We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials.
We discuss transport and localization properties on the insulating side of the disorder dominated superconductor-insulator transition, described in terms of the dirty boson model. Analyzing the spectral properties of the interacting bosons in the absence of phonons, we argue that the Bose glass phase admits three distinct regimes. For strongest disorder the boson system is a fully localized, perfect insulator at any temperature. At smaller disorder, only the low temperature phase exhibits perfect insulation while delocalization takes place above a finite temperature. We argue that a third phase must intervene between these perfect insulators and the superconductor. This conducting Bose glass phase is characterized by a mobility edge in the many body spectrum, located at finite energy above the ground state. In this insulating regime purely electronically activated transport occurs, with a conductivity following an Arrhenius law at asymptotically low temperatures, while a tendency to superactivation is predicted at higher T. These predictions are in good agreement with recent transport experiments in highly disordered films of superconducting materials.
Disorder and interactions both play crucial roles in quantum transport. Decades ago, Mott showed that electron-electron interactions can lead to insulating behavior in materials that conventional band theory predicts to be conducting. Soon thereafter, Anderson demonstrated that disorder can localize a quantum particle through the wave interference phenomenon of Anderson localization. Although interactions and disorder both separately induce insulating behavior, the interplay of these two ingredients is subtle and often leads to surprising behavior at the periphery of our current understanding. Modern experiments probe these phenomena in a variety of contexts (e.g. disordered superconductors, cold atoms, photonic waveguides, etc.); thus, theoretical and numerical advancements are urgently needed. In this thesis, we report progress on understanding two contexts in which the interplay of disorder and interactions is especially important. The first is the so-called “dirty” or random boson problem. In the past decade, a strong-disorder renormalization group (SDRG) treatment by Altman, Kafri, Polkovnikov, and Refael has raised the possibility of a new unstable fixed point governing the superfluid-insulator transition in the one-dimensional dirty boson problem. This new critical behavior may take over from the weak-disorder criticality of Giamarchi and Schulz when disorder is sufficiently strong. We analytically determine the scaling of the superfluid susceptibility at the strong-disorder fixed point and connect our analysis to recent Monte Carlo simulations by Hrahsheh and Vojta. We then shift our attention to two dimensions and use a numerical implementation of the SDRG to locate the fixed point governing the superfluid-insulator transition there. We identify several universal properties of this transition, which are fully independent of the microscopic features of the disorder. The second focus of this thesis is the interplay of localization and interactions in systems with high energy density (i.e., far from the usual low energy limit of condensed matter physics). Recent theoretical and numerical work indicates that localization can survive in this regime, provided that interactions are sufficiently weak. Stronger interactions can destroy localization, leading to a so-called many-body localization transition. This dynamical phase transition is relevant to questions of thermalization in isolated quantum systems: it separates a many-body localized phase, in which localization prevents transport and thermalization, from a conducting (“ergodic”) phase in which the usual assumptions of quantum statistical mechanics hold. Here, we present evidence that many-body localization also occurs in quasiperiodic systems that lack true disorder.
We study the phase diagram of two-dimensional, interacting bosons in the presence of a correlated disorder in continuous space, by using large-scale quantum Monte Carlo simulations at finite temperature. We show that the superfluid transition is strongly protected against disorder. It remains of the Berezinskii-Kosterlitz-Thouless type up to disorder strengths comparable to the chemical potential. Moreover, we study the transport properties in the strong disorder regime where a zero-temperature Bose-glass phase is expected. We show that the conductance exhibits a thermally activated behavior vanishing only at zero temperature. Our results point towards the existence of a Bose bad-metal phase as a precursor of the Bose-glass phase.
A spin-wave approach of the zero temperature superfluid-insulator transition for two-dimensional hard-core bosons in a random potential μ=±W is developed. While at the classical level there is no intervening phase between the Bose-condensed superfluid (SF) and the gapped disordered insulator, the introduction of quantum fluctuations leads to a much richer physics. Upon increasing the disorder strength W, the Bose-condensed fraction disappears first, before the SF. Then a gapless Bose-glass phase emerges over a finite region until the insulator appears. Furthermore, in the strongly disordered SF regime, a mobility edge in the spin-wave excitation spectrum is found at a finite frequency Ω(c) decreasing with W, and presumably vanishing in the Bose-glass phase.
The phase diagrams and phase transitions of bosons with short-ranged repulsive interactions moving in periodic and/or random external potentials at zero temperature are investigated with emphasis on the superfluid-insulator transition induced by varying a parameter such as the density. Bosons in periodic potentials (e.g., on a lattice) at T=0 exhibit two types of phases: a superfluid phase and Mott insulating phases characterized by integer (or commensurate) boson densities, by the existence of a gap for particle-hole excitations, and by zero compressibility. Generically, the superfluid onset transition in d dimensions from a Mott insulator to superfluidity is ``ideal,'' or mean field in character, but at special multicritical points with particle-hole symmetry it is in the universality class of the (d+1)-dimensional XY model. In the presence of disorder, a third, ``Bose glass'' phase exists. This phase is insulating because of the localization effects of the randomness and analogous to the Fermi glass phase of interacting fermions in a strongly disordered potential.The Bose glass phase is characterized by a finite compressibility, no gap, but an infinite superfluid susceptibility. In the presence of disorder the transition to superfluidity is argued to occur only from the Bose glass phase, and never directly from the Mott insulator. This zero-temperature superfluid-insulator transition is studied via generalizations of the Josephson scaling relation for the superfluid density at the ordinary \ensuremath{\lambda} transition, highlighting the crucial role of quantum fluctuations. The transition is found to have a dynamic critical exponent z exactly equal to d and correlation length and order-parameter correlation exponents \ensuremath{\nu} and \ensuremath{\eta} which satisfy the bounds \ensuremath{\nu}\ensuremath{\ge}2/d and \ensuremath{\eta}\ensuremath{\le}2-d, respectively. It is argued that the superfluid-insulator transition in the presence of disorder may have an upper critical dimension dc which is infinite, but a perturbative renormalization-group calculation wherein the critical exponents have mean-field values for weak disorder above d=4 is also discussed. Many of these conclusions are verified by explicit calculations on a model of one-dimensional bosons in the presence of both random and periodic potentials. The general results are applied to experiments on 4He absorbed in porous media such as Vycor. Some measurable properties of the superfluid onset are predicted exactly [e.g., the exponent x relating the \ensuremath{\lambda} transition temperature to the zero-temperature superfluid density is found to be d/2(d-1)], while stringent bounds are placed on others. Analysis of preliminary data is consistent with these predictions.
I discuss the mean-field theory of superconductivity in a strongly disordered system of fermions with short-range attraction. It is argued that in this limit the effective theory at low energies is equivalent to the disordered Bose–Hubbard model, and I consider both the infinite-range and the "nearest-neighbor" hopping of bosons between the localized states. In the infinite-range case the mean-field theory is exact, and the superconducting gap is uniform in space, while in the latter case, the gap becomes highly non-uniform in space, but, surprisingly, is finite everywhere at T < T MF . I find that the mean-field transition temperature T MF > 0 always, and argue that the superconductor–insulator transition at T = 0 in models with net attraction between fermions is in the universality class of "dirty-bosons".
I argue that the system of interacting bosons at zero temperature and in random external potential possesses a simple critical point that describes the proliferation of disorder-induced defects in the superfluid ground state, and that is located at weak disorder close to and above one dimension. This makes it possible to address the critical behavior at the superfluid-Bose glass transition in dirty boson systems by expanding around the lower critical dimension of d=1. Within the formulated renormalization procedure near d=1, the dynamical critical exponent is obtained exactly and the correlation length critical exponent is calculated as a Laurent series in the parameter $\sqrt{\ensuremath{\epsilon}},$ with $\ensuremath{\epsilon}=d\ensuremath{-}1:$ z=d, $\ensuremath{\nu}=1/\sqrt{3\ensuremath{\epsilon}}+O(\sqrt{\ensuremath{\epsilon}})$ for the short-range, and z=1, $\ensuremath{\nu}=\sqrt{2/3\ensuremath{\epsilon}}+O(\sqrt{\ensuremath{\epsilon}}),$ for the long-range Coulomb interaction between bosons. The identified critical point should be stable against the residual perturbations in the effective action for the superfluid, at least in dimensions 1<d<2, for both short-range and Coulomb interactions. For the superfluid-Mott insulator transition in the system in a periodic potential and at a commensurate density of bosons, I find $\ensuremath{\nu}=(\frac{1}{2}\sqrt{\ensuremath{\epsilon}})+\frac{1}{4}+O(\sqrt{\ensuremath{\epsilon}}),$ which yields a result in reasonable agreement with the known XY critical exponent in d=2. The critical behavior of the superfluid density, phonon velocity, and the compressibility in the system with short-range interactions is discussed.