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arXiv:1112.2010 · Light Science & Applications

Memory-enhanced noiseless cross-phase modulation

Mahdi Hosseini, S. Rebić, Ben M. Sparkes, Jason Twamley, B. C. Buchler, Ping Koy Lam

Published Dec 7, 2012• 58 citations
arXivHTMLPDF

Abstract

Large nonlinearity at the single-photon level can pave the way for the implementation of universal quantum gates. However, realizing large and noiseless nonlinearity at such low light levels has been a great challenge for scientists in the past decade. Here, we propose a scheme that enables substantial nonlinear interaction between two light fields that are both stored in an atomic memory. Semiclassical and quantum simulations demonstrate the feasibility of achieving large cross-phase modulation (XPM) down to the single-photon level. The proposed scheme can be used to implement parity gates from which CNOT gates can be constructed. Furthermore, we present a proof of principle experimental demonstration of XPM between two optical pulses: one stored and one freely propagating through the memory medium. Researchers have developed a new technique that shows promise for constructing optical quantum logic gates. Theoretical simulations performed by Mahdi Hosseini and co-workers from the Australian National University and Macquarie University in Australia show that inducing cross-phase modulation between two single-photon light fields stored in a rubidium atomic memory should provide large phase shifts and thus allow the realization of parity gates and CNOT gates, both of which are needed for quantum computing. The researchers estimate that using cold atoms confined in a dipole trap and short-duration single-photon wavepackets should make it possible to realize phase shifts of the order of 10 mrad — orders of magnitude larger than schemes that employ electromagnetically induced transparency.

DOI
10.1038/lsa.2012.40

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Large nonlinearity at the single-photon level can pave the way for the implementation of universal quantum gates. However, realizing large and noiseless nonlinearity at such low light levels has been a great challenge for scientists in the past decade. We present a proposal for using quantum memory to enhance the cross-phase modulation (XPM) of two optical fields. Our memory, which is based on the gradient echo memory (GEM) scheme, maps the optical fields into Fourier transformed polaritonic excitations in an atomic ensemble. We show that nonlinear interactions can be induced in GEM. Due to the slowing down and subsequent storage of light fields within a memory, nonlinear interaction time between the fields can be extended resulting in an enhancement of the effective nonlinearity. We present results showing noiseless cross-phase modulations and discuss plans to further increase the cross-phase modulation strength to a level useful for implementing quantum gates.
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We experimentally demonstrate a low-light-level cross-phase-modulation (XPM) scheme based on the light-storage technique in laser-cooled 87Rb atoms. The proposed scheme can achieve a similar phase shift and has the same figure of merit as one using static electromagnetically induced transparency under the constant coupling field. Nevertheless, the phase shift and the energy loss of a probe pulse induced by a signal pulse are neither influenced by the coupling intensity nor by the atomic optical density in the light-storage XPM scheme. This scheme enhances the flexibility of the experiment and makes possible conditional phase shifts on the order of pi with single photons.
Abstract Strong nonlinear interactions between single photons have important applications in optical quantum information processing. Demonstrations of these interactions in cold atomic ensembles have largely been limited to exploiting slow light generated using electromagnetically induced transparency (EIT). However, these EIT implementations have limited achievable phase shifts due to spontaneous emission. Here, we demonstrate and characterize a scheme free from these limitations using gradient echo memory with inferred single photon phase shifts of 0.07 ± 0.02 μrad. Excellent agreement with theoretical modelling was observed. Degradation of memory efficiency was observed for large phase shifts but strategies to overcome that are presented.
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