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arXiv:1603.03726 · Light Science & Applications

Parametric down-conversion photon-pair source on a nanophotonic chip

Xiang Guo, Chang‐Ling Zou, Carsten Schuck, Hojoong Jung, Risheng Cheng, Hong X. Tang

Published Nov 7, 2016• 305 citations
arXivHTMLPDF

Abstract

Quantum-photonic chips, which integrate quantum light sources alongside active and passive optical elements, as well as single-photon detectors, show great potential for photonic quantum information processing and quantum technology. Mature semiconductor nanofabrication processes allow for scaling such photonic integrated circuits to on-chip networks of increasing complexity. Second-order nonlinear materials are the method of choice for generating photonic quantum states in the overwhelming majority of linear optic experiments using bulk components, but integration with waveguide circuitry on a nanophotonic chip proved to be challenging. Here, we demonstrate such an on-chip parametric down-conversion source of photon pairs based on second-order nonlinearity in an aluminum-nitride microring resonator. We show the potential of our source for quantum information processing by measuring the high visibility anti-bunching of heralded single photons with nearly ideal state purity. Our down-conversion source yields measured coincidence rates of 80 Hz, which implies MHz generation rates of correlated photon pairs. Low noise performance is demonstrated by measuring high coincidence-to-accidental ratios. The generated photon pairs are spectrally far separated from the pump field, providing great potential for realizing sufficient on-chip filtering and monolithic integration of quantum light sources, waveguide circuits and single-photon detectors. A chip-based source of photon pairs for applications in quantum information processing has been built by a team of scientists in the US. Xiang Guo and co-workers from Yale University built the quantum light source from an aluminum nitride microring resonator. The strong second-order nonlinearity of the aluminum nitride yields efficient parametric down-conversion. This allows 775-nm-wavelength pump photons to be converted into a pair of entangled photons in the telecommunications window of 1550 nm. Tests indicated that the heralded photons generated by the microring source are anti-bunched and have high visibility and a high purity of state, indicating that they are highly suitable for use in quantum optics experiments. In principle, the on-chip source is compatible with megahertz generation rates and large-scale manufacture of integrated optical circuits.

DOI
10.1038/lsa.2016.249

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Quantum-photonic chips, which integrate quantum light sources alongside active and passive optical elements, as well as single-photon detectors, show great potential for photonic quantum information processing and quantum technology. Mature semiconductor nanofabrication processes allow for scaling such photonic integrated circuits to on-chip networks of increasing complexity. Second-order nonlinear materials are the method of choice for generating photonic quantum states in the overwhelming majority of linear optic experiments using bulk components, but integration with waveguide circuitry on a nanophotonic chip proved to be challenging. Here, we demonstrate such an on-chip parametric down-conversion source of photon pairs based on second-order nonlinearity in an aluminum-nitride microring resonator. We show the potential of our source for quantum information processing by measuring the high visibility anti-bunching of heralded single photons with nearly ideal state purity. Our down-conversion source yields measured coincidence rates of 80 Hz, which implies MHz generation rates of correlated photon pairs. Low noise performance is demonstrated by measuring high coincidence-to-accidental ratios. The generated photon pairs are spectrally far separated from the pump field, providing great potential for realizing sufficient on-chip filtering and monolithic integration of quantum light sources, waveguide circuits and single-photon detectors. A chip-based source of photon pairs for applications in quantum information processing has been built by a team of scientists in the US. Xiang Guo and co-workers from Yale University built the quantum light source from an aluminum nitride microring resonator. The strong second-order nonlinearity of the aluminum nitride yields efficient parametric down-conversion. This allows 775-nm-wavelength pump photons to be converted into a pair of entangled photons in the telecommunications window of 1550 nm. Tests indicated that the heralded photons generated by the microring source are anti-bunched and have high visibility and a high purity of state, indicating that they are highly suitable for use in quantum optics experiments. In principle, the on-chip source is compatible with megahertz generation rates and large-scale manufacture of integrated optical circuits.
Summary form only given. Recent progress in quantum information processing has highlighted the benefits of integrated optic devices for quantum applications (e.g.[l]). The miniaturization of systems with increased complexity drastically reduces the required space and paves the way for future commercialization.In the past five years, several groups have demonstrated promising approaches to achieve quantum interference and photonic gates on-chip (e.g.[2]). However, in all of these experiments the preparation of the photon pairs has been performed outside the integrated devices employing bulk crystal parametric down-conversion (PDC) sources, while the efficient coupling between these sources and the integrated circuit remains as a bottleneck for the design of systems with increasing complexity. On the other hand remarkable efforts have been devoted to the development of integrated PDC sources for photon pair generation inside channel waveguides [3]. The main benefits of guided-wave PDC processes include high conversion efficiencies and spatial mode control. We combine the prospects of an efficient type-I PDC source based on Titanium-indiffused periodically poled Z-cut Lithium Niobate waveguides (Ti:PPLN) with a passive wavelength division demultiplexing coupler on-chip, shown in Figure 1. The coupler allows for excellent spatial separation generated photon pairs. The non-degenerate decay of pump photons at 532 nm into signal and idler photons provides us with a photon pair at wavelengths of 1575 nm and 800 nm, respectively. Thus low-loss fiber transmission of the prepared states at 1575 nm can be accomplished on the one hand, while on the other hand efficient heralding of conditioned states can be implemented with off-the-shelf silicon-based detectors. The quality and efficiency of our source was improved by the deposition of endface-coatings. This allows for the efficient launching of pump light into the waveguide and it simultaneously provides a close-toperfect transmission of signal and idler at the output of our source, reflecting the pump light by more than 99%. In conditioned coincidence measurements in the picosecond pulsed regime we achieved heralding of single photons with almost no influence of background radiation, expressed by high coincidences-toaccidentals ratios up to CAR > 7400. The preparation exceeded 60% of efficiency in the low pump power regime, accompanied with ultra-low second-order correlation functions of g(2) (0) <; 4.10-3. These figures of merit in conjunction with the integration of active and passive elements make our source a candidate for a basic building block in more complex and miniaturized quantum network realizations in the future.
Abstract Silicon carbide (SiC) polytypes are emerging for integrated nonlinear and quantum photonics due to their wide-bandgap energies, second-order optic nonlinearity and process compatibility with complementary metal-oxide-semiconductor technologies. Among polytypes, 3C-SiC is the only one epitaxially grown on wafer-scale silicon substrates. However, on-chip nonlinear and quantum light sources leveraging the second-order nonlinearity of 3C-SiC have not been reported to our knowledge. Here, we design and fabricate an elliptical microring on 3C-SiC. We demonstrate a nonlinear light source with a second-harmonic generation efficiency of 17.4±0.2%W−117.4\pm 0.2 \% {W}^{-1}17.4±0.2%W−1 17.4 ± 0.2 % W − 1 and difference-frequency generation with a signal-idler bandwidth of 97 nm. We demonstrate a spontaneous parametric down-conversion source with a photon-pair generation rate of 4.8 MHz and a coincidence-to-accidental ratio of 3361±843361\pm 843361±84 3361 ± 84 . We measure a low heralded single-photon second-order coherence gH(2)=0.0007{g}_{H}^{\left(2\right)}=0.0007gH(2)​=0.0007 g H 2 = 0.0007 . We observe time-bin entanglement with a visibility of 86.0±2.4%86.0\pm 2.4 \%86.0±2.4% 86.0 ± 2.4 % using this source. Our work paves a way toward SiC-based on-chip nonlinear and quantum photonic circuits.
An integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, a new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential toward the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate a heralded single photon with a typical heralded second-order autocorrelation g_{H}^{(2)}(0) of 0.045±0.001. Our results pave the way for developing a chip-scale quantum photonic circuit.
Integrated quantum light source is increasingly desirable in large-scale quantum information processing.~Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential towards the monolithic integration of quantum light source.~In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5$\pm$6.5%, which is further configured to generate heralded single photon with a typical heralded second-order auto-correlation gH(2)(0)g^{(2)}_{H}(0)gH(2)​(0) of 0.045$\pm$0.001. Our results pave the way for developing chip-scale quantum photonic circuit.
Quantum photon sources of high rate, brightness, and purity are increasingly desirable as quantum information systems are quickly scaled up and applied to many fields. Using a periodically poled lithium niobate microresonator on chip, we demonstrate photon-pair generation at high rates of 8.5 and 36.3 MHz using only 3.4 and 13.4 μW pump power, respectively, marking orders of magnitude improvement over the state of the art, across all material platforms. These results constitute the first direct measurement of the device's giant single photon nonlinearity. The measured coincidence to accidental ratio is well above 100 at those high rates and reaches 14682±4427 at a lower pump power. The same chip enables heralded single-photon generation at tens of megahertz rates, each with low autocorrelation g_{H}^{(2)}(0)=0.008 and 0.097 for the microwatt pumps, which marks a new milestone. Such distinct performance, facilitated by the chip device's noiseless and giant optical nonlinearity, will contribute to the forthcoming pervasive adoption of quantum optical information technologies.