrate that moderate-to-high densities of adsorbates can give rise to a set of activated motions that produce the $1/\ensuremath{\omega}$ noise observed in ion traps and that collective adsorbate motions produce the observed noise spectra that a noninteracting model does not capture.
Electric field noise from fluctuating patch potentials is a significant problem for a broad range of precision experiments, including trapped ion quantum computation and single spin detection. Recent results demonstrated strong suppression of this noise by cryogenic cooling, suggesting an underlying thermal process. We present measurements characterizing the temperature and frequency dependence of the noise from 7 to 100 K, using a single Sr+ ion trapped 75 mum above the surface of a gold plated surface electrode ion trap. The noise amplitude is observed to have an approximate 1/f spectrum around 1 MHz, and grows rapidly with temperature as T;{beta} for beta from 2 to 4. The data are consistent with microfabricated cantilever measurements of noncontact friction but do not extrapolate to the dc measurements with neutral atoms or contact potential probes.
Electric field noise produced by the surface of ion trap electrodes reduces the fidelity of quantum computing operations. Despite decades of investigation its microscopic origins remain unclear.This thesis investigates the origins of surface electric field noise by examining its dependence on trap temperature. A set of Al-Cu surface Paul traps are fabricated together and sent to MIT Lincoln Labs (MITLL) and the University of California, Berkeley (UCB). MITLL measures noise from 7 K to room temperature above a first trap and UCB measures noise from room temperature to 590 K above a second trap. The noise measurements from the two experiments are combined to study the noise dependence over the full temperature range from 7-590 K. This is the largest temperature range ever studied using a single trap design and connects the temperature ranges used in all previous studies.We find qualitatively different behaviors at low and high temperatures: from 7-430 K we find that the noise follows the same power-law scaling reported in previous cryogenic studies. At temperatures from 430-590 K, we find that the noise increases much more rapidly than predicted by the power-law scaling. We note a particularly sharp rise in noise at 560 K, which is similar to the sharp rise in noise reported in a previous high-temperature study of a different Al-Cu trap. To determine which physical processes are associated with the change in noise at elevated trap temperatures, we investigate how the material state of the trap electrodes changes when they are heated. We find that the primary physical process associated with the change in noise at high temperature is thermally-activated atom diffusion within the films.This thesis also investigates if the surface structure of room-temperature Au ion traps affects noise levels. We use a heat treatment to restructure the surface of the traps and measure the resulting change in noise. We find that the heat treatment leads to significant changes to the surface structure but causes only a modest change to noise levels. This indicates that the heat-induced changes to the surface do not strongly affect noise. We also note that the noise magnitude observed above these Au traps is state-of-the-art for room-temperature, untreated surface ion traps. This noise level can be explained by modeling the contamination that exists on the trap surface as a dielectric with a loss tangent of tan θ ≈ 0.01.Finally, this thesis investigates the origin of elevated noise levels in one region of a Au surface ion trap. We find that micron-sized particles are located where noise levels are highest, indicating that these particles are likely responsible for the noise. We can explain the magnitude, frequency, and distance dependence of the noise if we treat the particles as a lossy dielectric with a loss tangent tan θ ≈ 0.3.
Ion traps are promising architectures for implementing scalable quantum computing, but they suffer from excessive "anomalous" heating that prevents their full potential from being realized. This heating, which is orders of magnitude larger than that expected from Johnson-Nyquist noise, results in ion motion that leads to decoherence and reduced fidelity in quantum logic gates. The exact origin of anomalous heating is an open question, but experiments point to adsorbates on trap electrodes as a likely source. Many different models of anomalous heating have been proposed, but these models have yet to pinpoint the atomistic origin of the experimentally-observed 1/ω1/ω1/ω electric field noise scaling observed in ion traps at frequencies between 0.1-10 MHz. In this work, we perform the first computational study of the ion trap electric field noise produced by the motions of multiple monolayers of adsorbates described by first principles potentials. In so doing, we show that correlated adsorbate motions play a definitive role in producing 1/ω1/ω1/ω noise and identify candidate collective adsorbate motions, including translational and rotational motions of adsorbate patches and multilayer exchanges, that give rise to 1/ω1/ω1/ω scaling at the MHz frequencies typically employed in ion traps. These results demonstrate that multi-adsorbate systems, even simple ones, can give rise to a set of activated motions that can produce the 1/ω1/ω1/ω noise observed in ion traps and that collective, rather than individual, adsorbate motions are much more likely to give rise to low-frequency heating.