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arXiv:1709.06952 · Nature

Fast quantum logic gates with trapped-ion qubits

Vera M. Schäfer, Christopher J. Ballance, K. Thirumalai, L. J. Stephenson, T. G. Ballance, Andrew M. Steane, D. M. Lucas

Published Feb 27, 2018• 275 citations
arXivHTMLPDF
DOI
10.1038/nature25737

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Microwave-driven quantum logic gates in trapped-ion systems offer a scalable and laser-free alternative to optical control, with the potential for robust integration into surface-electrode trap architectures. In this work, we present a systematic design guideline for planar ion traps optimized for fast two-qubit microwave gates using chip-integrated conductors. We investigate two electrode configurations, one employing a single microwave line for driving σ transitions, and another with two symmetric lines for π transitions. Through finite-element simulations, we analyze ion height, magnetic field gradients, heating effects, and gate durations under realistic cryogenic conditions. Our results show that both configurations can achieve two-qubit gate times in the order of 10 μs for Be+9 and Ca+40 ions.