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arXiv:1706.02877 · Physical Review A

Pulsed dynamical decoupling for fast and robust two-qubit gates on trapped ions

Íñigo Arrazola, Jorge Casanova, Julen Simon Pedernales, Z.-Y. Wang, E. Solano, Martin Bodo Plenio

Published May 9, 2018• 29 citations
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Abstract

We propose a pulsed dynamical decoupling protocol as the generator of tunable, fast, and robust quantum phase gates between two microwave-driven trapped-ion hyperfine qubits. The protocol consists of sequences of $\ensuremath{\pi}$ pulses acting on ions that are oriented along an externally applied magnetic-field gradient. In contrast to existing approaches, in our design the two vibrational modes of the ion chain cooperate under the influence of the external microwave driving to achieve significantly increased gate speeds. Our scheme is robust against the dominant noise sources, which are errors on the magnetic-field and microwave pulse intensities, as well as motional heating, predicting two-qubit gates with fidelities above 99.9% in tens of microseconds.

DOI
10.1103/physreva.97.052312

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Abstract We present the experimental implementation of a two-qubit phase gate, using a radio frequency (RF) controlled trapped-ion quantum processor. The RF-driven gate is generated by a pulsed dynamical decoupling sequence applied to the ions’ carrier transitions only. It allows for a tunable phase shift with high-fidelity results. The conditional phase shift is measured using a Ramsey-type measurement with an inferred fringe contrast of up to 99 − 2 + 1 % . We also prepare a Bell state using this laser-free gate. The phase gate is robust against common sources of error. We investigate the effect of the excitation of the center-of-mass (COM) mode, errors in the axial trap frequency, pulse area errors and errors in sequence timing. The contrast of the phase gate is not significantly reduced up to a COM mode excitation < 20 phonons, trap frequency errors of +10%, and pulse area errors of −8%. The phase shift is not significantly affected up to < 10 phonons and pulse area errors of −2%. Both, contrast and phase shift are robust to timing errors up to −30% and +15%. The gate implementation is resource efficient, since only a single driving field is required per ion. Furthermore, it holds the potential for fast gate speeds (gate times on the order of 100 µ s) by using two axial motional modes of a two-ion crystal through improved setups.
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We present a method that combines continuous and pulsed microwave-radiation patterns to achieve robust interactions among hyperfine trapped ions placed in a magnetic field gradient. More specifically, our scheme displays continuous microwave drivings with modulated phases, phase flips, and $\ensuremath{\pi}$ pulses. This leads to high-fidelity entangling gates that are resilient against magnetic field fluctuations, changes in the microwave amplitudes, and crosstalk effects. Our protocol runs with arbitrary values of microwave power, which includes the technologically relevant case of low microwave intensities. We demonstrate the performance of our method with detailed numerical simulations that take into account the main sources of decoherence.
A novel two-qubit entangling gate for trapped-ion quantum processors is proposed theoretically and demonstrated experimentally. During the gate, double-dressed quantum states are created by applying a phase-modulated continuous driving field. The speed of this quantum gate is an order of magnitude higher than that of previously demonstrated rf controlled two-qubit entangling gates in static magnetic field gradients. At the same time, the field driving the gate dynamically decouples the qubits from amplitude and frequency noise, increasing the qubits’ coherence time by 3 orders of magnitude. The gate requires only a single continuous rf field per qubit, making it well suited for scaling a quantum processor to large numbers of qubits. Implementing this entangling gate, we generate the Bell states | Φ + ⟩ and | Ψ + ⟩ in less than or equal to 313 μ s with fidelities up to 98 − 3 + 2 % in a static magnetic gradient of only 19.09 T / m . At higher magnetic field gradients, the entangling gate speed can be further improved to match that of laser-based counterparts.