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arXiv:1405.3085 · Applied Physics Letters

Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture

J. Basset, Anna Stockklauser, D.-D. Jarausch, Tobias Frey, Christian Reichl, W. Wegscheider, Andreas J. Wallraff, K. Ensslin, Thomas Ihn

Published Aug 11, 2014• 34 citations
arXivHTMLPDF

Abstract

We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.5×10−5 e/Hz. A low frequency 1/f type noise spectrum combined with a white noise level of 6.6×10−6 e2/Hz above 1 Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.

DOI
10.1063/1.4892828

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cond-mat.mes-hallCross-listedarXiv:2609.03650•Sep 4, 2026
We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.5×10−5 e/Hz. A low frequency 1/f type noise spectrum combined with a white noise level of 6.6×10−6 e2/Hz above 1 Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope of the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.
We investigate the dephasing mechanisms induced by the charge noise and microwave heating effect acting on a graphene double quantum dot (DQD) capacitively coupled to a microwave resonator. The charge noise is obtained from DC transport current, and its contribution to dephasing is simultaneously determined by the amplitude response of the microwave resonator. A lowfrequency 1/ f -type noise is demonstrated to be the dominant factor of the dephasing of graphene DQD. Furthermore, when the applied microwave power is larger than −90 dBm, the dephasing rate of graphene DQD increases rapidly with the increase of microwave power, and fluctuates slightly with the applied microwave power smaller than −90 dBm. Our results can be applied to suppress the impeditive influence on the dephasing of graphene-based devices associated with microwave input in the perspective investigations.
We have realized a hybrid solid-state quantum device in which a single-electron semiconductor double quantum dot is dipole coupled to a superconducting microwave frequency transmission line resonator. The dipolar interaction between the two entities manifests itself via dispersive and dissipative effects observed as frequency shifts and linewidth broadenings of the photonic mode respectively. A Jaynes-Cummings Hamiltonian master equation calculation is used to model the combined system response and allows for determining both the coherence properties of the double quantum dot and its interdot tunnel coupling with high accuracy. The value and uncertainty of the tunnel coupling extracted from the microwave read-out technique are compared to a standard quantum point contact charge detection analysis. The two techniques are found to be consistent with a superior precision for the microwave experiment when tunneling rates approach the resonator eigenfrequency. Decoherence properties of the double dot are further investigated as a function of the number of electrons inside the dots. They are found to be similar in the single-electron and many-electron regimes suggesting that the density of the confinement energy spectrum plays a minor role in the decoherence rate of the system under investigation.
Superconducting resonators coupled to semiconductor quantum dots provide a powerful platform to investigate light-matter interaction and decoherence mechanisms in solid-state quantum systems. Here we study a hybrid circuit quantum electrodynamics architecture consisting of a GaAs double-quantum-dot charge qubit capacitively coupled to a high-impedance, frequency-tunable SQUID-array resonator. By tuning the qubit transition frequency over the range ωq/2π∼3ω_\mathrm{q}/2π\sim 3ωq​/2π∼3-666 GHz, we perform frequency-resolved decoherence spectroscopy of the charge qubit across a broad energy window. Time-resolved measurements enable us to disentangle relaxation and pure dephasing processes and to identify distinct decoherence regimes as a function of qubit frequency. We find that at lower frequencies (≤4.5\leq 4.5≤4.5 GHz) dephasing dominates the qubit linewidth, whereas at higher frequencies energy relaxation becomes the leading contribution. The measured frequency dependence of the relaxation rate exhibits a cubic scaling, consistent with charge-qubit decay dominated by coupling to a piezoelectric phonon bath and providing frequency-resolved access to the corresponding phonon-induced spectral density. Our results show that hybrid semiconductor--superconducting circuits can serve as sensitive spectroscopic tools to probe microscopic decoherence mechanisms relevant for a wide range of hybrid quantum devices.
We demonstrate the realization of a hybrid solid-state quantum device, in which a semiconductor double quantum dot is dipole coupled to the microwave field of a superconducting coplanar waveguide resonator. The double dot charge stability diagram extracted from measurements of the amplitude and phase of a microwave tone transmitted through the resonator is in good agreement with that obtained from transport measurements. Both the observed frequency shift and linewidth broadening of the resonator are explained considering the double dot as a charge qubit coupled with a strength of several tens of MHz to the resonator.
Decoherence of a charge qubit is usually credited to charge noise in the environment. Here we show that charge noise may not be the limiting factor for the qubit coherence. To this end, we study coherence properties of a crystal-phase defined semiconductor nanowire double quantum dot (DQD) charge qubit strongly coupled to a high-impedance resonator using radio-frequency reflectometry. Response of this hybrid system is measured both at a charge noise sensitive operation point (with finite DQD detuning) and at an insensitive point (so-called sweet spot with zero detuning). A theoretical model based on the Jaynes-Cummings Hamiltonian matches the experimental results well and yields only a 10% difference in decoherence rates between the two cases, despite that the sensitivity to detuning charge noise differs by a factor of 5. Therefore, the charge noise is not limiting the coherence in this experiment with this type of semiconducting nanowire qubits. Published by the American Physical Society 2024
Bilayer graphene (BLG) quantum dots (QDs) are a promising platform for semiconductor qubits. However, the low-frequency charge noise that may ultimately limit coherence has remained largely unexplored. Here, we systematically characterize charge noise in gate-defined BLG QDs using transport-based noise spectroscopy. We extract a median amplitude of $ S_μ^{1/2} (1~\text{Hz}) = 1.16~μ\text{eV}/\sqrt{\text{Hz}}$, placing BLG well within the range reported for established semiconductor quantum-dot platforms. Across variations in charge occupation, confinement, source-drain bias, and charge-sensor operating conditions, neither the noise amplitude nor the spectral dependence shows a reproducible trend in electrostatic tuning, indicating that we extracted the intrinsic semiconductor noise. Consistent noise levels are further observed in double QDs and confirmed using an independent superconducting resonator-based dispersive readout. Extending the study to BLG devices incorporating transition metal dichalcogenide layers reveals no measurable charge noise increase in weakly proximitized QDs. These results validate BLG as a viable platform for coherent quantum information processing.