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arXiv:0907.1028 · Journal of Physics Condensed Matter

Hubbard-Uband-structure methods

Robert C. Albers, N. Egede Christensen, A. Svane

Published Aug 5, 2009• 63 citations
arXivHTMLPDF

Abstract

The last decade has seen a large increase in the number of electronic-structure calculations that involve adding a Hubbard term to the local-density approximation band-structure Hamiltonian. The Hubbard term is then determined either at the mean-field level or with sophisticated many-body techniques such as using dynamical mean-field theory. We review the physics underlying these approaches and discuss their strengths and weaknesses in terms of the larger issues of electronic structure that they involve. In particular, we argue that the common assumptions made to justify such calculations are inconsistent with what the calculations actually do. Although many of these calculations are often treated as essentially first-principles calculations, in fact, we argue that they should be viewed from an entirely different point of view, namely, as based on phenomenological many-body corrections to band-structure theory. Alternatively, it may also be considered that they are just based on a Hubbard model that is more complex than the simple one- or few-band models traditionally used in many-body theories of solids.

DOI
10.1088/0953-8984/21/34/343201

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The last decade has seen a large increase in the number of electronic-structure calculations that involve adding a Hubbard term to the local-density approximation band-structure Hamiltonian. The Hubbard term is then determined either at the mean-field level or with sophisticated many-body techniques such as using dynamical mean-field theory. We review the physics underlying these approaches and discuss their strengths and weaknesses in terms of the larger issues of electronic structure that they involve. In particular, we argue that the common assumptions made to justify such calculations are inconsistent with what the calculations actually do. Although many of these calculations are often treated as essentially first-principles calculations, in fact, we argue that they should be viewed from an entirely different point of view, namely, as based on phenomenological many-body corrections to band-structure theory. Alternatively, it may also be considered that they are just based on a Hubbard model that is more complex than the simple one- or few-band models traditionally used in many-body theories of solids.
We propose a new, alternative method for ab-initio calculations of the electronic structure of solids, which has been specifically adapted to treat many-body effects in a more rigorous way than many existing ab-initio methods. We start from a standard band-structure calculation for an effective one-particle Hamiltonian approximately describing the material of interest. This yields a suitable set of one-particle basis functions, from which well localized Wannier functions can be constructed using a method proposed by Marzari and Vanderbilt. Within this (minimal) basis of localized Wannier functions the matrix elements of the non-interacting (one-particle) Hamiltonian as well as the Coulomb matrix elements can be calculated. The result is a many-body Hamiltonian in second quantization with parameters determined from first principles calculations for the material of interest. The Hamiltonian is in the form of a multi-band Hamiltonian in second quantization (a kind of extended, multi-band Hubbard model) such that all the standard many-body methods can be applied. We explicitly show how this approach can be solved in the simplest many-body approximation, the mean-field Hartree-Fock approximation (HFA), which takes into account exact exchange and corrects for self-interaction effects.
Abstract This article is a short introduction to the modern computational techniques used to tackle the many-body problem in materials. The aim is to present the basic ideas, using simple examples to illustrate strengths and weaknesses of each method. We will start from density-functional theory (DFT) and the Kohn–Sham construction—the standard computational tools for performing electronic structure calculations. Leaving the realm of rigorous density-functional theory, we will discuss the established practice of adopting the Kohn–Sham Hamiltonian as approximate model. After recalling the triumphs of the Kohn–Sham description, we will stress the fundamental reasons of its failure for strongly-correlated compounds, and discuss the strategies adopted to overcome the problem. The article will then focus on the most effective method so far, the DFT+DMFT technique and its extensions. Achievements, open issues and possible future developments will be reviewed. The key differences between dynamical (DFT+DMFT) and static (DFT+ U ) mean-field methods will be elucidated. In the conclusion, we will assess the apparent dichotomy between first-principles and model-based techniques, emphasizing the common ground that in fact they share.
We review the basic ideas of the dynamical mean field theory (DMFT) and some of the insights into the electronic structure of strongly correlated electrons obtained by this method in the context of model Hamiltonians. We then discuss the perspectives for carrying out more realistic DMFT studies of strongly correlated electron systems and we compare it with existent methods, LDA and LDA+U. We stress the existence of new functionals for electronic structure calculations which allow us to treat situations where the single--particle description breaks down such as the vicinity of the Mott transition.
Models of strongly interacting Fermi systems are sufficiently intractable that simple mean-field approximations (typically Hartree-Fock) are often employed to obtain qualitative insight into their properties, and also to set parameter values by comparing with band-structure calculations. However, if the correlations are accounted for with use of more sophisticated (but still mean-field-like) methods, qualitative changes in charge densities and magnetic properties can result. We compare four ``mean-field'' approximations for an extended Hubbard model and show that they yield quite different results. Implications for the choice of model for high-temperature superconductors are discussed.
[[abstract]]The accurate analytical and numerical calculations of the electronic band structure and ground state properties of strongly correlated electrons within the Hubbard model are performed by constructing convergent perturbation theory for general interaction strength and electron concentration. We test the developed perturbation approach about mean field solution in the extreme conditions of one dimensionality for entire parameter space of electron interaction U/t and electron concentration n. The many-body perturbation formalism up two second order about the generalized self-consistent field (GSCF) Hamiltonian goes beyond the range of applicability of standard perturbation theory by incorporating systematically the effect of the random-phase-type perturbation techniques and controlled expansion of the energy functional for general U/t and n. The second order perturbation correction vanishes at small and large U/t limit and performed calculations of the ground state energy show a next to the perfect numerical agreement with the Bethe-ansatz results.
This paper presents a general method to describe and analyze electron correlation effects in local-orbital electronic structure calculations using a generalized Hubbard Hamiltonian. In our approach, we first introduce a local density formalism where the total energy of the system is obtained as a function of the orbital occupancies ni{{n}_{i}}ni​ associated with each local orbital; in particular, exchange and correlation local potentials are presented for a multilevel case. In parallel, using the dynamical mean field approximation, a many-body solution is obtained by means of a local self-energy that appropriately interpolates between the low and high correlation limits. We also show that the local density and the many-body solutions are linked through charge consistency conditions. These two solutions are applied to a multilevel Anderson impurity and to a multiband Hubbard lattice, our results showing the high accuracy of the approach presented in this paper. Further on, we discuss how to apply our previous analysis to the case of crystals and molecules and analyze several examples: bulk Si, and HF and H2O{\mathrm{H}}_{2}\mathrm{O}H2​O molecules. The good results obtained for these cases show that our approach for the description of correlation effects offers an interesting alternative to the well-established density functional methods based on the calculation of the electron density $\ensuremath{\rho}(\stackrel{\ensuremath{\rightarrow}}{r}).$