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arXiv:1302.3807 · Scientific Reports

On-chip time resolved detection of quantum dot emission using integrated superconducting single photon detectors

G. Reithmaier, Stefan Lichtmannecker, Thorsten Reichert, Peter Hasch, Kai Müller, Max Bichler A, R. Gross, Jonathan James Finley

Published May 28, 2013• 110 citations
arXivHTMLPDF

Abstract

We report the routing of quantum light emitted by self-assembled InGaAs quantum dots (QDs) into the optical modes of a GaAs ridge waveguide and its efficient detection on-chip via evanescent coupling to NbN superconducting nanowire single photon detectors (SSPDs). The waveguide coupled SSPDs primarily detect QD luminescence, with scattered photons from the excitation laser onto the proximal detector being negligible by comparison. The SSPD detection efficiency from the evanescently coupled waveguide modes is shown to be two orders of magnitude larger when compared with operation under normal incidence illumination, due to the much longer optical interaction length. Furthermore, in-situ time resolved measurements performed using the integrated detector show an average QD spontaneous emission lifetime of 0.95 ns, measured with a timing jitter of only 72 ps. The performance metrics of the SSPD integrated directly onto GaAs nano-photonic hardware confirms the strong potential for on-chip few-photon quantum optics using such semiconductor-superconductor hybrid systems.

DOI
10.1038/srep01901

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We report the routing of quantum light emitted by self-assembled InGaAs quantum dots (QDs) into the optical modes of a GaAs ridge waveguide and its efficient detection on-chip via evanescent coupling to NbN superconducting nanowire single photon detectors (SSPDs). The waveguide coupled SSPDs primarily detect QD luminescence, with scattered photons from the excitation laser onto the proximal detector being negligible by comparison. The SSPD detection efficiency from the evanescently coupled waveguide modes is shown to be two orders of magnitude larger when compared with operation under normal incidence illumination, due to the much longer optical interaction length. Furthermore, in-situ time resolved measurements performed using the integrated detector show an average QD spontaneous emission lifetime of 0.95 ns, measured with a timing jitter of only 72 ps. The performance metrics of the SSPD integrated directly onto GaAs nano-photonic hardware confirms the strong potential for on-chip few-photon quantum optics using such semiconductor-superconductor hybrid systems.
Quantum optical circuits can be used to generate, manipulate, and exploit nonclassical states of light to push semiconductor based photonic information technologies to the quantum limit. Here, we report the on-chip generation of quantum light from individual, resonantly excited self-assembled InGaAs quantum dots, efficient routing over length scales ≥1 mm via GaAs ridge waveguides, and in situ detection using evanescently coupled integrated NbN superconducting single photon detectors fabricated on the same chip. By temporally filtering the time-resolved luminescence signal stemming from single quantum dots we use the quantum optical circuit to perform time-resolved excitation spectroscopy on single dots and demonstrate resonance fluorescence with a line-width of 10 ± 1 μeV; key elements needed for the use of single photons in prototypical quantum photonic circuits.
We fabricate an integrated photonic circuit with emitter, waveguide and detector on one chip, based on a hybrid superconductor-semiconductor system. We detect photoluminescence from self-assembled InGaAs quantum dots on-chip using NbN superconducting nanowire single photon detectors. Using the fast temporal response of these detectors we perform time-resolved studies of non-resonantly excited quantum dots. By introducing a temporal filtering to the signal, we are able to resonantly excite the quantum dot and detect its resonance fluorescence on-chip with the integrated superconducting single photon detector.
We report the observation of photon antibunching from a single, self-assembled InGaAs quantum dot (QD) at temperatures up to 135 K. The second-order intensity correlation,g(2)g^{(2)}g(2)(0), is less than 0.260$\pm0.024fortemperaturesupto100K.At120K,0.024 for temperatures up to 100 K. At 120 K,0.024fortemperaturesupto100K.At120K,g^{(2)}(0)increasestoabout0.471,whichisslightlylessthanthesecond−orderintensitycorrelationexpectedfromtwoindependentsingleemitters.Inaddition,wecharacterizetheperformanceofasuperconductingsinglephotondetector(SSPD)basedonananopatternedniobiumnitridewirethatexhibits68(0) increases to about 0.471, which is slightly less than the second-order intensity correlation expected from two independent single emitters. In addition, we characterize the performance of a superconducting single photon detector (SSPD) based on a nanopatterned niobium nitride wire that exhibits 68(0)increasestoabout0.471,whichisslightlylessthanthesecond−orderintensitycorrelationexpectedfromtwoindependentsingleemitters.Inaddition,wecharacterizetheperformanceofasuperconductingsinglephotondetector(SSPD)basedonananopatternedniobiumnitridewirethatexhibits68\pm3−pstimingjitterandlessthan100−Hzdarkcountratewithadetectionefficiency(DE)ofupto23-ps timing jitter and less than 100-Hz dark count rate with a detection efficiency (DE) of up to 2% at 902 nm. This detector is used to measure spontaneous emission lifetimes of semiconductor quantum wells (QWs) emitting light at wavelengths of 935 and 1245 nm. The sensitivity to wavelengths longer than 13−pstimingjitterandlessthan100−Hzdarkcountratewithadetectionefficiency(DE)ofupto2\mumandtheGaussiantemporalresponseofthissuperconductingdetectorpresentclearadvantagesovertheconventionaldetectortechnologies.WealsousethisdetectortocharacterizetheemissionfromasingleInGaAsQDembeddedinamicropillarcavity,measuringaspontaneousemissionlifetimeof370psandam and the Gaussian temporal response of this superconducting detector present clear advantages over the conventional detector technologies. We also use this detector to characterize the emission from a single InGaAs QD embedded in a micropillar cavity, measuring a spontaneous emission lifetime of 370 ps and amandtheGaussiantemporalresponseofthissuperconductingdetectorpresentclearadvantagesovertheconventionaldetectortechnologies.WealsousethisdetectortocharacterizetheemissionfromasingleInGaAsQDembeddedinamicropillarcavity,measuringaspontaneousemissionlifetimeof370psandag^{(2)}(0)of0.24(0) of 0.24(0)of0.24\pm$0.03.
Fast and efficient detection of single photons with high timing accuracy is a crucial requirement in most quantum optics experiments and enables novel sensing and imaging solutions. Superconducting nanowire single-photon detectors (SNSPD) achieve technology-leading performance in terms of detection efficiency, dark count rate, timing jitter, and detector dead times. However, conventional SNSPDs with high system detection efficiency typically rely on resonant enhancement of the absorption efficiency, thus only achieving attractive detector benchmarks over narrow spectral windows. Waveguide-integrated SNSPDs allow for leveraging the wideband material absorption in superconducting nanowires by absorbing light in a traveling-wave geometry but have been limited to low system detection efficiencies due to interface losses when coupling to optical fibers. Here, we show how high system detection efficiencies of 22%–73% are realized over a broad wavelength range from 532 nm to 1640 nm in a single waveguide-integrated SNSPD device. We accomplish efficient coupling between optical fibers and waveguide-integrated nanowire detectors by employing a 3D interface, produced in direct laser writing, that relies on total internal reflection for achieving a broad transmission bandwidth. We further find low timing jitter of 25.7 ps and detector decay times of 9.8 ns, allowing for single-photon counting with high repetition rates up to 100 MHz. Our work paves the way for an efficient single-photon detector solution that combines the spectral requirements of an extremely wide range of quantum optics experiments in a single device. The coupling approach and SNSPD-integration with nanophotonic circuits are further well-suited for realizing large-scale detector arrays.
Single photon detectors are a vital part of many emerging technologies which harness the quantum properties of light to benefit the fields of communication, computation and sensing. Superconducting nanowire single photon detectors (SNSPDs) offer high detection efficiency, low dark count rates, low timing jitter, and infrared sensitivity that are required by the most demanding single photon counting applications. This thesis presents SNSPDs fabricated and tested at the University of Glasgow that are integrated with optical structures which enable enhanced detection efficiency and integration with waveguide circuit technology. The monolithic integration of waveguide circuit components presents a route towards realisation of an optical quantum information processor that has the stability and scalability to perform the demanding tasks of quantum computation. A novel process is introduced for incorporating superconducting detectors with single mode gallium arsenide waveguides and quantum dot single photon sources. Together these elements would enable the generation of quantum states of light which could be manipulated and detected on a single chip. Detectors are patterned in NbTiN thin superconducting films on to suspended nanobeam waveguides with better than 50 nm alignment accuracy. Low temperature electrical and optical testing confirms the detectors’ single photon sensitivity under direct illumination as well as to waveguide coupled light. Measured detectors were found to have internal registering efficiencies of 6.8 ± 2.4%. Enhancing absorption of photons into thin superconducting films is vital to the creation of high efficiency superconducting single photon detectors. Fabricating an SNSPD on a dielectric mirror creates a partial cavity that can be tailored to enhance detection of light at specific wavelengths. Devices have been fabricated and tested in this thesis with enhanced detection efficiency at infrared and visible wavelengths for quantum cryptography, remote sensing and life science applications. Detectors fabricated in NbTiN on GaAs/AlGaAs Bragg mirrors exhibited a system detection efficiency of 1.5% at 1500 nm wavelength for the best device measured. SNSPDs were also fabricated in NbN on aperiodic dielectric mirrors with a range of different bandwidths. A peak system detection efficiency of 82.7% at 808 nm wavelength was recorded.
Quantum photonic integration is one of the leading approaches for enabling the implementation of quantum simulation and computing at the scale of tens to hundreds of photons. Quantum photonic integrated circuits require the monolithic integration of single-photon sources and passive circuit elements, such as waveguides and couplers, with single-photon detectors. A promising approach for on-chip single-photon detection is the use of superconducting nanowires on top of semiconductor waveguides. Here, we present state-of-the-art NbN films on GaAs for the realization of waveguide superconducting single-photon detectors, suitable for integration with sources and linear optical circuits. Based on the measured optical properties, we propose a new design which allows high absorptance for short nanowires in order to increase the integration density in a quantum photonic chip. Finally, we review recent results on integrated single-photon and photon-number-resolving detectors, and integrated autocorrelators.