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arXiv:1101.0361 · Physical Review B

Current-voltage characteristics of tunnel Josephson junctions with a ferromagnetic interlayer

Andrey S. Vasenko, Shiro Kawabata, Alexander A. Golubov, M. Yu. Kupriyanov, Claudine Lacroix, F. S. Bergeret, F. W. J. Hekking

Published Jul 21, 2011• 28 citations
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Abstract

We present a quantitative study of the current-voltage characteristics (CVC) of diffusive superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions. In order to obtain the CVC we calculate the density of states (DOS) in the F/S bilayer for arbitrary length of the ferromagnetic layer, using quasiclassical theory. For a ferromagnetic layer thickness larger than the characteristic penetration depth of the superconducting condensate into the F layer, we find an analytical expression which agrees with the DOS obtained from a self-consistent numerical method. We discuss general properties of the DOS and its dependence on the parameters of the ferromagnetic layer. In particular we focus our analysis on the DOS oscillations at the Fermi energy. Using the numerically obtained DOS we calculate the corresponding CVC and discuss their properties. Finally, we use CVC to calculate the macroscopic quantum tunneling (MQT) escape rate for the current biased SIFS junctions by taking into account the dissipative correction due to the quasiparticle tunneling. We show that the influence of the quasiparticle dissipation on the macroscopic quantum dynamics of SIFS junctions is small, which is an advantage of SIFS junctions for superconducting qubits applications.

DOI
10.1103/physrevb.84.024524

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We present a quantitative study of the current-voltage characteristics (CVC) of diffusive superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions. In order to obtain the CVC we calculate the density of states (DOS) in the F/S bilayer for arbitrary length of the ferromagnetic layer, using quasiclassical theory. For a ferromagnetic layer thickness larger than the characteristic penetration depth of the superconducting condensate into the F layer, we find an analytical expression which agrees with the DOS obtained from a self-consistent numerical method. We discuss general properties of the DOS and its dependence on the parameters of the ferromagnetic layer. In particular we focus our analysis on the DOS oscillations at the Fermi energy. Using the numerically obtained DOS we calculate the corresponding CVC and discuss their properties. Finally, we use CVC to calculate the macroscopic quantum tunneling (MQT) escape rate for the current biased SIFS junctions by taking into account the dissipative correction due to the quasiparticle tunneling. We show that the influence of the quasiparticle dissipation on the macroscopic quantum dynamics of SIFS junctions is small, which is an advantage of SIFS junctions for superconducting qubits applications.
Abstract We investigate tunnel ferromagnetic Josephson junctions based on Superconductor-Insulator-thin superconductor-Ferromagnet-Superconductor multilayers. A comparative study of their electrodynamic properties is performed for junctions with niobium and aluminum (Al) electrodes, featuring different ferromagnetic interlayer materials and lateral dimensions ranging from the micrometric to the submicrometric scale. The parameters extracted from the fitting of the current-voltage characteristics using the tunnel junction microscopic model are found to be consistent with those independently estimated from switching current distribution measurements. Submicrometric Al-based devices exhibit electrodynamic properties comparable to those implemented in state-of-the-art transmon qubits and display clear signatures of quantum phase diffusion. The strong agreement between transport modelling and escape dynamics establishes a robust framework for describing hybrid ferromagnetic Josephson junctions consistent with their energy scales and supports their potential integration into superconducting quantum and classical digital circuits.
We present a systematic study of the temperature-dependent transport properties of Nb- and Al-based superconductor--insulator--thin superconductor--ferromagnet--superconductor (SIsFS) Josephson junctions. By varying the superconducting material and the thickness of the intermediate superconducting layer, we identify three distinct transport regimes: a tunnel-dominated SIS-like regime, a temperature-driven crossover, and a complex weak-link regime. A unified Usadel-based description connects these regimes through the self-consistent pair potential of the intermediate s-layer. While for Al-based devices an SIS-like transport regime is observed, a self-consistent calculation of the s/F/S proximity electrode, combined with perturbative tunnel coupling to the outer electrode, accounts for Nb devices with different thickness of the superconducting interlayer. The calculation places the 10-nm-interlayer sample in a proximity-supported, strongly suppressed s state, close to the SInFS limit in which the interlayer is effectively driven normal (\textit{n}). A reduced nonlinear long-junction description captures the same limiting physics. The evolution of I_cR_N(T) thereby provides a direct experimental signature of the three transport regimes. Beyond the fundamental interest, the results establish practical design guidelines: Nb junctions with sufficiently thick s interlayers are well suited for high-speed cryogenic memory elements and tunable superconducting parametric amplifiers, while Al junctions are natural candidates for coherent superconducting quantum circuits
We theoretically investigate the macroscopic quantum dynamics of a $\ensuremath{\pi}$ junction with a superconductor (S) and a multiferroic material or a ferromagnetic insulator (FI). By deriving the effective action from a microscopic Hamiltonian, a $\ensuremath{\pi}$-junction qubit (a S-FI-S superconducting quantum interference device ring) is proposed. In this qubit, a quantum two-level system is spontaneously generated and the effect of the quasiparticle dissipation is found to be very weak. These features make it possible to realize a quiet qubit with high coherency. We also investigate macroscopic quantum tunneling (MQT) in current-biased S-FI-S $\ensuremath{\pi}$ junctions and show that the influence of the quasiparticle dissipation on MQT is negligibly small.
We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlOx/PdNi/Nb) π-Josephson junctions. An analysis of Fiske modes up to about 400 GHz provides information on the junction quality factor and the relevant damping mechanisms. High quality factors of up to 30 around 200 GHz have been achieved. They allow for the study of the dynamic properties of the junctions, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. At mK temperature, the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with ferromagnetic interlayer.
We present a model analysis for the current-voltage (I-V) characteristics of Josephson junctions having superconductor-insulator-superconductor (SIS) structure. The numerical result for the V m value, which is the product of the maximum supercurrent and the observed subgap resistance, shows a marked decrease with increasing junction critical current density (J c). The marked decrease is independent of leak current. Increasing J c reduces the junction capacitance C J and enlarges the amplitude of the junction voltage oscillation. Nonlinearity of the quasiparticle resistance restricts the voltage oscillation amplitude to the gap voltage, which results in the rapid decrease of the V m value. In this paper, we introduce a sinusoidal oscillation model for the junction voltage, and derive the approximated expressions for the V m value. The model approximation results agree well with the numerical results.
We report experimental results on characteristics of SFIFS junctions and multi-terminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS junctions serve as injectors in the SFIFSIS devices which have transistor-like properties; for this reason we call them Superconducting-Ferromagnetic Transistors (SFTs). We have found the F (Ni) thickness at which the SFIFS current-voltage characteristic (CVC) becomes linear. Furthermore, we investigated the DC and AC characteristics of SFTs of two types: ordinary devices with a single acceptor (SIS) junction, and devices with a double acceptor. In the first case, we focused on studying the influence of the injection current through the SFIFS junction on the maximum Josephson current of the SIS acceptor. For devices of the second type, we studied voltage amplification properties when the operating point was chosen in the sub-gap region of the acceptor CVC. By applying an AC signal (in the kHz range) while biasing the injector (SFIFS) junction with a constant DC current, we observed a voltage gain above 25 on the double acceptor. In the reverse transmission experiment, we applied DC current and an AC modulation to the acceptor junction and, within the accuracy of the experiment, observed no response on the injector junction, which implies an excellent input-output isolation in our SFIFSIS devices. The experiments indicate that, after optimization of the device parameters, they can be used as input/output isolators and amplifiers for memory, digital, and RF applications.