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arXiv:1703.09303 · Physical review. B./Physical review. B

Rabi noise spectroscopy of individual two-level tunneling defects

Shlomi Matityahu, Jürgen Lisenfeld, Alexander Bilmes, Alexander Shnirman, Georg Weiss, Alexey Vladimirovich Ustinov, Moshe Schechter

Published Jun 28, 2017• 7 citations
arXivHTMLPDF

Abstract

Understanding the nature of two-level tunneling defects is important for minimizing their disruptive effects in various nanodevices. By exploiting the resonant coupling of these defects to a superconducting qubit, one can probe and coherently manipulate them individually. In this work, we utilize a phase qubit to induce Rabi oscillations of single tunneling defects and measure their dephasing rates as a function of the defect's asymmetry energy, which is tuned by an applied strain. The dephasing rates scale quadratically with the external strain and are inversely proportional to the Rabi frequency. These results are analyzed and explained within a model of interacting defects, in which pure dephasing of coherent high-frequency (gigahertz) defects is caused by interaction with incoherent low-frequency thermally excited defects. Our analysis sets an upper bound for the relaxation rates of thermally excited defects interacting strongly with strain fields.

DOI
10.1103/physrevb.95.241409

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Understanding the nature of two-level tunneling defects is important for minimizing their disruptive effects in various nanodevices. By exploiting the resonant coupling of these defects to a superconducting qubit, one can probe and coherently manipulate them individually. In this work, we utilize a phase qubit to induce Rabi oscillations of single tunneling defects and measure their dephasing rates as a function of the defect's asymmetry energy, which is tuned by an applied strain. The dephasing rates scale quadratically with the external strain and are inversely proportional to the Rabi frequency. These results are analyzed and explained within a model of interacting defects, in which pure dephasing of coherent high-frequency (gigahertz) defects is caused by interaction with incoherent low-frequency thermally excited defects. Our analysis sets an upper bound for the relaxation rates of thermally excited defects interacting strongly with strain fields.
Recent progress with microfabricated quantum devices has revealed that an ubiquitous source of noise originates in tunneling material defects that give rise to a sparse bath of parasitic two-level systems (TLSs). For superconducting qubits, TLSs residing on electrode surfaces and in tunnel junctions account for a major part of decoherence and thus pose a serious roadblock to the realization of solid-state quantum processors. Here, we utilize a superconducting qubit to explore the quantum state evolution of coherently operated TLSs in order to shed new light on their individual properties and environmental interactions. We identify a frequency-dependence of TLS energy relaxation rates that can be explained by a coupling to phononic modes rather than by anticipated mutual TLS interactions. Most investigated TLSs are found to be free of pure dephasing at their energy degeneracy points, around which their Ramsey and spin-echo dephasing rates scale linearly and quadratically with asymmetry energy, respectively. We provide an explanation based on the standard tunneling model, and identify interaction with incoherent low-frequency (thermal) TLSs as the major mechanism of the pure dephasing in coherent high-frequency TLS.
Recent progress with microfabricated quantum devices has revealed that an ubiquitous source of noise originates in tunneling material defects that give rise to a sparse bath of parasitic two-level systems (TLSs). For superconducting qubits, TLSs residing on electrode surfaces and in tunnel junctions account for a major part of decoherence and thus pose a serious roadblock to the realization of solid-state quantum processors. Here, we utilize a superconducting qubit to explore the quantum state evolution of coherently operated TLSs in order to shed new light on their individual properties and environmental interactions. We identify a frequency-dependence of TLS energy relaxation rates that can be explained by a coupling to phononic modes rather than by anticipated mutual TLS interactions. Most investigated TLSs are found to be free of pure dephasing at their energy degeneracy points, around which their Ramsey and spin-echo dephasing rates scale linearly and quadratically with asymmetry energy, respectively. We provide an explanation based on the standard tunneling model, and identify interaction with incoherent low-frequency (thermal) TLSs as the major mechanism of the pure dephasing in coherent high-frequency TLS.
An outstanding challenge in superconducting quantum circuits is mitigating loss from two-level system (TLS) defects. SWAP spectroscopy with flux-tunable qubits can detect individual TLSs, but the Rabi chevrons that signal coherent exchange have been observed only for the most strongly coupled defects. Here, we introduce a sequence with fast flux pulses only at state preparation and readout, switched off during the energy-relaxation delay for finer frequency resolution and longer interaction times. We detect Rabi chevrons at swap rates as low as 0.1 MHz, an order of magnitude lower than previously reported. In the dressed-state picture, we fit the coherent swap oscillations to extract the TLS energy-relaxation time. These Rabi chevrons reveal coherent TLSs with a median energy-relaxation time of 10 microseconds, at coupling strengths previously associated with incoherent TLSs. The swap coherence times exceed the qubit T2* limited by flux noise, indicating that the dressed gap protects them from low-frequency 1/f noise.
Superconducting qubits often show signatures of coherent coupling to microscopic two-level fluctuators (TLFs), which manifest themselves as avoided level crossings in spectroscopic data. In this work we study a phase qubit, in which we induce Rabi oscillations by resonant microwave driving. When the qubit is tuned close to the resonance with an individual TLF and the Rabi driving is strong enough (Rabi frequency of order of the qubit-TLF coupling), interesting four-level dynamics are observed. The experimental data show a clear asymmetry between biasing the qubit above or below the fluctuator's level splitting. Theoretical analysis indicates that this asymmetry is due to an effective coupling of the TLF to the external microwave field induced by the higher qubit levels.
Abstract The proper functioning of some micro-fabricated novel quantum devices, such as superconducting resonators and qubits, is severely affected by the presence of parasitic structural material defects known as tunneling two-level-systems (TLS). Recent experiments have reported unambiguous evidence of the strong interaction between individual (coherent) TLS using strain-assisted spectroscopy. This work provides an alternative and simple theoretical insight that illustrates how to obtain the spectral response of such strongly interacting defects residing inside the amorphous tunnel barrier of a qubit’s Josephson junction. Moreover, the corresponding spectral signatures obtained here may serve to quickly and efficiently elucidate the actual state of these interacting TLS in experiments based on strain or electric-field spectroscopy.