We study the circularly polarized photoluminescence of negatively charged (${\mathrm{NV}}^{\ensuremath{-}}$) and neutral (
NV0) nitrogen-vacancy ensembles and neutral vacancies (
V0) in diamond crystals exposed to magnetic fields of up to 10 T. We determine the orbital and spin Zeeman splitting as well as the energetic ordering of their ground and first-excited states. The spin-triplet and -singlet states of the ${\mathrm{NV}}^{\ensuremath{-}}$ are described by an orbital Zeeman splitting of about 9 $\ensuremath{\mu}\mathrm{eV}/\mathrm{T}$, which corresponds to a positive orbital
g-factor of
gL=0.164 under application of the magnetic field along the (001) and (111) crystallographic directions, respectively. The zero-phonon line (ZPL) of the ${\mathrm{NV}}^{\ensuremath{-}}$ singlet is defined as a transition from the ${}^{1}{E}^{\ensuremath{'}}$ states, which are split by ${g}_{L}{\ensuremath{\mu}}_{\text{B}}B$, to the
1A1 state. The energies of the zero-phonon triplet transitions show a quadratic dependence on intermediate magnetic field strengths, which we attribute to a mixing of excited states with nonzero orbital angular momentum. Moreover, we identify slightly different spin Zeeman splittings in the ground (gs) and excited (es) triplet states, which can be expressed by a deviation between their spin
g-factors: ${g}_{S,\text{es}}={g}_{S,\text{gs}}+\mathrm{\ensuremath{\Delta}}g$ with values of $\mathrm{\ensuremath{\Delta}}g=0.014$ and 0.029 in the (001) and (111) geometries, respectively. The degree of circular polarization of the ${\mathrm{NV}}^{\ensuremath{-}}$ ZPLs depends significantly on the temperature, which is explained by an efficient spin-orbit coupling of the excited states mediated through acoustic phonons. We further demonstrate that the sign of the circular polarization degree is switched under rotation of the diamond crystal. A weak Zeeman splitting similar to $\mathrm{\ensuremath{\Delta}}g{\ensuremath{\mu}}_{\text{B}}B$ measured for the ${\mathrm{NV}}^{\ensuremath{-}}$ ZPLs is also obtained for the
NV0 zero-phonon lines, from which we conclude that the ground state is composed of two optically active states with compensated orbital contributions and opposite spin-1/2 momentum projections. The zero-phonon lines of the
V0 show Zeeman splittings and degrees of the circular polarization with opposite signs. The magnetophotoluminescence data indicate that the electron transition from the
1T2 states to the
1A ground state defines the zero-phonon emission at 1.674 eV, while the $^{1}T_{2}\ensuremath{\rightarrow}^{1}E$ transition is responsible for the zero-phonon line at 1.666 eV. The
1T2 (
1E) states are characterized by an orbital Zeeman splitting with
gL=0.071 (0.128).
The nitrogen-vacancy (NV) lattice defect in diamond, consisting of an N substitutional atom and an adjacent C vacancy, is commonly observed in two charge states, negative (NV−) and neutral (NV0). The NV− defect exhibits spin state-dependent fluorescence and is, therefore, amenable to optical methods for spin-state readout, while the NV0 is not. Hence, the NV− defect is much more useful for quantum sensing and quantum information processing. However, only NV0 electroluminescence has been observed, even from centers showing NV− in photoluminescence. In the present work, we use first-principles electronic structure calculations to determine adiabatic charge transition levels for the conversion of NV− to NV0 in the presence of substitutional N or P impurities, which provide the charge of the NV− center. We find that the adiabatic charge transition levels in the presence of such impurities lie at energies close to or lower than the zero-phonon line of the NV− center and that these energies only decrease as the concentration of N donors increases. This work, therefore, elucidates the absence of observed electroluminescence from the NV− and proposes a path toward observation of the phenomenon.
The negatively charged nitrogen-vacancy $({\mathrm{NV}}^{\ensuremath{-}})$ center in diamond is a promising candidate for many quantum applications. Here, we examine the splitting and broadening of the center's infrared (IR) zero-phonon line (ZPL). We develop a model for these effects that accounts for the strain induced by photodependent microscopic distributions of defects. We apply this model to interpret observed variations of the IR ZPL shape with temperature and photoexcitation conditions. We identify an anomalous temperature-dependent broadening mechanism and that defects other than the substitutional nitrogen center significantly contribute to strain broadening. The former conclusion suggests the presence of a strong Jahn-Teller effect in the center's singlet levels and the latter indicates that major sources of broadening are yet to be identified. These conclusions have important implications for the understanding of the center and the engineering of diamond quantum devices. Finally, we propose that, once the major sources of broadening are identified, the IR ZPL has the potential to be a sensitive spectroscopic tool for probing microscopic strain fields and performing defect tomography.
Abstract Nitrogen-vacancy (NV) defect centers in diamond are key to applications in quantum sensing and quantum computing. They create localized electronic states in the diamond lattice with distinct population relaxation pathways following photoexcitation that ultimately enable its unique properties. The defect is known to exist in two charge states: neutral and negative, with respectively one and two known optically-active electronic transitions. Here, we report on the observation of a large number of hitherto undiscovered excited electronic states in both charge states as evidenced by distinct optical transitions in the infrared to ultraviolet part of the spectrum. These transitions are observed by monitoring the electronic relaxation of NV centers after photoexcitation using transient absorption spectroscopy, directly probing transient phenomena occurring on timescales from femtoseconds to microseconds. We also for the first time probed the electron transfer dynamics from the 3 E state of NV− to nearby single-substitutional nitrogen defects (N s ) that leads to the well-known effect of NV photoluminescence quenching.
The positively charged nitrogen vacancy (NV+) center in diamond has been traditionally treated as a dark state due to the experimental lack of an optical signature. Recent computational studies have shown that it is possible for the NV+ defect to have an excited state transition equivalent to that of the negatively charged (NV−) center, but no photoluminescence (PL) predictions have been reported so far. We report the first ab initio calculation showing that the NV+ center presents quantum emission, with zero phonon line at 765 nm and a non-zero transition dipole moment, approximately one quarter of the transition dipole moment of NV−. We calculate the energy levels of the multielectron states under the time-dependent density functional theory (singlet and triplet E states), and using our recently developed frequency cutoff method, we predict the full PL spectrum. Our results suggest that this state cannot be considered intrinsically “dark” and charge specific quenching mechanisms should be investigated as the cause of the lack of optical activity in experimental characterizations.
The neutrally charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency optical spin initialization with long spin lifetimes (${T}_{2}\ensuremath{\approx}1$ ms at 4 K) and up to 90% of optical emission into its 946-nm zero-phonon line. However, the electronic structure of
SiV0 is poorly understood, making further exploitation difficult. Performing photoluminescence spectroscopy of
SiV0 under uniaxial stress, we find the previous excited electronic structure of a single
3A1u state is incorrect, and identify instead a coupled $^{3}E_{u}\text{\ensuremath{-}}^{3}A_{2u}$ system, the lower state of which has forbidden optical emission at zero stress and efficiently decreases the total emission of the defect. We propose a solution employing finite strain to define a spin-photon interface scheme using
SiV0 .