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arXiv:1210.0814 · Journal of the Optical Society of America B

Microresonator-based all-optical transistor

B. D. Clader, S. M. Hendrickson

Published Apr 23, 2013• 10 citations
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Abstract

We present theoretical estimates for a low-loss, all-optical transistor using a microresonator device whose fields interact evanescently with rubidium vapor. We use a four-level, electromagnetically induced absorption scheme to couple the light fields of the transistor. We show results indicating that a weak control beam with less than single-photon intensities can switch a much stronger signal beam with switching contrast of greater than 25 dB and loss less than 0.5 dB.

DOI
10.1364/josab.30.001329

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We present theoretical estimates for a low-loss, all-optical transistor using a microresonator device whose fields interact evanescently with rubidium vapor. We use a four-level, electromagnetically induced absorption scheme to couple the light fields of the transistor. We show results indicating that a weak control beam with less than single-photon intensities can switch a much stronger signal beam with switching contrast of greater than 25 dB and loss less than 0.5 dB.
We present theoretical results of a low-loss all-optical switch based on electromagnetically induced transparency and the quantum Zeno effect in a microdisk resonator. We show that a control beam can modify the atomic absorption of the evanescent field which suppresses the cavity field buildup and alters the path of a weak signal beam. We predict more than 35 dB of switching contrast with less than 0.1 dB loss using just 2 μW of control-beam power for signal beams with less than single photon intensities inside the cavity.
An all-optical transistor (AOT) is a device in which one light beam can efficiently manipulate another. It is the foundational component of an all-optical communication network. An AOT that can operate at ultralow light levels is especially attractive for its potential application in the quantum information field. Here, we demonstrate an AOT driven by a weak light beam with an energy density of 2.5 × 10−5 photons/(λ2/2π) (corresponding to 6 yJ/(λ2/2π) and about 800 total photons) using the double-Λ four-wave mixing process in hot rubidium vapor. This makes it a promising candidate for ultralow-light-level optical communication and quantum information science.
Low-contrast all-optical Zeno switching has been demonstrated in a Si3{}_{3}3​N4{}_{4}4​ microdisk resonator coupled to warm atomic vapor. The device is based on the suppression of the resonant microcavity field buildup due to nondegenerate two-photon absorption. This experiment used one beam in a resonator and one in free space due to limitations related to device physics. These results suggest that a similar scheme with both beams resonant in the cavity would correspond to input power levels below 150 nW.
We propose a design of an all-optical transistor based on a one-dimensional photonic-crystal cavity doped with a four-level N\mathsf{N}N-type active Raman gain medium. The calculated results show that in a photonic-crystal cavity of this kind transmission and reflection of the probe (Raman) beam are strongly dependent on the optical switching power. Transmission and reflection of the probe beam can be greatly amplified or attenuated. Therefore the optical switching field can serve as a gate field of the transistor to effectively control propagation of the weak probe field. It is shown that the group velocity of the probe pulse can be controlled in the range from subluminal (slow light) to superluminal (fast light).