We propose a quantum-circuit refrigerator (QCR) based on photon-assisted quasiparticle tunneling through a single normal-metal–insulator–superconductor (NIS) junction. In contrast to previous studies with multiple junctions and an additional charge island for the QCR, we directly connect the NIS junction to an inductively shunted electrode of a superconducting microwave resonator making the device immune to low-frequency charge noise. At low characteristic impedance of the resonator and parameters relevant to a recent experiment, we observe that a semiclassical impedance model of the NIS junction reproduces the bias voltage dependence of the QCR-induced damping rate and frequency shift. For high characteristic impedances, we derive a Born–Markov master equation and use it to observe significant non-linearities in the QCR-induced dissipation and frequency shift. We further demonstrate that, in this regime, the QCR can be used to initialize the linear resonator into a non-thermal state even in the absence of any microwave drive.
Previous studies of photon-assisted tunneling through normal-metal–insulator–superconductor junctions have exhibited potential for providing a convenient tool to control the dissipation of quantum-electric circuits in situ. However, the current literature on such a quantum-circuit refrigerator (QCR) does not present a detailed description for the charge dynamics of the tunneling processes or the phase coherence of the open quantum system. Here, we derive a master equation describing both quantum-electric and charge degrees of freedom, and discover that typical experimental parameters of low temperature and yet lower charging energy yield a separation of time scales for the charge and quantum dynamics. Consequently, the minor effect of the different charge states can be taken into account by averaging over the charge distribution. We also consider applying an ac voltage to the tunnel junction, which enables control of the decay rate of a superconducting qubit over four orders of magnitude by changing the drive amplitude; we find an order-of-magnitude drop in the qubit excitation in 40 ns and a residual reset infidelity below 10−4. Furthermore, for the normal island, we consider the case of charging energy and single-particle level spacing large compared to the superconducting gap, i.e., a quantum dot. Although the decay rates arising from such a dot QCR appear low for use in qubit reset, the device can provide effective negative damping (gain) to the coupled microwave resonator. The Fano factor of such a millikelvin microwave source may be smaller than unity, with the latter value being reached close to the maximum attainable power.
We have made the first direct measurement of the quantum susceptance that arises from the nondissipative part of quasiparticle tunneling in a superconductor-insulator-superconductor tunnel junction. The junction is coupled to an antenna and a superconducting microstrip stub to form a resonator; the resonant frequency is determined from the response of the junction to broadband radiation from a Fourier-transform spectrometer. A 19% shift of the resonant frequency, from 73 to 87 GHz, is observed, which arises from the change of the quantum susceptance of the junction with dc bias voltage. This shift is in excellent agreement with calculations based on the Werthamer-Tucker theory, which includes the quantum susceptance. We also demonstrate that it is essential to include the quantum susceptance in our theoretical computation to explain the photon-assisted-tunneling steps, which have negative dynamic conductance. Such steps are observed when the junction is pumped at slightly below the resonant frequency of the capacitor and the stub. The quantum susceptance should exist in all tunnel devices whose nonlinear I-V characteristics are due to elastic tunneling.
The properties of phase escape in a dc superconducting quantum interference device (SQUID) at 25 mK, which is well below quantum-to-classical crossover temperature
Tcr, in the presence of strong resonant ac driving have been investigated. The SQUID contains two
Nb/Al-AlOx/Nb tunnel junctions with Josephson inductance much larger than the loop inductance so it can be viewed as a single junction having adjustable critical current. We find that with increasing microwave power
W and at certain frequencies $\ensuremath{\nu}$ and $\ensuremath{\nu}/2$, the single primary peak in the switching current distribution, which is the result of macroscopic quantum tunneling of the phase across the junction, first shifts toward lower bias current
I and then a resonant peak develops. These results are explained by quantum resonant phase escape involving single and two photons with microwave-suppressed potential barrier. As
W further increases, the primary peak gradually disappears and the resonant peak grows into a single one while shifting further to lower
I. At certain
W, a second resonant peak appears, which can locate at very low
I depending on the value of $\ensuremath{\nu}$. Analysis based on the classical equation of motion shows that such resonant peak can arise from the resonant escape of the phase particle with extremely large oscillation amplitude resulting from bifurcation of the nonlinear system. Our experimental result and theoretical analysis demonstrate that at
T⪡Tcr, escape of the phase particle could be dominated by classical process, such as dynamical bifurcation of nonlinear systems under strong ac driving.
We experimentally study nanoscale normal-metal-insulator-superconductor junctions coupled to a superconducting microwave resonator. We observe that bias-voltage-controllable single-electron tunneling through the junctions gives rise to a direct conversion between the electrostatic energy and that of microwave photons. The measured power spectral density of the microwave radiation emitted by the resonator exceeds at high bias voltages that of an equivalent single-mode radiation source at 2.5 K although the phonon and electron reservoirs are at subkelvin temperatures. Measurements of the generated power quantitatively agree with a theoretical model in a wide range of bias voltages. Thus, we have developed a microwave source which is compatible with low-temperature electronics and offers convenient in-situ electrical control of the incoherent photon emission rate with a predetermined frequency, without relying on intrinsic voltage fluctuations of heated normal-metal components or suffering from unwanted losses in room temperature cables. Importantly, our observation of negative generated power at relatively low bias voltages provides a novel type of verification of the working principles of the recently discovered quantum-circuit refrigerator.
We experimentally realize an incoherent microwave source driven by voltage-controlled quantum tunneling of electrons through nanoscale normal-metal--insulator--superconductor junctions coupled to a resonator. We observe the direct conversion of the electronic energy into microwave photons by measuring the power spectrum of the microwave radiation emitted from the resonator. The demonstrated total output power exceeds that of 2.5-K thermal radiation although the photon and electron reservoirs are at subkelvin temperatures. Measurements of the output power quantitatively agree with a theoretical model in a wide range of the bias voltages providing information on the electrically-controlled photon creation. The developed photon source is fully compatible with low-temperature electronics and offers convenient in-situ electrical control of the photon emission rate with a predetermined frequency, without relying on intrinsic voltage fluctuations of heated normal-metal components nor suffering from unwanted dissipation in room temperature cables. In addition to its potential applications in microwave photonics, our results provide complementary verification of the working principles of the recently discovered quantum-circuit refrigerator.