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arXiv:1011.4428 · Physics Letters A

Bosonic enhancement of spontaneous emission near an interface

Jürgen Schiefele, Carsten Henkel

Published Nov 27, 2010• 4 citations
arXivHTMLPDF
DOI
10.1016/j.physleta.2010.11.058

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Optics Letters•Jul 1, 2004•11 citations
The spontaneous emission rate of an atom in a dielectric system with a single interface is calculated using quantum electrodynamics and analyzed using ideas from closed-orbit theory. The spontaneous emission rate is shown to exhibit a damping oscillation as the atomic distance from the interface is varied. The calculated frequency of the oscillation matches very well with the prediction from closed-orbit theory. This study provides a different perspective on the spontaneous emission of atoms in the presence of environments.
The spontaneous emission (SE) progress of polarized atoms in a stratified structure of air–dielectric(D0)–metal(M)–dielectric(D1)–air can be controlled effectively by changing the thickness of the D1 layer and rotating the polarized direction of atoms. It is found that the normalized SE rate of atoms located inside the D0 layer crucially depends on the atomic position and the thickness of the D1 layer. When the atom is located near the D0–M interface, the normalized atomic SE rate as a function of the atomic position is abruptly onset for the thin D1 layer. However, with the increasing thickness of the D1 layer, the corresponding curve profile exhibits plateau and stays nearly unchanged. The substantial change of the SE rate stems from the excitation of the surface plasmon polaritons in metal-dielectric interface, and the feature crucially depends on the thickness of D1 layer. If atoms are positioned near the D0–air interface, the substantial variation of the normalized SE rate appears when rotating the polarized direction of atoms. These findings manifest that the atomic SE processes can be flexibly controlled by altering the thickness of the dielectric layer D1 or rotating the orientation of the polarization of atoms.
Spontaneous emission in the presence of complex nanostructures is discussed by use of a calculational scheme that permits us to deal with interfaces of arbitrary shape. Control over the field associated with the emission is shown to be attainable. In particular, decay rates are offered for geometries that lead to focusing and collimation of near- and far-field distributions. Emission from axially symmetric gratings is shown to lead to narrow angular distributions of emission, and focusing at the foci of dielectric ellipsoids is achieved for dimensions comparable with the wavelength. In the latter case the total emission rate for two atoms in an ellipsoidal cavity is shown to be enhanced in a way that deviates from the predictions of the Dicke effect by means of intermediate- and far-field contributions.