Hirsch's dynamic Hubbard model describes the effect of orbital expansion with occupancy by coupling the doublon operator to an auxiliary boson. In the Mott insulating phase, empty sites (holes) and doubly occupied orbitals (doublons) become charge carriers on top of the half-filled background. We use the nonequilibrium dynamical mean field method to study the properties of photo-doped doublons and holes in this model in the strongly correlated regime. In particular, we discuss how photodoping leads to doublon and hole populations with different effective temperatures, and we analyze the relaxation behavior as a function of the boson coupling and boson energy. In the polaronic regime, the nontrivial energy exchange between doublons, holes, and bosons can result in a negative temperature distribution for the holes.
Hirsch's dynamic Hubbard model describes the effect of orbital expansion with occupancy by coupling the doublon operator to an auxiliary boson. In the Mott insulating phase, empty sites (holes) and doubly occupied orbitals (doublons) become charge carriers on top of the half-filled background. We use the nonequilibrium dynamical mean field method to study the properties of photo-doped doublons and holes in this model in the strongly correlated regime. In particular, we discuss how photodoping leads to doublon and hole populations with different effective temperatures, and we analyze the relaxation behavior as a function of the boson coupling and boson energy. In the polaronic regime, the nontrivial energy exchange between doublons, holes, and bosons can result in a negative temperature distribution for the holes.
Hirsch's dynamic Hubbard model describes the effect of orbital expansion with occupancy by coupling the doublon operator to an auxiliary boson. In the Mott insulating phase, empty sites (holes) and doubly occupied orbitals (doublons) become charge carriers on top of the half-filled background. We use the nonequilibrium dynamical mean field method to study the properties of photo-doped doublons and holes in this model in the strongly correlated regime. In particular, we discuss how photodoping leads to doublon and hole populations with different effective temperatures, and we analyze the relaxation behavior as a function of the boson coupling and boson energy. In the polaronic regime, the nontrivial energy exchange between doublons, holes, and bosons can result in a negative temperature distribution for the holes.
We use a nonequilibrium implementation of extended dynamical mean-field theory in combination with a noncrossing approximation impurity solver to study the effect of dynamical screening in photoexcited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes furthermore opens new relaxation channels and significantly speeds up the thermalization process. We also investigate the effect of the energy distribution of the photo doped carriers on the screening.
We study the relaxation dynamics of photocarriers in the paramagnetic Mott insulating phase of the half-filled two-band Hubbard model. Using nonequilibrium dynamical mean-field theory, we excite charge carriers across the Mott gap by a short hopping modulation, and simulate the evolution of the photodoped population within the Hubbard bands. We observe an ultrafast charge-carrier relaxation driven by the emission of local spin excitations with an inverse relaxation time proportional to the Hund's coupling. The photodoping generates additional side-bands in the spectral function, and for strong Hund's coupling, the photodoped population also splits into several resonances. The dynamics of the local many-body states reveals two effects, thermal blocking and kinetic freezing, which manifest themselves when the Hund's coupling becomes of the order of the temperature or the bandwidth, respectively. These effects, which are absent in the single-band Hubbard model, should be relevant for the interpretation of experiments on correlated materials with multiple active orbitals. In particular, the features revealed in the nonequilibrium energy distribution of the photocarriers are experimentally accessible, and provide information on the role of the Hund's coupling in these materials.
Electronic correlations arise from the competition between the electrons' kinetic and Coulomb interaction energy and give rise to a rich phase diagram and many emergent quasiparticles. The binding of doubly-occupied and empty sites into a doublon-holon exciton is an example of this in the Hubbard model. Unlike traditional excitons in semiconductors, in the Hubbard model it is the kinetic energy which provides the binding energy. Upon doping, we find the emergence of exciton complexes, such as a holon-doublon-holon trion. The appearance of these low-lying collective excitations make screening more effective in the doped system. As a result, Hubbard-based modelling of correlated materials should use different values of U for the doped system and the insulating parent compound, which we illustrate using the cuprates as an example.
The Mott metal-insulator transition in the Hubbard model is studied by constructing a dynamical slave-boson mean-field theory in the limit of large lattice coordination number z that incorporates the binding between doubly occupied (doublon) and empty (holon) sites. On the Mott insulating side where all doublons and holons bond in real space into excitonic pairs leading to the charge gap, the theory simplifies considerably to leading order in 1/z and becomes exact on the infinite-z Bethe lattice. An asymptotic solution is obtained for a continuous Mott transition associated with the closing of the charge gap at a critical value of the Hubbard Uc and the corresponding doublon density ndc, hopping ${\ensuremath{\chi}}_{d}^{c}$ and doublon-holon pairing ${\mathrm{\ensuremath{\Delta}}}_{d}^{c}$ amplitudes. We find ${U}_{c}={U}_{\mathrm{BR}}[1\ensuremath{-}2{n}_{d}^{c}\ensuremath{-}\sqrt{z}({\ensuremath{\chi}}_{d}^{c}+{\mathrm{\ensuremath{\Delta}}}_{d}^{c})]\ensuremath{\simeq}0.8{U}_{\mathrm{BR}}$, where UBR is the critical value for the Brinkman-Rice transition in the Gutzwiller approximation captured in the static mean-field solution of the slave-boson formulation of Kotliar and Ruckenstein. Thus, the Mott transition can be viewed as the quantum correction to the Brinkman-Rice transition due to doublon-holon binding. Quantitative comparisons are made to the results of the dynamical mean-field theory, showing good agreement. In the absence of magnetic order, the Mott insulator is a U(1) quantum spin liquid with nonzero intersite spinon hopping that survives the large-z limit and lifts the 2N-fold degeneracy of the local moments. We show that the spinons are coupled to the doublons/holons by a dissipative compact U(1) gauge field in the deconfined phase, realizing the spin-charge separated gapless spin liquid Mott insulator.
We derive the disorder vs doping phase diagram of the doped Hubbard model via dynamical mean-field theory combined with typical medium theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven) metal-insulator transitions. We observe a transition from a metal to an Anderson-Mott insulator for increasing disorder strength at all interactions. In the weak correlation regime and rather small doping, the Anderson-Mott insulator displays properties which are similar to the ones found at half filling. In particular, this phase is characterized by the presence of empty sites. If we further increase either the doping or the correlation, however, an Anderson-Mott phase of a different kind arises for sharply weaker disorder strength. This phase occupies the largest part of the phase diagram in the strong-correlation regime and is characterized by the absence of the empty sites.