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arXiv:1611.01822 · Physical review. B./Physical review. B

Quantum critical local spin dynamics near the Mott metal-insulator transition in infinite dimensions

Nagamalleswararao Dasari, N. S. Vidhyadhiraja, Mark Jarrell, Ross H. McKenzie

Published Apr 5, 2017• 13 citations
arXivHTMLPDF

Abstract

Finding microscopic models for metallic states that exhibit quantum critical properties is a major theoretical challenge. We calculate the dynamical local spin susceptibility $\ensuremath{\chi}(T,\ensuremath{\omega})$ for a Hubbard model at half-filling using dynamical mean-field theory, which is exact in infinite dimensions. Qualitatively distinct behavior is found in the different regions of the phase diagram: Mott insulator, Fermi liquid metal, bad metal, and a quantum critical region above the finite-temperature critical point. The signature of the latter is $\ensuremath{\omega}/T$ scaling, where $\ensuremath{\omega}$ is the frequency and $T$ is the temperature. Our results are consistent with previous results showing scaling of the dc electrical conductivity, and they are relevant to experiments on organic charge-transfer salts.

DOI
10.1103/physrevb.95.165105

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Finding microscopic models for metallic states that exhibit quantum critical properties is a major theoretical challenge. We calculate the dynamical local spin susceptibility \ensuremathχ(T,\ensuremathω)\ensuremath{\chi}(T,\ensuremath{\omega})\ensuremathχ(T,\ensuremathω) for a Hubbard model at half-filling using dynamical mean-field theory, which is exact in infinite dimensions. Qualitatively distinct behavior is found in the different regions of the phase diagram: Mott insulator, Fermi liquid metal, bad metal, and a quantum critical region above the finite-temperature critical point. The signature of the latter is \ensuremathω/T\ensuremath{\omega}/T\ensuremathω/T scaling, where \ensuremathω\ensuremath{\omega}\ensuremathω is the frequency and TTT is the temperature. Our results are consistent with previous results showing scaling of the dc electrical conductivity, and they are relevant to experiments on organic charge-transfer salts.
The experimentally established phase diagram of the half-filled Hubbard model features the existence of three distinct finite-temperature regimes, separated by extended crossover regions. A number of crossover lines can be defined to span those regions, which we explore in quantitative detail within the framework of dynamical mean-field theory. Most significantly, the high-temperature crossover between the bad metal and Mott-insulator regimes displays a number of phenomena marking the gradual development of the Mott insulating state. We discuss the quantum critical scaling behavior found in this regime, and propose methods to facilitate its possible experimental observation. We also introduce the concept of quantum Widom lines and present a detailed discussion that highlights its physical meaning when used in the context of quantum-phase transitions.
Around a metal-to-insulator transition driven by repulsive interaction (Mott transition) the single-particle excitations and the collective excitations are equally important. Here we present results for the generic susceptibilities at zero temperature in the half-filled Hubbard model in infinite dimensions. Profiting from the high resolution of dynamic density-matrix renormalization at all energies, results for the charge, spin, and Cooper-pair susceptibilities in the metallic and the insulating phase are computed. In the insulating phase, an almost saturated local magnetic moment appears. In the metallic phase a pronounced low-energy peak is found in the spin response. It is the precursor of the magnetic moment in the insulator.
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we solve the cellular dynamical mean-field equations for the two-dimensional Hubbard model using a plaquette as the reference quantum impurity model and continuous-time quantum Monte Carlo method as impurity solver. The normal-state phase diagram as a function of interaction strength UUU, temperature TTT, and filling nnn shows that, upon increasing nnn toward the Mott insulator, there is a surface of first-order transition between two metals at nonzero doping. That surface ends at a finite temperature critical line originating at the half-filled Mott critical point. Associated with this transition, there is a maximum in scattering rate as well as thermodynamic signatures. These findings suggest a new scenario for the normal-state phase diagram of the high temperature superconductors. The criticality surmised in these systems can originate not from a T === 0 quantum critical point, nor from the proximity of a long-range ordered phase, but from a low temperature transition between two types of metals at finite doping. The influence of Mott physics therefore extends well beyond half-filling.
Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures, despite the fact that the actual low-temperature phase transition is of first order. This raises the question whether there is a hidden Mott quantum critical point. Here we argue that the dynamical mean-field theory of the Hubbard model admits, in the low-temperature limit, asymptotically scale-invariant (i.e., power-law) solutions, corresponding to the metastable insulator at the boundary of the metal-insulator coexistence region; these solutions can be linked to the physics of the pseudogap Anderson model. While our state-of-the-art numerical renormalization-group calculations reveal that this asymptotic regime is restricted to very small energies and temperatures and hence is difficult to access numerically, we uncover the existence of a wide crossover regime where the single-particle spectrum displays a different power law. We show that it is this power-law regime, corresponding to approximate local quantum criticality, which is continuously connected to and responsible for the apparent quantum critical scaling above the classical critical end point. We connect our findings to experiments on tunable Mott materials.
Abstract Correlation-driven metal–insulator transitions and temperature-driven coherence–incoherence crossovers strongly influence the dynamical responses of correlated electron systems. Motivated by recent experimental probes of spin and charge excitations, we investigate the real-frequency local spin and charge dynamical susceptibilities of the one-band Hubbard model within dynamical mean-field theory (DMFT), employing numerical renormalization group (NRG) impurity solvers. We analyze both the interaction-driven transition at half filling and the temperature evolution in the doped regime proximate to the Mott insulator. To characterize low-energy relaxation processes within the local DMFT framework, we examine normalized dissipative spectra constructed from the imaginary parts of the local susceptibilities. From these spectra we extract characteristic fluctuation scales and track their evolution with interaction strength, temperature, and band filling. At half filling, the spin and charge channels exhibit qualitatively distinct low-frequency structures governed by symmetry and correlation effects. In the doped Mott regime, we find that spin and charge fluctuations reorganize on parametrically different temperature scales, signaling a separation of local coherence scales within a purely local theory. We emphasize that our analysis pertains to on-site dynamical relaxation within DMFT rather than hydrodynamic transport. Nevertheless, the distinct temperature evolution of spin and charge fluctuation scales is qualitatively consistent with multistage crossover behavior observed in transport quantities. These results highlight how local two-particle dynamics reorganize across interaction- and temperature-driven crossovers near the Mott transition.