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arXiv:0808.2828 · Physical Review A

Impact of the Meissner effect on magnetic microtraps for neutral atoms near superconducting thin films

Daniel Cano, Brian L. Kasch, H. Hattermann, D. Koelle, R. Kleiner, Claus Zimmermann, József Fortágh

Published Jun 5, 2008• 20 citations
arXivHTMLPDF

Abstract

We theoretically evaluate changes in the magnetic potential arising from the magnetic field near superconducting thin films. An example of an atom chip based on a three-wire configuration has been simulated in the superconducting and the normal conducting state. Inhomogeneous current densities within the superconducting wires were calculated using an energy-minimization routine based on the London theory. The Meissner effect causes changes to both trap position and oscillation frequencies at short distances from the superconducting surface. Superconducting wires produce much shallower microtraps than normal conducting wires. The results presented in this paper demonstrate the importance of taking the Meissner effect into account when designing and carrying out experiments on magnetically trapped neutral atoms near superconducting surfaces.

DOI
10.1103/physreva.77.063408

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We report on the realization and characterization of a magnetic microtrap for ultracold atoms near a straight superconducting Nb wire with circular cross section. The trapped atoms are used to probe the magnetic field outside the superconducting wire. The Meissner effect shortens the distance between the trap and the wire, reduces the radial magnetic-field gradients, and lowers the trap depth. Measurements of the trap position reveal a complete exclusion of the magnetic field from the superconducting wire for temperatures lower than 6 K. As the temperature is further increased, the magnetic field partially penetrates the superconducting wire; hence the microtrap position is shifted towards the position expected for a normal-conducting wire.
We design magnetic traps for atoms based on the average magnetic field of vortices induced in a type-II superconducting thin film. This magnetic field is the critical ingredient of the demonstrated vortex-based atom traps, which operate without transport current. We use Bean's critical-state method to model the vortex field through mesoscopic supercurrents induced in the thin strip. The resulting inhomogeneous magnetic fields are studied in detail and compared to those generated by multiple normally conducting wires with transport currents. Various vortex patterns can be obtained by programing different loading-field and transport-current sequences. These variable magnetic fields are employed to make versatile trapping potentials.
Magnetic traps for cold atoms have become a powerful tool in cold atom physics and condensed matter research. The traps on superconducting chips allow one to increase the trapped atom lifetime and coherence time by decreasing the thermal noise by several orders of magnitude compared to that of the typical normal-metal conductors. A thin superconducting film in the mixed state is, usually, the main element of such a chip. Using a finite element method to analyze thin film magnetization and transport current in type-II superconductivity, we study magnetic traps recently employed in experiments. The proposed approach allows us to predict important characteristics of the magnetic traps (their depth, shape, distance from the chip surface, etc) that are necessary when designing magnetic traps in cold atom experiments.
Surface based geometries of microfabricated wires or patterned magnetic films can be used to magnetically trap and manipulate ultracold neutral atoms or Bose-Einstein condensates. We investigate the magnetic properties of such atom chips using a scanning magnetoresistive (MR) microscope with high spatial resolution and high field sensitivity. By comparing MR scans of a permanent magnetic atom chip to field profiles obtained using ultracold atoms, we show that MR sensors are ideally suited to observe small variations of the magnetic field caused by imperfections in the wires or magnetic materials which ultimately lead to fragmentation of ultracold atom clouds. Measurements are also provided for the magnetic field produced by a thin current-carrying wire with small geometric modulations along the edge. Comparisons of our measurements with a full numeric calculation of the current flow in the wire and the subsequent magnetic field show excellent agreement. Our results highlight the use of scanning MR microscopy as a convenient and powerful technique for precisely characterizing the magnetic fields produced near the surface of atom chips.
Recently demonstrated superconducting atom chips provide a platform for trapping atoms and coupling them to solid-state quantum systems. Controlling these devices requires a full understanding of the supercurrent distribution in the trapping structures. For type-II superconductors, this distribution is hysteretic in the critical state due to the partial penetration of the magnetic field in the thin superconducting film through pinned vortices. We report here an experimental observation of this memory effect. Our results are in good agreement with the predictions of the Bean model of the critical state without adjustable parameters. The memory effect allows to write and store permanent currents in micron-sized superconducting structures and paves the way toward engineered trapping potentials.
The physics of superconducting films, and especially the role of remanent magnetization has a defining influence on the magnetic fields used to hold and manipulate atoms on superconducting atomchips. We magnetically trap ultracold ^{87} 87 Rb atoms on a 200 m wide and 500 m thick cryogenically cooled niobium Z-wire structure. By measuring the distance of the atomcloud to the trapping wire for different transport currents and bias fields, we probe the trapping characteristics of the niobium superconducting structure. At distances closer than the trapping wire width, we observe a different behaviour than that of normal conducting wire traps. Furthermore, we measure a stable magnetic trap at zero transport current. These observations point to the presence of a remanent magnetization in our niobium film which is induced by a transport current. This current-induced magnetization defines the trap close to the chip surface. Our measurements agree very well with an analytic predic tion based on the critical state model (CSM). Our results provide a new tool to control atom trapping on superconducting atomchips by designing the current distribution through its current history.