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arXiv:1511.02192 · Scientific Reports

Quantum memristors

Paul E. Pfeiffer, I. L. Egusquiza, Massimiliano Di Ventra, Mikel Sanz, E. Solano

Published Jul 6, 2016• 86 citations
arXivHTMLPDF

Abstract

Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantum regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. The proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.

DOI
10.1038/srep29507

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Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantum regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. The proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.
Quantum computer technology harnesses the features of quantum physics for revolutionizing information processing and computing. As such, quantum computers use physical quantum gates that process information unitarily, even though the final computing steps might be measurement-based or non-unitary. The applications of quantum computers cover diverse areas, reaching from well-known quantum algorithms to quantum machine learning and quantum neural networks. The last of these is of particular interest by belonging to the promising field of artificial intelligence. However, quantum neural networks are technologically challenging as the underlying computation requires non-unitary operations for mimicking the behavior of neurons. A landmark development for classical neural networks was the realization of memory-resistors, or "memristors". These are passive circuit elements that keep a memory of their past states in the form of a resistive hysteresis and thus provide access to nonlinear gate operations. The quest for realising a quantum memristor led to a few proposals, all of which face limited technological practicality. Here we introduce and experimentally demonstrate a novel quantum-optical memristor that is based on integrated photonics and acts on single photons. We characterize its memristive behavior and underline the practical potential of our device by numerically simulating instances of quantum reservoir computing, where we predict an advantage in the use of our quantum memristor over classical architectures. Given recent progress in the realization of photonic circuits for neural networks applications, our device could become a building block of immediate and near-term quantum neuromorphic architectures.
Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.
We propose the encoding of memristive quantum dynamics on a digital quantum computer. Using a set of auxiliary qubits, we simulate an effective non-Markovian environment inspired by a collisional model, reproducing memristive features between expectation values of different operators in a single qubit. We numerically test our proposal in an IBM quantum simulator with 32 qubits, obtaining a pinched hysteresis curve that characterizes our quantum memristor model. Furthermore, we extend our method to the case of two coupled quantum memristors, opening the door to the study of neuromorphic quantum computing in the current noisy devices.
A quantum memristor is a passive resistive circuit element with memory, engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system–bath coupling is mediated through a weak measurement scheme and classical feedback on the system. In quantum photonics, such a device can be designed from a beam splitter with tunable reflectivity, which is modified depending on the results of measurements in one of the outgoing beams. Here, we show that a similar implementation can be achieved with frequency-entangled optical fields and a frequency mixer that, working similarly to a beam splitter, produces state superpositions. We show that the characteristic hysteretic behavior of memristors can be reproduced when analyzing the response of the system with respect to the control, for different experimentally attainable states. Since memory effects in memristors can be exploited for classical and neuromorphic computation, the results presented in this work could be a building block for constructing quantum neural networks in quantum photonics, when scaling up.
A quantum memristor is a passive resistive circuit element with memory, engineered in a given quantum platform. It can be represented by a quantum system coupled to a dissipative environment, in which a system-bath coupling is mediated through a weak measurement scheme and classical feedback on the system. In quantum photonics, such a device can be designed from a beam splitter with tunable reflectivity, which is modified depending on the results of measurements in one of the outgoing beams. Here, we show that a similar implementation can be achieved with frequency-entangled optical fields and a frequency mixer that, working similarly to a beam splitter, produces state superpositions. We show that the characteristic hysteretic behavior of memristors can be reproduced when analyzing the response of the system with respect to the control, for different experimentally attainable states. Since memory effects in memristors can be exploited for classical and neuromorphic computation, the results presented in this work could be a building block for constructing quantum neural networks in quantum photonics, when scaling up.
The nontrivial integration of qubits with classical computing systems and the lack of quantum-memory devices remain a key obstacle in the development of quantum technologies. Here, we present a theoretical platform for hybrid quantum devices with memory characteristics. In these current-driven hybrid memristors, a ferroelectric layer serves as the tunneling barrier in a superconducting Josephson junction; thus, the potential barrier is history-dependent. A memory-integrated phase qubit and a Lagrangian description of the superconducting circuit are also presented, paving the way to highly functional, self-modulated Josephson-junction technologies.