Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:1312.2997 · Nature Communications

Optical signatures of silicon-vacancy spins in diamond

Tina Müller, Christian Hepp, Benjamin Pingault, Elke Neu, S. Gsell, M. Schreck, Hadwig Sternschulte, Doris Steinmüller‐Nethl, Christoph Becher, Mete Atatüre

Published Feb 18, 2014• 195 citations
arXivHTMLPDF
DOI
10.1038/ncomms4328

Related papers

Optical signatures of spin in silicon-vacancy centre in diamond

Benjamin Pingault, Tina Müller, Christian Hepp +3 more

The spin state of the silicon-vacancy centre in diamond and its optical accessibility have so far remained elusive. We here evidence spin-tagged fluorescence through resonant optical access to the electronic spin ½ of the centre.

•Jan 1, 2014•1 citation

Optical Control of the Silicon–Vacancy Center in Diamond

Michael Hanks, W. J. Munro, Kae Nemoto

International Conference on Solid State Devices and Materials (SSDM)•Sep 13, 2018•0 citations

Impact of strain and dark states on spectroscopic measurements of silicon-vacancy centers in diamond

Tommy Chin, Kesav V. Narayan, Imran Bashir +4 more

Negatively charged silicon-vacancy (SiV$^-$) centers in diamond offer an attractive platform for the development of many forms of quantum technology. However, questions remain in connection to how large ensembles of SiV$^-$ centers behave in concert. Here, we develop a computational model designed to simulate recent experiments where optical multidimensional coherent spectroscopy (MDCS) was used to examine a high-concentration sample of SiV$^-$ centers in diamond, revealing significant variations in spectral signature depending on the detection scheme. Simulation results reveal that strain effects are highly random in this system, with a characteristic axial strain of $2.8 \times 10^{-4}$ and a shear strain of $3.5 \times 10^{-5}$. They suggest in addition that highly strained centers (with values exceeding $1.5 \times 10^{-5}$) may become significantly decoupled from optical emission. The results have implications for the use of SiV$^-$ centers as quantum sensors.

quant-pharXiv:2608.11168•Aug 12, 2026•0 citations

Quantum optics with silicon-vacancy centers in diamond

Денис Дмитриевич Сукачев, Ruffin E. Evans, Alp Sipahigil +10 more

Bulletin of the American Physical Society•Jun 9, 2015•0 citations

Optical manipulation of single spins in diamond

Charles Santori, Philippe Tamarat, Philipp Neumann +9 more

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jan 1, 2007•0 citations

Resonant optical access to spin of silicon-vacancy centre in diamond

Benjamin Pingault, Tina Müller, Christian Hepp +3 more

The spin state of the silicon-vacancy centre in diamond and its optical accessibility have so far remained elusive. We here evidence spin-tagged fluorescence through resonant optical access to the electronic spin ½ of the centre.

Research in Optical Sciences•Jan 1, 2014•0 citations
Negatively charged silicon-vacancy (SiV−^-−) centers in diamond offer an attractive platform for the development of many forms of quantum technology. However, questions remain in connection to how large ensembles of SiV−^-− centers behave in concert. Here, we develop a computational model designed to simulate recent experiments where optical multidimensional coherent spectroscopy (MDCS) was used to examine a high-concentration sample of SiV−^-− centers in diamond, revealing significant variations in spectral signature depending on the detection scheme. Simulation results reveal that strain effects are highly random in this system, with a characteristic axial strain of 2.8×10−42.8 \times 10^{-4}2.8×10−4 and a shear strain of 3.5×10−53.5 \times 10^{-5}3.5×10−5. They suggest in addition that highly strained centers (with values exceeding 1.5×10−51.5 \times 10^{-5}1.5×10−5) may become significantly decoupled from optical emission. The results have implications for the use of SiV−^-− centers as quantum sensors.