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arXiv:0805.0218 · Journal of the Physical Society of Japan

Time-Dependent DMRG Study on Quantum Dot under a Finite Bias Voltage

Shunsuke Kirino, Tatsuya Fujii, Jize Zhao, Kazuo Ueda

Published Jul 25, 2008• 48 citations
arXivHTMLPDF

Abstract

Resonant tunneling through quantum dot under a finite bias voltage at zero temperature is investigated by using the adaptive time-dependent density matrix renormalization group(TdDMRG) method. Quantum dot is modeled by the Anderson Hamiltonian with the 1-D nearest-neighbor tight-binding leads. Initially the ground state wave function is calculated with the usual DMRG method. Then the time evolution of the wave function due to the slowly changing bias voltage between the two leads is calculated by using the TdDMRG technique. Even though the system size is finite, the expectation values of current operator show steady-like behavior for a finite time interval, in which the system is expected to resemble the real nonequilibrium steady state of the infinitely long system. We show that from the time intervals one can obtain quantitatively correct results for differential conductance in a wide range of bias voltage. Finally we observe an anomalous behavior in the expectation value of the double occupation operator at the dot $$ as a function of bias voltage.

DOI
10.1143/jpsj.77.084704

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Resonant tunneling through quantum dot under a finite bias voltage at zero temperature is investigated by using the adaptive time-dependent density matrix renormalization group(TdDMRG) method. Quantum dot is modeled by the Anderson Hamiltonian with the 1-D nearest-neighbor tight-binding leads. Initially the ground state wave function is calculated with the usual DMRG method. Then the time evolution of the wave function due to the slowly changing bias voltage between the two leads is calculated by using the TdDMRG technique. Even though the system size is finite, the expectation values of current operator show steady-like behavior for a finite time interval, in which the system is expected to resemble the real nonequilibrium steady state of the infinitely long system. We show that from the time intervals one can obtain quantitatively correct results for differential conductance in a wide range of bias voltage. Finally we observe an anomalous behavior in the expectation value of the double occupation operator at the dot $$ as a function of bias voltage.
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We apply the adaptive time-dependent density-matrix renormalization-group method (tDMRG) to the study of transport properties of quantum-dot systems connected to metallic leads. Finite-size effects make the usual tDMRG description of the Kondo regime a numerically demanding task. We show that such effects can be attenuated by describing the leads by ``Wilson chains,'' in which the hopping matrix elements decay exponentially away from the impurity $({t}_{n}\ensuremath{\propto}{\ensuremath{\Lambda}}^{\ensuremath{-}n/2})$. For a given system size and in the linear-response regime, results for $\ensuremath{\Lambda}>1$ show several improvements over the undamped $\ensuremath{\Lambda}=1$ case: perfect conductance is obtained deeper in the strongly interacting regime and current plateaus remain well defined for longer time scales. Similar improvements were obtained in the finite-bias regime up to bias voltages of the order of the Kondo temperature. These results show that with the proposed modification, the tDMRG characterization of Kondo correlations in the transport properties can be substantially improved, while it turns out to be sufficient to work with much smaller system sizes. We discuss the numerical cost of this approach with respect to the necessary system sizes and the entanglement growth during the time evolution.
A new method to perform linear and finite bias conductance calculations in one dimensional systems based on the calculation of real time evolution within the Density Matrix Renormalization Group (DMRG) is presented. We consider a system of spinless fermions consisting of an extended interacting nanostructure attached to non-interacting leads. Results for the linear and finite bias conductance through a seven site structure with weak and strong nearest-neighbor interactions are presented. Comparison with exact diagonalization results in the non-interacting limit serve as verification of the accuracy of our approach. Our results show that interaction effects lead to an energy dependent self energy in the differential conductance.
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Scattering states fulfill the correct boundary conditions of a current carrying open quantum system. Discretizing the energy continuum of these states allows for employing Wilson's numerical renormalization group approach without violating the boundary conditions by using a finite size system. We evolve the analytically known steady-state density operator for a non-interacting quantum-system at finite bias to the full interacting problem by the time-dependent numerical renormalization group after switching on the local charging energy. Using a newly developed algorithm for steady-state nonequilibrium Green functions, we can calculate the current I as function of bias voltage V for arbitrary temperature and magnetic field. A comparison with second-order and GW Kadanoff-Baym-Keldysh results shows excellent agreement for weak interaction strength U .