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arXiv:1402.6432 · Laser Physics Letters

All-optical controlled phase gate in quantum dot molecules

Libo Chen, Wen Yang

Published Aug 18, 2014• 19 citations
arXivHTMLPDF

Abstract

We propose a two-qubit optically controlled phase gate in quantum dot molecules via adiabatic passage and hole tunnelling. Our proposal combines the merits of the current generation of vertically stacked self-assembled InAs quantum dots and adiabatic passage. The simulation shows an implementation of the gate with a fidelity exceeding 0.98.

DOI
10.1088/1612-2011/11/10/105201

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We propose a two-qubit optically controlled phase gate in quantum dot molecules via adiabatic passage and hole tunnelling. Our proposal combines the merits of the current generation of vertically stacked self-assembled InAs quantum dots and adiabatic passage. The simulation shows an implementation of the gate with a fidelity exceeding 0.98.
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum optical control of two electron spin qubits in two vertically-stacked singly-charged InAs quantum dots coupled by coherent electron tunneling. With an applied magnetic field transverse to the growth direction, we construct a universal set of gates that corresponds to the possible Raman transitions between the spin states. We detail the procedure to decompose a given two-qubit unitary operation, so as to realize it with a successive application of up to 8 of these gates. We give the pulse shapes for the laser pulses used to implement this universal set of gates and demonstrate the realization of the two-qubit quantum Fourier transform with fidelity of 0.881 and duration of 414 ps. Our proposal therefore offers an accessible path to universal computation in quantum dot molecules and points to the advantages of using pulse shaping incoherent manipulation of optically active quantum dots to mitigate the negative effects of unintended dynamics and spontaneous emission.
We present a feasible scheme for performing an optically controlled phase gate between two conduction electron spin qubits in adjacent self-assembled quantum dots. Interaction between the dots is mediated by the tunneling of the valence hole state, which is activated only by applying a laser pulse of the right polarization and frequency. Combining the hole tunneling with the Pauli blocking effect, we obtain conditional dynamics for the two quantum dots, which is the essence of our gating operations. Our results are of explicit relevance to the recent generation of vertically stacked self-assembled InAs quantum dots, and show that by a design which avoids unintended dynamics the gate could be implemented in theory in the 10-ps range and with a fidelity over 90%. Our proposal therefore offers an accessible path to the demonstration of ultrafast quantum logic in quantum dots.
We propose an implementation of the two-qubit gate in a quantum dot spin qubit system which is immune to charge noise problems. Our proposed implementation, if it could be realized in a physical system, would have the advantage of being robust against uncertainties and fluctuations in the tunnel coupling and barrier gate voltage pulse area. The key idea is to introduce an auxiliary dot and use an analog to the stimulated Raman adiabatic passage pulse sequence in three-level atomic systems, often referred to in the context of electron transport in quantum dot systems as Coherent Tunneling by Adiabatic Passage. Spin-dependent tunneling opens the possibility of performing two-qubit gate operations by this method.
The ability to manipulate the spin states of charges confined in quantum dots (QDs) is essential for the realization of a quantum computer based on such spins. Here, we present experimentally realized electron spin qubit gates in a single self-assembled InAs QD using a combination of picosecond optical pulses, spin precession about an external DC magnetic field and optically generated geometric phases. Arbitrary unitary operations on the electron spin qubit may be constructed using a combination of optical pulses and either spin precession or the optically generated geometric phases.
Currently there is strong interest in realizing implementations of quantum computation and quantum cryptography in a solid state environment. One of the systems that are actively studied are semiconductor quantum dots (QDs). Due to their discrete energy level structure, they are often called artificial atoms, and they attract immediately interest of quantum information science since they allow to mimic the design developed for atomic physics systems such as ions in traps or atoms in cavities. However, despite of the similarities, one has to keep in main that any elementary excitation in a QD has a generic many-body character. An essential building block of a quantum processor is a quantum gate which entangles the states of two quantum bits. Recently it has been proposed that a pair of vertically aligned QDs could be used as an optically driven quantum gate: The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin," therefore we term them "isospin." Quantum mechanical tunneling between the dots rotates the "isospin" and leads to superposition of two quantum dot states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. The entanglement can be controlled by application of an electric field along the heterostructure growth direction. Here we present spectroscopic studies on single quantum dot molecules (QDMs) with different vertical separation between the dots that support the feasibility of this proposal. The comparison of the evolution of the excitonic recombination spectrum with the results of calculations allows us to demonstrate coherent tunneling of electrons and holes across the separating barrier and the formation of entangled exciton states. For a given barrier width, we find only small variations of the tunneling induced splitting between the entangled states demonstrating a good homogeneity within the obtained QDM ensembles.