arXiv:1410.2338 · Journal of Physics Condensed Matter
Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
Juha T. Muhonen, Arne Laucht, Stephanie Simmons, Juan Pablo Dehollain, Rachpon Kalra, Fay E. Hudson, Solomon Freer, Kohei M. Itoh, David N. Jamieson, Jeffrey Colin McCallum, Andrew S. Dzurak, Andrea Morello
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual (31)P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized (31)P nucleus of a single P donor in isotopically purified (28)Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual (31)P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized (31)P nucleus of a single P donor in isotopically purified (28)Si. We find average gate fidelities of 99.95% for the electron and 99.99% for the nuclear spin. These values are above certain error correction thresholds and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware and not the intrinsic behaviour of the qubit.
Abstract : As classical computers begin to reach their fundamental performance limits, quantum computers will be an invaluable tool for the advance of science and technology. The trillion dollar silicon electronics industry sets the perfect stage for the evolution of quantum computation, yet it has so far proved to be a tough challenge to implement all the elements needed to build a scalable quantum computer in silicon. This thesis presents the first experimental demonstration of the full operation of single-spin qubits in Si. Our qubits consist of the electron and nuclear spins of a single phosphorus atom, implanted in a Si substrate, and controlled by a gated nanostructure. We describe an experimental setup tailored to minimise electron temperature and perform realtime data acquisition, analysis and instrument control. We present modeling, simulation and characterisation of a novel nanoscale coplanar antenna for spin control, designed to work at frequencies up to 50 GHz. These tools have allowed us to demonstrate the first ever single-atom spin-qubits in natural silicon, leading the way to demonstrating record qubit performances in isotopically purified 28Si: an electron spin qubit with measurement and control fidelities 97% and coherence times of 0.5 seconds; and a nuclear spin qubit with fidelities 99.99% and a record single-spin coherence of 30 s. We have performed noise spectroscopy in our system and concluded that decoherence is currently limited by magnetic noise originating from our broadband antenna.
Abstract Universal quantum computation will require qubit technology based on a scalable platform1, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations2, 3. Although various qubit systems have shown high fidelities at the one-qubit level4–10, the only solid-state qubits manufactured using standard lithographic techniques that have demonstrated two-qubit fidelities near the fault-tolerance threshold6 have been in superconductor systems. Silicon-based quantum dot qubits are also amenable to large-scale fabrication and can achieve high single-qubit gate fidelities (exceeding 99.9 per cent) using isotopically enriched silicon11, 12. Two-qubit gates have now been demonstrated in a number of systems13–15, but as yet an accurate assessment of their fidelities using Clifford-based randomized benchmarking, which uses sequences of randomly chosen gates to measure the error, has not been achieved. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80 to 89 per cent, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7 per cent and an average controlled-rotation fidelity of 98 per cent. These fidelities are found to be limited by the relatively long gate times used here compared with the decoherence times of the qubits. Silicon qubit designs employing fast gate operations with high Rabi frequencies16, 17, together with advanced pulsing techniques18, should therefore enable much higher fidelities in the near future.
Spin is a quantum mechanical property that describes the magnetic orientation of elementary and composite particles such as electrons and nuclei. For spin-half particles placed in a magnetic field, two states with differing energies are defined. Proposals exist for developing a revolutionary kind of computer that encodes bits of information on the states of a simple quantum two-level system - like those of a spin in a magnetic field. These quantum computers exploit the fundamental principles of quantum mechanics in order to perform certain calculations exponentially faster than their classical counterparts. Key to the development of such a device is the identification of potential systems that are suitable for employment as a quantum bit (qubit). This thesis explores quantum bits constructed from the spin states of single atoms hosted in silicon semiconductor devices. Silicon is an exceptional platform for spin-based quantum computing - in addition to being the dominant material in the microelectronic industry, it is also predominantly composed of nuclear spin-zero isotopes, providing very little background magnetic disturbance. The donor-atom phosphorus (31P) is investigated here. It possesses a nucleus that binds an additional electron to its positive charge, providing two distinct spin qubits. Here, several world-first experimental milestones in spin-based quantum information processing are reported. First, the readout of the electron spin is demonstrated in single-shot, using a silicon device which combines implanted phosphorus donors with a sensitive nanoscale electrometer. Then, the electron spin is coherently operated as a qubit by delivering on-chip microwave excitations. Combining the electron spin detection and control capabilities enables a quantum non-demolition measurement of the single 31P nuclear spin. Experiments yield exceptional nuclear readout fidelities - the highest for any solid-state qubit. Through an application of nuclear magnetic resonance, high-fidelity quantum control of the nuclear spin qubit is demonstrated. Finally, a single spin-bearing silicon nucleus (29Si) coupled to the electron spin is detected in single-shot and operated as a qubit. These results, along with the clear pathways identified for improving device performance, illustrate that single-atom electron and nuclear spin qubits in silicon constitute an excellent basis on which to construct a quantum computer.
A key ingredient for fault-tolerant quantum computers are sufficiently accurate logic gates on single and multiple qubits in the presence of decohering noise. In this thesis, we theoretically develop and experimentally demonstrate such high-fidelity quantum gates for semiconductor-based quantum computing. Specifically, we consider a qubit encoded in the singlet and one triplet state of two electron spins in GaAs. While its potential for optical coupling makes GaAs an attractive material, highly auto-correlated magnetic field noise from fluctuating nuclear spins leads to considerably lower coherence times than for Si-based devices, where nuclear spins can be removed by isotopic purification. In addition to noise, the control methods used in earlier experiments are based on unrealistic approximations. For these reasons, fidelities well above 99 %, as required by current quantum error correction (QEC) schemes, have not been obtained before this thesis. To tackle these issues, we extend the filter function formalism to describe quantum gates and processes in the presence of experimentally relevant non-Markovian noise. Since this formalism can consider all relevant noise sources in a computationally efficient manner, it can be used to find optimal control pulses by numerical optimization, leading to predicted single-qubit gate fidelities of 99.9 %. Furthermore, we deal with the considerable control challenges associated with this qubit type by experimental calibration of the optimized control pulses. To this end, we extend our previous experimental gate set calibration (GSC) routine to remove systematic gate errors on an arbitrary number of qubits. We apply the numerically optimized single-qubit control pulses to our GaAs sample and experimentally calibrate them with GSC. This procedure yields an average gate fidelity of 99.50 ± 0.04 % and a low leakage rate of 0.13 ± 0.03 % out of the computational subspace, characterized by randomized benchmarking. We also optimize realistic two-qubit control pulses, considering current control hardware as well as interqubit Coulomb and exchange coupling that cannot be fully turned off. Using measured noise spectra, we show that two-qubit gate fidelities of 99.90 % can be reached in GaAs, while 99.99 % can be achieved in Si. These results demonstrate that high-fidelity gates can be realized even in the presence of nuclear spins as in GaAs.
Abstract Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The 31 P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31 P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched 28 Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity F p ≈ 81 %, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.
Recent experimental efforts have led to considerable interest in donor-based localized electron spins in Si as viable qubits for a scalable silicon quantum computer. With the use of isotopically purified 28Si and the realization of extremely long spin coherence time in single-donor electrons, the recent experimental focus is on two-coupled donors with the eventual goal of a scaled-up quantum circuit. Motivated by this development, we simulate the statistical distribution of the exchange coupling J between a pair of donors under realistic donor placement straggles, and quantify the errors relative to the intended J value. With J values in a broad range of donor-pair separation (5<|R|<60 nm), we work out various cases systematically, for a target donor separation R0 along the [001], [110] and [111] Si crystallographic directions, with |R0|=10,20 or 30 nm and standard deviation σR=1,2,5 or 10 nm. Our extensive theoretical results demonstrate the great challenge for a prescribed J gate even with just a donor pair, a first step for any scalable Si-donor-based quantum computer.