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arXiv:1406.4093 · Physical Review B

Decoherence of an entangled state of a strongly correlated double quantum dot structure through tunneling processes

C. A. Büsser, Inés de Vega, Fabian Heidrich‐Meisner

Published Nov 12, 2014• 5 citations
arXivHTMLPDF

Abstract

We consider two quantum dots described by the Anderson-impurity model with one electron per dot. The goal of our work is to study the decay of a maximally entangled state between the two electrons localized in the dots. We prepare the system in a perfect singlet and then tunnel couple one of the dots to leads, which induces nonequilibrium dynamics. We identify two cases: If the leads are subject to a sufficiently large voltage and thus a finite current, then direct-tunneling processes cause decoherence and the entanglement as well as spin correlations decay exponentially fast. At zero voltage or small voltages and beyond the mixed-valence regime, virtual-tunneling processes dominate and lead to a slower loss of coherence. We analyze this problem by studying the real-time dynamics of the spin correlations and the concurrence using two techniques, namely, the time-dependent density matrix renormalization group method and a master-equation method. The results from these two approaches are in excellent agreement in the direct-tunneling regime for the case in which the dot is weakly tunnel coupled to the leads. We present a quantitative analysis of the decay rates of the spin correlations and the concurrence as a function of tunneling rate, interaction strength, and voltage.

DOI
10.1103/physrevb.90.205118

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We consider two quantum dots described by the Anderson-impurity model with one electron per dot. The goal of our work is to study the decay of a maximally entangled state between the two electrons localized in the dots. We prepare the system in a perfect singlet and then tunnel couple one of the dots to leads, which induces nonequilibrium dynamics. We identify two cases: If the leads are subject to a sufficiently large voltage and thus a finite current, then direct-tunneling processes cause decoherence and the entanglement as well as spin correlations decay exponentially fast. At zero voltage or small voltages and beyond the mixed-valence regime, virtual-tunneling processes dominate and lead to a slower loss of coherence. We analyze this problem by studying the real-time dynamics of the spin correlations and the concurrence using two techniques, namely, the time-dependent density matrix renormalization group method and a master-equation method. The results from these two approaches are in excellent agreement in the direct-tunneling regime for the case in which the dot is weakly tunnel coupled to the leads. We present a quantitative analysis of the decay rates of the spin correlations and the concurrence as a function of tunneling rate, interaction strength, and voltage.
For a double quantum dot system in a parallel geometry, we demonstrate that by combining the effects of a flux and driving an electrical current through the structure, the spin correlations between electrons localized in the dots can be controlled at will. In particular, a current can induce spin correlations even if the spins are uncorrelated in the initial equilibrium state. Therefore, we are able to engineer an entangled state in this double-dot structure. We take many-body correlations fully into account by simulating the real-time dynamics using the time-dependent density matrix renormalization group method. Using a canonical transformation, we provide an intuitive explanation for our results, related to Ruderman-Kittel-Kasuya-Yoshida physics driven by the bias.
We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and study its dependence on quantum dot parameters such as dot size and double dot separations, as well as the host materials (GaAs and Si). At the short time limit, electron-phonon interaction only causes an incomplete initial Gaussian decay of the off-diagonal density matrix element in the singlet-triplet Hilbert space; a complete long-time exponential decay due to phonon relaxation would eventually dominate over two-spin decoherence. We analyze two-spin decoherence in both symmetric and biased double quantum dots, identifying their difference in electron-phonon coupling and the relevant consequences.
We describe time-dependent single-electron transport through quantum dots in the Coulomb blockade regime. Coherent dynamics of a single charge qubit in a double quantum dot is discussed with full one-qubit manipulation. Strength of decoherence is controlled with the applied voltage, but uncontrolled decoherence arises from electron–phonon coupling and background fluctuations. Then energy-relaxation dynamics is discussed for orbital and spin degree of freedom in a quantum dot. The electron–phonon interaction and spin–orbit coupling can be investigated as the dissipation problem. Finally, charge detection measurement is presented for statistical analysis of single-electron tunnelling transitions and for a sensitive qubit read-out device.
We study the dynamics of entanglement of two electron spins in two quantum dots, in which each electron is interacting with its nuclear spin environment. Focusing on the case of uncoupled dots, and starting from either Bell or Werner states of two qubits, we calculate the decay of entanglement due to the hyperfine interaction with the nuclei. We mostly focus on the regime of magnetic fields in which the bath-induced electron spin flips play a role, for example, their presence leads to the appearance of entanglement sudden death at finite time for two qubits initialized in a Bell state. For these fields, the intrabath dipolar interactions and spatial inhomogeneity of hyperfine couplings are irrelevant on the time scale of coherence (and entanglement) decay, and most of the presented calculations are performed using the uniform-coupling approximation to the exact hyperfine Hamiltonian. We provide a comprehensive overview of entanglement decay in this regime, considering both free evolution of the qubits, and an echo protocol with simultaneous application of $\ensuremath{\pi}$ pulses to the two spins. All the currently relevant for experiments bath states are considered: the thermal state, narrowed states (characterized by diminished uncertainty of one of the components of the Overhauser field) of two uncorrelated baths, and a correlated narrowed state with a well-defined value of the zzz component of the Overhauser field interdot gradient. While we mostly use concurrence to quantify the amount of entanglement in a mixed state of the two electron spins, we also show that their entanglement dynamics can be reconstructed from measurements of the currently relevant for experiments entanglement witnesses and the fidelity of quantum teleportation, performed using a partially disentangled state as a resource.
The decoherence and fidelity of spin states in a localized single-electron quantum dot in the presence of a dc magnetic field, arising either from the nuclear hyperfine interaction within the dot or due to its coupling with another localized quantum dot, are examined in detail. A general framework for determining the time evolution of the reduced density matrix. for a single dot is presented, which is exact up to the second order in interaction with any reservoir. In particular, it is applied to the problem of nuclear hyperfine coupling, and approximate estimates of coherence decay time are made when the nuclear spins are either polarized or unpolarized and the internal dynamics of nuclear spins is determined mainly by the nuclear magnetic dipole-dipole interaction. The fidelity of a pure unperturbed electronic one-qubit spin state is obtained as a function of time, which is exact even on a very short timescale of logic gate operations. The time variation of the fidelity of the same one-qubit state on the localized dot as a part of the direct product with another one-qubit state on another localized dot arising because of coupling between these quantum dots is also calculated in this paper. In this case, we include both the single-particle tunnelling between the dots as well as the direct and exchange Coulomb interactions, including on-site Coulomb repulsion. This allows for the double occupation of a single dot. It is found that the loss of fidelity of such two-qubit states due to double occupancy and additional phase errors in the presence of appreciable dot-dot coupling can become a more severe limiting factor than that due to the hyperfine interaction in individual dots.
Semiconductor double‐quantum dots represent an ideal system for studying the novel spin physics of localized spins. On each quantum dot when the number of electrons is odd and the net spin is 1/2, a strong coupling of this localized spin to conducting electrons in the leads gives rise to Kondo correlation. On the other hand, in the coupled double‐quantum‐dot if the inter‐dot antiferromagnetic interaction is strong, the two spins can form a correlated spin‐singlet state, quenching the Kondo effect. This competition between Kondo and antiferromagnetic correlation is studied in a controlled manner by tuning the inter‐dot tunnel coupling. Increasing the inter‐dot tunneling, we observe a continuous transition from a single‐peaked to a double‐peaked Kondo resonance in the differential conductance. On the double‐peaked side, the differential conductance becomes suppressed at zero source‐drain bias. The observed strong suppression of the differential conductance at zero bias provides direct evidence signaling the formation of an entangled spin‐singlet state. This evidence for entanglement and the tunability of our devices bode well for quantum computation applications.