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arXiv:1708.04523 · Science Advances

Room temperature solid-state quantum emitters in the telecom range

Yu Zhou, Ziyu Wang, Abdullah Rasmita, Sejeong Kim, Amanuel M. Berhane, Zoltán Bodrog, Giorgio Adamo, Ádám Gali, Igor Aharonovich, Weibo Gao

Published Mar 2, 2018• 157 citations
arXivHTMLPDF

Abstract

On-demand, single-photon emitters (SPEs) play a key role across a broad range of quantum technologies. In quantum networks and quantum key distribution protocols, where photons are used as flying qubits, telecom wavelength operation is preferred because of the reduced fiber loss. However, despite the tremendous efforts to develop various triggered SPE platforms, a robust source of triggered SPEs operating at room temperature and the telecom wavelength is still missing. We report a triggered, optically stable, room temperature solid-state SPE operating at telecom wavelengths. The emitters exhibit high photon purity (~5% multiphoton events) and a record-high brightness of ~1.5 MHz. The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high-performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.

DOI
10.1126/sciadv.aar3580

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On-demand, single-photon emitters (SPEs) play a key role across a broad range of quantum technologies. In quantum networks and quantum key distribution protocols, where photons are used as flying qubits, telecom wavelength operation is preferred because of the reduced fiber loss. However, despite the tremendous efforts to develop various triggered SPE platforms, a robust source of triggered SPEs operating at room temperature and the telecom wavelength is still missing. We report a triggered, optically stable, room temperature solid-state SPE operating at telecom wavelengths. The emitters exhibit high photon purity (~5% multiphoton events) and a record-high brightness of ~1.5 MHz. The emission is attributed to localized defects in a gallium nitride (GaN) crystal. The high-performance SPEs embedded in a technologically mature semiconductor are promising for on-chip quantum simulators and practical quantum communication technologies.
Single photon sources are essential building blocks for fundamental quantum optics, and quantum information networks. Their widespread use is currently hindered by impractical features, such as the need for operation at cryogenic temperatures and emission wavelengths lying outside telecom windows. Taking advantage of telecom technology and point defects in GaN crystals, we present, for the first time, the development of a fully-fibered source of single photons operating at room temperature, emitting photons in the telecom O-band and fulfilling the standards of telecom photonics. We characterise an emitter producting single photons at the wavelength of 1292 nm, a spectral broadening compatible with CWDM channels of 13 nm, and a brightness of 25 kcps per mW of pump power. The source shows a signal-to-noise ratio of 16.5 and a purity g(2)(0) = (5.9 ± 0.5) × 10−2 at room temperature, showing high potential for being integrated transportable quantum cryptography devices.
Single-photon sources are essential building blocks for for all aspects of quantum information technologies and more specifically for quantum communications. However, their widespread adoption is hindered by impractical constraints, such as cryogenic operation and emission wavelengths outside telecom windows. Leveraging telecom technology and point defects in GaN crystals, we present the first fully fibre-integrated single photon source operating at room temperature in the telecom O-band, meeting telecom photonics standards. We characterise an emitter producing single photons at 1292 nm, with a spectral broadening of 13 nm and a brightness of 25 kcps per mW of pump power and a purity of g(2)(0) = (5.9±0.5)×10−2at room temperature, demonstrating strong potential for integration into transportable quantum cryptography devices.
Single photons are the key ingredient for many photonic quantum technologies including quantum key distribution and measurement-based quantum computing. However, it remains difficult to create devices with the appropriate specifications for use in non-laboratory environments. The optical microcavity platform provides an attractive route towards a room temperature single photon source device. Our ultra-small focused ion beam (FIB) milled open-access cavities offer enhancement of the spontaneous emission rate, tunability of the emission spectrum and increased light collection. The embedment of solid-state emitters within these cavities enables us to create a robust room temperature single photon source device, with the potential for high efficiencies and single photon purities. Defects such as the nitrogen-vacancy (NV) centre in diamond have been shown to be stable room-temperature sources of single photons. There are new single emitters emerging in two-dimensional materials such as hexagonal boron nitride (hBN). Here we present developments in room-temperature coupling of single defects to open-access microcavities of a planar-hemispherical geometry with mode volumes down to λ3. We report enhancements in the spectral density of photons into a single cavity mode, combined with improved single photon purities. It will be shown that the NV-cavity system provides a ~3% single photon emission efficiency with purities of up to 94%. The hBN-cavity system provides count rates >1Mcts/s into a single cavity mode with purities up to 96%. With these high single photon purities, such devices would be robust against photon number splitting attacks making them attractive for applications in quantum cryptography.
High Resolution Image Download MS PowerPoint Slide A key resource in quantum-secured communication protocols are single photon emitters. For long-haul optical networks, it is imperative to use photons at wavelengths compatible with telecom single mode fibers. We demonstrate high purity single photon emission at 1.31 μm using deterministically positioned InP photonic waveguide nanowires containing single InAsP quantum dot-in-a-rod structures. At excitation rates that saturate the emission, we obtain a single photon collection efficiency at first lens of 27.6% and a probability of multiphoton emission of g (2) (0) = 0.021. We have also evaluated the performance of the source as a function of temperature. Multiphoton emission probability increases with temperature with values of 0.11, 0.34, and 0.57 at 77, 220 and 300 K, respectively, which is attributed to an overlap of temperature-broadened excitonic emission lines. These results are a promising step toward scalably fabricating telecom single photon emitters that operate under relaxed cooling requirements.
Abstract Single photon sources are key components for quantum technologies such as quantum communication, computing and metrology. A key challenge towards the realization of global quantum networks are transmission losses in optical fibers. Therefore, single photon sources are required to emit at the low-loss telecom wavelength bands. However, an ideal telecom wavelength single photon source has yet to be discovered. Here, we review the recent progress in realizing such sources. We start with single photon emission based on atomic ensembles and spontaneous parametric down conversion, and then focus on solid-state emitters including semiconductor quantum dots, defects in silicon carbide and carbon nanotubes. In conclusion, some state-of-the-art applications are highlighted.
Single-photon sources (SPSs) are directly applicable in quantum key distribution (QKD) because they allow the implementation of the canonical BB84 protocol. To date, QKD implementations using SPSs are not widespread because of the need for cryogenic operation, or frequency conversion to a wavelength efficiently transmitted over telecommunication fibers. We report an observation of polarization-encoded QKD using a room-temperature telecom SPS based on a GaN defect. A field test over 3.5 km of deployed fiber with 4.0-dB loss yielded a quantum bit error rate (QBER) of 5.0% and a secure key rate of 585.9 bps. Further testing in a 32.5-km fiber spool (attenuation of 11.2 dB), which exhibited substantially lower polarization mode dispersion, yielded a QBER of 3.2% and a secure key rate of 50.4 bps. These results illustrate the potential of the GaN defects for supporting polarization-encoded quantum communication.