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arXiv:1807.09143 · Applied Physics Letters

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

M. Syperek, Łukasz Dusanowski, Michał Gawełczyk, Grzegorz Sek, A. Somers, Johann Peter Reithmaier, Sven Höfling, J. Misiewicz

Published Nov 7, 2016• 11 citations
arXivHTMLPDF

Abstract

Exciton spin and related optical polarization in self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pumping conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pumping scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, can lead to the polarization degree above 50%. We discuss the role of intrinsic asymmetries in the quantum dash that influence values of the degree of polarization and its time evolution.

DOI
10.1063/1.4966997

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Exciton spin and related optical polarization in self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pumping conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pumping scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, can lead to the polarization degree above 50%. We discuss the role of intrinsic asymmetries in the quantum dash that influence values of the degree of polarization and its time evolution.
We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm at the elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that the charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as the non-classical light emitters for long-distance fiber-based secure communication technologies.
We report quantum beat phenomena between different polarization states in InAs quantum dots, observed in time-resolved photoluminescence and transient dichroism measurements. The polarization of the emitted light can be changed from linear to circular by applying a small magnetic field. Following quasiresonant excitation the electron and hole spin states remain stable during the exciton lifetime, independent of the applied magnetic field. We show that the exciton spin coherence is partially preserved in the energy relaxation process. These experiments enable us to measure the anisotropic exchange energy $\ensuremath{\Delta}{E}_{XY}$ and the exciton ggg factor. We find $\ensuremath{\Delta}{E}_{XY}\ensuremath{\simeq}30\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{eV}$ and $g\ensuremath{\simeq}2.5$ for the quantum dot excitons.
We investigate charged and neutral exciton complexes confined in a single self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm. The emission characteristics have been probed by measuring high-spatial-resolution polarization-resolved photoluminescence and cross-correlations of photon emission statistics at T = 5 K. The photon auto-correlation histogram of the emission from both the neutral and charged exciton indicates a clear antibunching dip with as-measured g(2)(0) values of 0.18 and 0.31, respectively. It proves that these exciton complexes confined in single quantum dashes of InP-based material system can act as true single photon emitters being compatible with standard long-distance fiber communication technology.
We investigate the coherent exciton spin dynamics in a single InAlAs/AlGaAs quantum dot using time-resolved quantum state tomography. Under two-LO-phonon quasi-resonant excitation of neutral exciton, we observe pronounced quantum beats in the circular and diagonal polarization components, reflecting the fine-structure splitting (Δ≈19.6 μeVΔ\approx 19.6 \ μ\text{eV}Δ≈19.6 μeV). By employing a global fitting procedure across three orthogonal polarization bases, we demonstrate that the spin evolution is consistently described by a unified Hamiltonian dominated by the anisotropic exchange interaction. While the initial degree of circular polarization is limited to ≈0.28\approx 0.28≈0.28 due to fast relaxation processes during carrier cooling, the subsequent dynamics reveal a long-lived spin coherence (1.1±0.21.1 \pm 0.21.1±0.2 ns) that exceeds the exciton lifetime (∼767\sim 767∼767 ps). Our analysis reveals that the spin-formation time is significantly shorter than the instrument response function, and the absence of a discernible Overhauser shift confirms a negligible influence from the local nuclear environment under the present conditions. These results provide a quantitative benchmark for the three-dimensional reconstruction of spin trajectories using differential polarization signals, demonstrating the feasibility of using quasi-resonant excitation for stable spin initialization in semiconductor nanostructures.
The three-dimensional confinement created by the ultrasmall semiconductor structures known as quantum dots greatly modifies the optical properties of the spatially localized carriers. These systems are presently of great interest to the research community, both for the improved understanding of the physics of confined structures, and for the potential applications of these systems to areas such as optoelectronics and quantum computing. Here, the techniques of transient coherent nonlinear optical spectroscopy are applied to the investigation of excitons confined within InAs/GaAs self-assembled quantum dots. These methods provide a powerful tool for the study of dynamic processes in these novel materials. The nonlinear measurements are based on the differential transmission experimental geometry, and utilize ultrafast pulsed lasers in order to temporally resolve the carrier dynamics after excitation. The experiments performed here are resonant with the ground state absorption of the quantum dots, as evidenced by comparison with the photoluminescence measurements which are used to characterize the sample. The incoherent relaxation dynamics of the population of photoexcited excitons are examined, allowing for a determination of both the lifetime of the excitons and the time scale for relaxation between the two polarization eigenstates of the system. The three-dimensional quantum confinement results in the suppression of these relaxation processes, as predicted. The use of coherent spectroscopic techniques allows for the first unambiguous demonstration of an optically-induced nonradiative Raman coherence in these quantum dots. Simultaneous excitation of both polarization states of the exciton results in a coherent superposition state, whose temporal evolution is observed through the homodyne-detection scheme. In these transient experiments, this is manifested as a beating in the nonlinear response, which allows us to directly measure the fine-structure splitting between the polarization states. Utilizing optical pulse shaping techniques, transient spectral hole burning is performed, which allows for the nonlinear response to be spectrally resolved. As expected for the strongly confined quantum dot excitons, the results show that diffusion among the localized states is not a significant effect. Temperature dependent measurements show that at elevated temperatures, extra dephasing processes, potentially related to acoustic phonon scattering, become important. Finally, this technique allows for the first direct observation of the induced absorption from the exciton to biexciton transition in these InAs quantum dots, and a measurement of the associated binding energy. These results lay the foundation for future studies in this material system, and for the possible development of quantum logic devices utilizing quantum dots.
By using nonlinear resonant optical control and polarized photoluminescence, the authors studied the intensity dependence of exciton spin relaxation and photoluminescence polarization in single self-assembled InGaAs quantum dots. Data from dots with different dipole moments reveal two distinctive channels for polarization memory loss: (i) an external pathway due to carrier escape and capture to and from the wetting layer that is responsible for memory loss increasing with intensity and (ii) an internal loss channel due to intrinsic spin relaxation. The values obtained rule out a universal freezing of exciton spin relaxation in single self-assembled quantum dots related to the wetting layer.