Quantum interfaces between photons and atomic ensembles have emerged as powerful tools for quantum technologies. Efficient storage and retrieval of single photons requires long-lived collective atomic states, which is typically achieved with immobilized atoms. Thermal atomic vapours, which present a simple and scalable resource, have only been used for continuous variable processing or for discrete variable processing on short timescales where atomic motion is negligible. Here we develop a theory based on motional averaging to enable room temperature discrete variable quantum memories and coherent single-photon sources. We demonstrate the feasibility of this approach to scalable quantum memories with a proof-of-principle experiment with room temperature atoms contained in microcells with spin-protecting coating, placed inside an optical cavity. The experimental conditions correspond to a few photons per pulse and a long coherence time of the forward scattered photons is demonstrated, which is the essential feature of the motional averaging.
Quantum memories are a key technology for distributing entanglement in large-scale quantum networks. They allow for coherent control and temporal reordering of single photons which is a fundamental prerequisite for quantum repeaters, local synchronization and buffering of quantum information. These applications require bright and pure sources of indistinguishable single photons, as well as long-lived, efficient, and high-bandwidth quantum memories with minimal noise. The demonstration of robust, scalable, multi-mode photonic interfaces between different types of quantum memories and single-photon sources remains an open experimental challenge. This work contributes to this endeavor by investigating a heterogeneous interface between a semiconductor quantum dot single-photon source and a room-temperature atomic vapor memory. The first part of this work presents the first room-temperature, ladder-type atomic vapor memory that operates on the Cs D1 line at 895\,nm. The performance of the memory is characterized using attenuated laser pulses at the single-photon level. The memory achieves an internal efficiency of
ηint=15(1)% at a storage time of
τs=17.4(2)\,ns. We derive a quantitative benchmark for the memory compatibility with quantum dot single-photon sources. The memory's high signal-to-noise ratio of 830(80), and its spectral acceptance window of
W=560\,MHz promise compatibility with single photons from state-of-the-art InGaAs quantum dot devices. Furthermore, we present such a nano-integrated quantum dot device and characterize its optical properties. We measure a radiative lifetime of 1.3(1)\,ns and an inhomogeneously broadened linewidth of 5.1(1)\,GHz. The temperature tuning of the emission wavelength to the Cs D1 line allows coupling of the quantum dot to the memory in a joint experiment. The storage of single photons from a quantum dot source in a room-temperature atomic memory is demonstrated with on-demand retrieval. The variable storage time of up to
τs=19.8\,ns and the memory's fractional delay of
Df=14(1) present a significant advancement in the research field. We compare our results with other types of interfaces between single-photon sources and quantum memories and discuss the performance in the context of quantum network applications. This work marks an important step towards local buffering and synchronization of quantum information in heterogeneous quantum network nodes.
Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate on-demand storage and retrieval of single photons from a semiconductor quantum dot device in a room-temperature atomic vapor memory. A deterministically fabricated InGaAs quantum dot light source emits single photons at the wavelength of the cesium D1 line at 895\,nm which exhibit an inhomogeneously broadened linewidth of 5.1(7)\,GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3)\,ns at an internal efficiency of
ηint=0.6(1)%. Our results significantly expand the application space of both room-temperature vapor memories and semiconductor quantum dots in future quantum network architectures.
Efficient quantum memories will be an essential building block of large scale networked quantum systems and provide a link between flying photonic qubits and atomic or quasi-atomic local quantum processors. To provide a path to scalability avoidance of bulky, difficult to maintain systems such as high vacuum and low temperature cryogenics is imperative. Memory efficiencies above 50% are required to be operating above the quantum no-cloning limit. Such high efficiencies have only been achieved in systems with photon sources tailored to the memory bandwidth. In this paper we explore the combination of an ultralow spectral bandwidth source of single photons from cavity-enhanced spontaneous parametric down-conversion with a gas-ensemble atomic memory. Our rubidium vapour gradient echo memory achieves 84$\pm$3% recall efficiency of single photons: a record for an always-ready, hot, and vacuum system free optical memory.
Abstract Interfacing light from solid-state single-photon sources with scalable and robust room-temperature quantum memories has been a long-standing challenge in photonic quantum information technologies due to inherent noise processes and time-scale mismatches between the operating conditions of solid-state and atomic systems. Here, we demonstrate storage of single photons from a semiconductor quantum dot (QD) device in a room-temperature atomic vapor memory and their on-demand retrieval. A deterministically fabricated InGaAs QD light source emits single photons at the wavelength of the cesium D1 line at 895 nm which exhibit an inhomogeneously broadened linewidth of 5.1(7) GHz and are subsequently stored in a low-noise ladder-type cesium vapor memory. We show control over the interaction between the single photons and the atomic vapor, allowing for variable retrieval times of up to 19.8(3) ns. A maximum internal efficiency of η int = 0.6 ( 1 ) % is achieved. Our results expand the application space of both room-temperature vapor memories and semiconductor QDs in future quantum network architectures.
Abstract Non-classical photon sources are a crucial resource for distributed quantum networks. Photons generated from matter systems with memory capability are particularly promising, as they can be integrated into a network where each source is used on-demand. Among all kinds of solid state and atomic quantum memories, room-temperature atomic vapours are especially attractive due to their robustness and potential scalability. To-date room-temperature photon sources have been limited either in their memory time or the purity of the photonic state. Here we demonstrate a single-photon source based on room-temperature memory. Following heralded loading of the memory, a single photon is retrieved from it after a variable storage time. The single-photon character of the retrieved field is validated by the strong suppression of the two-photon component with antibunching as low as
gRR∣W=1(2)=0.20±0.07 g RR∣W=1 ( 2 ) = 0.20 ± 0.07 . Non-classical correlations between the heralding and the retrieved photons are maintained for up to
τNCR=(0.68±0.08) ms τ NC R = ( 0.68 ± 0.08 ) ms , more than two orders of magnitude longer than previously demonstrated with other room-temperature systems. Correlations sufficient for violating Bell inequalities exist for up to τBI = (0.15 ± 0.03) ms.